1
Edition 1.4
August 2004
FLM1011-3F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
25.0
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100Ω.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS - 1400 2100
-0.5 -1.5 -3.0
34.0 35.0 -
6.5 7.5 -
VDS = 5V, IDS = 70mA
VDS = 5V, IDS = 900mA
VDS = 5V, VGS = 0V
IGS = -70µA
VDS = 10V,
IDS = 0.6 IDSS(Typ.),
f = 10.7 ~ 11.7 GHz,
ZS = ZL = 50Ω
mA
V
- 1300 -mS
-5.0 - - V
dB
dBm
gm
Vp
VGSO
P1dB
G1dB
Drain Current - 900 1100 mAIdsr
Power-Added Efficiency -29- %
ηadd
Gain Flatness --±0.6 dB
∆G
Thermal Resistance Channel to Case - 5.0 6.0 °C/W
CASE STYLE: IA
Rth
3rd Order Intermodulation
Distortion
f = 11.7GHz, ∆f = 10MHz
2-Tone Test
Pout = 24.0dBm S.C.L.
-44 -46 - dBc
IM3
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
10V x Idsr x Rth
Channel Temperature Rise --66 °C
∆Tch
DESCRIPTION
The FLM1011-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
• High Output Power: P1dB = 35.0dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: ηadd = 29% (Typ.)
• Low IM3= -46dBc@Po = 24.0dBm
• Broad Band: 10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
2
FLM1011-3F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
500 100 150 200
Case Temperature (°C)
24
30
18
12
6
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
161412 18 20 22
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
23
25
27
29
31
21
-55
-45
-25
-15
-35
Output Power (S.C.L.) (dBm)
IM3
IM3 (dBc)
VDS=10V
f1 = 11.7 GHz
f2 = 11.71 GHz
2-tone test
19
Pout
OUTPUT POWER vs. FREQUENCY
Pin=28dBm
26dBm
24dBm
22dBm
10.7 10.95 11.2 11.45 11.7
Frequency (GHz)
30
31
32
33
34
35
36
37
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 11.2 GHz
19 21 23 25 27 29
Input Power (dBm)
28
30
32
34
36
26
20
10
30
40
Output Power (dBm)
ηadd
Pout
ηadd (%)
3
FLM1011-3F
X, Ku-Band Internally Matched FET
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180°
+90°
0°
-90°
S21
S12
SCALE FOR |S21|
SCALE FOR |S12|
0.2
0.1
250
50Ω
10 20 1 2 34
11.7
11.7
11.9
11.9
11.3
11.3
10.5 GHz
10.5 GHz
10.7
10.7
10.9
10.9
11.1
11.1
11.5
11.5
11.7
11.7
11.9
11.9 11.3
11.3
10.5 GHz
10.5 GHz
10.7
10.7
10.9
10.9
11.1
11.1
11.5
11.5
S-PARAMETERS
VDS = 10V, IDS = 900mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
10500 .606 127.5 2.381 -45.7 .045 -34.6 .500 -144.6
10600 .586 118.0 2.475 -54.3 .047 -47.4 .491 -154.2
10700 .556 107.5 2.574 -63.8 .050 -64.6 .474 -165.0
10800 .532 96.4 2.663 -73.4 .053 -76.4 .466 -175.9
10900 .493 84.3 2.767 -83.3 .058 -98.2 .452 172.4
11000 .457 71.3 2.859 -94.1 .064 -110.4 .442 159.8
11100 .413 55.9 2.929 -105.0 .070 -126.2 .430 146.9
11200 .375 38.7 2.984 -116.4 .075 -137.1 .424 133.6
11300 .333 19.7 2.995 -127.8 .081 -151.9 .411 120.4
11400 .301 -3.4 2.992 -139.6 .086 -164.5 .394 106.6
11500 .291 -28.4 2.935 -151.4 .089 -177.0 .375 92.5
11600 .297 -51.8 2.861 -162.7 .093 171.1 .361 79.1
11700 .320 -74.6 2.776 -173.8 .096 157.2 .341 65.6
11800 .354 -93.8 2.681 175.3 .097 147.3 .320 50.6
11900 .399 -109.4 2.565 164.8 .099 134.2 .305 37.7
4
FLM1011-3F
X, Ku-Band Internally Matched FET
2-R 1.25±0.15
(0.049)
0.5
(0.020)
8.1
(0.319)
13.0±0.15
(0.512)
16.5±0.15
(0.650)
3.2 Max.
(0.126)
1.8±0.15
(0.071)
0.1
(0.004)
9.7±0.15
(0.382)
1.5 Min.
(0.059)
1.5 Min.
(0.059)
1.15
(0.045)
0.2 Max.
(0.008)
Case Style "IA"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
4. Source (Flange)
1
2
3
4
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
