Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -35V
▼ Low On-resistance RDS(ON) 7.5mΩ
▼ Fast Switching Characteristic ID-14.5A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3a 50 ℃/W
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Data and specifications subject to change without notice
200805054
Thermal Data Parameter
RoHS-compliant Product
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current3a -12
Pulsed Drain Current1-50
0.02
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3a
1
AP4409GEM
Rating
-35
±20
-14.5
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -35 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-7A - - 7.5 mΩ
VGS=-4V, ID=-7A - - 15 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2 V
gfs Forward Transconductance VDS=-10V, ID=-7A - 13 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±30 uA
QgTotal Gate Charge2ID=-14A - 55 90 nC
Qgs Gate-Source Charge VDS=-30V - 10 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 30 - nC
td(on) Turn-on Delay Time2VDS=-15V - 18 - ns
trRise Time ID=-1A - 10 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 160 - ns
tfFall Time RD=15Ω- 110 - ns
Ciss Input Capacitance VGS=0V - 4100 6600 pF
Coss Output Capacitance VDS=-25V - 860 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 770 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-14A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-14A, VGS=0V, - 43 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 37 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board （a）, t <10sec
2
AP4409GEM
(a) 1 in2 pad of
2 oz copper (b) 125℃/W when
mounted on a 0.003
in2 pad of 2 oz copper
AP4409GEM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
50
01234
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25oC
-10V
-5.0V
-4.5V
-3.0V
VG=- 2.5 V
0
10
20
30
40
50
01234
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=150oC
-10V
-5.0 V
-4.5 V
-3.0 V
VG=- 2.5 V
6
11
16
21
26
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON\) (m
Ω
)
I
D=-7A
TA=25
℃
0.6
1.0
1.4
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-7A
VG=-10V
0.2
0.6
1.0
1.4
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
2
4
6
8
10
12
14
0 0.2 0.4 0.6 0.8 1 1.2
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oCTj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP4409GEM
Q
VG
-4.5V
QGS QGD
QG
Charge
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
20
40
60
012345
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =-5V
0
4
8
12
16
0 30 60 90 120
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= -14A
VDS = -30 V
0.01
0.1
1
10
100
0.01 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25 oC
Single Pulse
1ms
10ms
100ms
1s
DC
100
1000
10000
1 5 9 13 17 21 25 29
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
Package Outline : SO-8
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
C 0.19 0.22 0.25
D 4.80 4.90 5.00
E1 3.80 3.90 4.00
E 5.80 6.15 6.50
L 0.38 0.71 1.27
θ0 4.00 8.00
e
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
ADVANCED POWER ELECTRONICS CORP.
c
DETAIL A
A1
A
4409GEM
YWWSSS
Package Code
Part Numbe
r
DETAIL A Lθ
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
e
B
134
5678
2
D
E1 E
meet Rohs requirement
5
