MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027SS is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C * Class A Operation * PG = 11 dB at 0.5 W/1.0 GHz * OmnigoldTM Metalization System B G E F H #8-32U N C MAXIMUM RATINGS J IC 1.0 A VCB 60 V VCE 35 V M INIM UM DIM inches / m m A 1.000 / 25.4000 B .976 / 24.800 1.000 / 25.4000 C .028 / 0.700 140 W @ TC = 25 C -65 C to +200 C TJ TSTG -65 C to +150 C JC 25 C/W CHARACTERISTICS E .161 / 4.100 F .098 / 2.500 .110 / 2.800 G .200 / 5.100 .208 / 5.300 .196 / 5.000 H .004 / 0.100 .006 / 0.150 I .425 / 10.800 .465 / 11.800 J .200 / 5.100 2.05 / 5.200 ORDER CODE: ASI10621 TC = 25 C NONETEST CONDITIONS SYMBOL .031 / 0.800 .138 / 3.500 D PDISS M AX IM UM inches / m m .976 / 24.800 BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VCE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PG VCE = 20 V POUT = 0.5 W RBE = 10 IC = 1.0 A MINIMUM TYPICAL MAXIMUM 35 V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 100 mA f = 1.0 GHz UNITS 11 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 100 --- 3.5 pF dB REV. B 1/1