26
VTB Proc ess Photodiodes VTB1112, 1113
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a
lensed, dual lead TO-46 package. Cathode is
common to the case. These diodes have very
high shunt resistance and have good blue
response.
PACKAGE DIMENSIONS inch (mm)
CASE 19 TO-46 LENSED HERMETIC
CHIP ACTIVE AREA: .0025 in
2
(1.60 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 110°C
Ope rati ng Temp eratur e: -40°C t o 110 °C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB1112 VTB1113 UNITS
Min. Typ. Max. Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 30 60 30 60 µA
TC ISC ISC Tem perat ure Coefficient 2850 K .12 .23 .12 .23 %/°C
VOC Open Circuit Voltage H = 100 2850 K 490 490 mV
TC V OC VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 100 20 pA
RSH Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/ °C
CJJunction Capacitance H = 0, V = 0 .31 . 31 nF
SRSensitivity 365 nm .19 .19 A/W
λrange Spectral Applica tion Range 320 1100 320 11 00 nm
λpSpectral Response - Pea k 920 920 nm
VBR Breakdown Voltage 2 40 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±15 ±15 Degrees
NEP Noise Equi v alent Power 3.0 x 10-14 (Typ.) 5.9 x 10-15 (Typ.)
D* Specific Detectivity 4.2 x 10 12 (Typ.) 2.1 x 10 13 (Typ.)
/ W
WHz⁄
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
