ES1A - ES1D Features 0.181 (4.597) 0.157 (3.988) * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. 0.062 (1.575) 0.055 (1.397) 2 SMA/DO-214AC 0.096 (2.438) 0.078 (1.981) COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol 0.114 (2.896) 0.098 (2.489) 0.208 (5.283) 0.188 (4.775) 0.060 (1.524) 0.030 (0.762) 1.0 Ampere Superfast Rectifiers IO 1 0.008 (0.203) 0.004 (0.102) 0.012 (0.305) 0.006 (0.152) TA = 25C unless otherwise noted Parameter Value Units 1.0 A 30 A 1.47 11.76 85 W mW/C C/W RJA Average Rectified Current @ TA = 120C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient** RJL Thermal Resistance, Junction to Lead** 35 C/W Tstg Storage Temperature Range -50 to +150 C TJ Operating Junction Temperature -50 to +150 C if(surge) PD *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics TA = 25C unless otherwise noted Parameter Device Units 1A 1B 1C 1D Peak Repetitive Reverse Voltage 50 100 150 200 Maximum RMS Voltage 35 70 105 140 V DC Reverse Voltage 50 100 150 200 V (Rated VR) Maximum Reverse Current @ rated VR TA = 25C TA = 100C Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Maximum Forward Voltage @ 1.0 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 1999 Fairchild Semiconductor Corporation 5.0 100 15 V A A nS 0.92 V 7.0 pF ES1A-ES1D, Rev. A ES1A - ES1D Discrete POWER & Signal Technologies ES1A - ES1D Typical Characteristics Forward Characteristics Forward Current Derating Curve 10 FORWARD CURRENT (A) FORWARD CURRENT (A) 1.5 1.25 1 0.75 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 0.5 0.25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( C) 1 0.1 0.01 TA = 25 C Pulse Width = 300s 2% Duty Cycle 0.001 0.4 175 1.4 1000 REVERSE CURRENT ( A) PEAK FORWARD SURGE CURRENT (A) 0.8 1 1.2 FORWARD VOLTAGE (V) Reverse Characteristics Non-Repetitive Surge Current 30 25 20 15 10 5 0 0.6 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 100 T A = 125 C 10 TA = 75 C 1 T A = 25 C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Junction Capacitance 14 CAPACITANCE (pF) 12 10 8 6 4 2 0 0.1 50 NONINDUCTIVE 1 10 REVERSE VOLTAGE (V) 50 NONINDUCTIVE 100 +0.5A trr (-) DUT 50V (approx) 50 NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram ES1A-ES1D, Rev. 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