R6008FNX Nch 600V 8A Power MOSFET Datasheet lOutline 600V RDS(on) (Max.) 0.95W ID 8A PD 50W TO-220FM or VDSS (1)(2)(3) lFeatures lInner circuit e N co ew m m D es en ig de ns d f 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Type Switching Power Supply Bulk Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) Taping code Marking 500 R6008FNX lAbsolute maximum ratings(Ta = 25C) Parameter Symbol Value Unit VDSS 600 V Tc = 25C ID *1 8 A Tc = 100C ID *1 3.9 A 32 A R Drain - Source voltage N ot Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 4.3 mJ Avalanche energy, repetitive EAR *4 3.4 mJ Avalanche current IAR *3 4 A Power dissipation (Tc = 25C) PD 50 W Junction temperature Tj 150 C Tstg -55 to +150 C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.10 - Rev.B Data Sheet R6008FNX lAbsolute maximum ratings Symbol Drain - Source voltage slope dv/dt Conditions VDS = 480V, ID = 8A Tj = 125C lThermal resistance Symbol Unit 50 V/ns Values Min. Typ. Max. e N co ew m m D es en ig de ns d f Parameter Values or Parameter Unit Thermal resistance, junction - case RthJC - - 2.5 C/W Thermal resistance, junction - ambient RthJA - - 70 C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 C lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Values Typ. Max. 600 - - V - 700 - V Tj = 25C - 1 100 Tj = 125C - - 10 mA IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2 - 4 V - 0.73 0.95 W Tj = 125C - 1.62 - f = 1MHz, open drain - 8.0 - Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 8A VDS = 600V, VGS = 0V N ot R Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate input resistance www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. Unit Min. IDSS mA VGS = 10V, ID = 4A RDS(on) *6 Tj = 25C RG 2/13 W 2012.10 - Rev.B Data Sheet R6008FNX lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Values Min. Typ. Max. 2.5 5 - gfs *6 VDS = 10V, ID = 4A Input capacitance Ciss VGS = 0V - 580 - Output capacitance Coss VDS = 25V - 450 - Reverse transfer capacitance Crss f = 1MHz - 25 - e N co ew m m D es en ig de ns d f Effective output capacitance, energy related Effective output capacitance, time related Turn - on delay time Rise time Co(tr) VGS = 0V VDS = 0V to 480V - 31.5 31.8 - VDD 300V, VGS = 10V - 20 - ID = 4A - 25 - td(off) *6 RL = 75W - 60 120 tf *6 RG = 10W - 30 60 td(on) *6 pF - - tr *6 Turn - off delay time Fall time Co(er) S or Transconductance Unit pF ns lGate Charge characteristics(Ta = 25C) Parameter Symbol Values Conditions Min. Typ. Max. Qg *6 VDD 300V - 20 - Gate - Source charge Qgs *6 ID = 8A - 5 - Gate - Drain charge Qgd *6 VGS = 10V - 10 - Gate plateau voltage V(plateau) VDD 300V, ID = 8A - 5.7 - N ot R Total gate charge Unit nC V *1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 L 500mH, VDD = 50V, RG = 25W, starting Tj = 25C *4 L 500mH, VDD = 50V, RG = 25W, starting Tj = 25C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 3/13 2012.10 - Rev.B Data Sheet R6008FNX lBody diode electrical characteristics (Source-Drain)(Ta = 25C) Parameter Symbol Inverse diode continuous, forward current Values Conditions IS *1 Min. Typ. Max. - - 8 Unit A ISM *2 Forward voltage VSD *6 VGS = 0V, IS = 8A - 32 A - 1.5 V 47 67 87 ns - 0.17 - mC - 4.9 - A - 610 - A/ms - e N co ew m m D es en ig de ns d f Inverse diode direct current, pulsed or Tc = 25C trr *6 Reverse recovery time Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 8A di/dt = 100A/us Tj = 25C lTypical Transient Thermal Characteristics Symbol Rth1 Rth2 Unit 0.263 0.977 K/W 2.18 Symbol Value Cth1 0.00166 Cth2 0.0191 Cth3 0.046 Unit Ws/K N ot R Rth3 Value www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 4/13 2012.10 - Rev.B Data Sheet R6008FNX lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 10 Drain Current : ID [A] 80 60 40 20 0 0 Operation in this area is limited by RDS(ON) e N co ew m m D es en ig de ns d f Power Dissipation : PD/PD max. [%] 100 or 100 120 50 100 150 PW = 1ms 0.1 Ta = 25C Single Pulse 0.01 200 PW = 100us 1 0.1 1 PW = 10ms 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [C] 1000 100 R 10 Ta = 25C Single Pulse Rth(ch-a)(t) = (t)xRth(ch-a) Rth(ch-a) = 70C/W 1 0.1 N ot Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 0.01 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/13 2012.10 - Rev.B Data Sheet R6008FNX lElectrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 6 5000 Avalanche Power Losses : PAR [W] 4 3 2 1 0 0.01 Ta = 25C 4000 3500 3000 e N co ew m m D es en ig de ns d f Avalanche Current : IAR [A] 4500 or Ta = 25C VDD = 50V , RG = 25W VGF = 10V , VGR = 0V 5 0.1 1 10 100 Coil Inductance : L [mH] 2500 2000 1500 1000 500 0 1.0E+04 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature 100 R 80 60 N ot Avalanche Energy : EAS / EAS max. [%] 120 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [C] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 6/13 2012.10 - Rev.B Data Sheet R6008FNX lElectrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) 8 8 6.0V 6 5.5V 5.0V 3 2 VGS= 4.5V 1 0 0 10V 8.0V 7.0V 6.5V 6.0V 6 5 4 Ta= 25C Pulsed 7 5 e N co ew m m D es en ig de ns d f Drain Current : ID [A] Ta= 25C Pulsed Drain Current : ID [A] 7 or 10V 10 20 30 40 4 3 5.0V 2 VGS= 4.5V 1 0 50 0 2 VGS = 4.5V Ta = 150C Pulsed 1 0 0 10 Drain Current : ID [A] 5.0V R 3 5 4 N ot Drain Current : ID [A] 4 4 Ta = 150C Pulsed 6.0V 5 3 5 5.5V 10V 6 2 Fig.10 Tj = 150C Typical Output Characteristics(II) Fig.9 Tj = 150C Typical Output Characteristics(I) 7 1 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] 8 5.5V 20 30 40 VGS = 4.5V 1 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5.0V 6.0V 2 0 50 10V 3 7/13 2012.10 - Rev.B Data Sheet R6008FNX Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 900 10 Drain Current : ID [A] 800 750 700 650 600 550 500 -50 0 50 100 Junction Temperature : Tj [C] 0.1 0.01 0.001 150 5 2 VDS = 10V ID = 1mA 4.5 6.0 VDS = 10V Pulsed 1 0 -50 3.0 100 N ot 3 1.5 Fig.14 Transconductance vs. Drain Current R 4 0.0 Gate - Source Voltage : VGS [V] Transconductance : gfs [S] 6 Ta = 125C Ta = 75C Ta = 25C Ta = -25C 1 Fig.13 Gate Threshold Voltage vs. Junction Temperature Gate Threshold Voltage : VGS(th) [V] VDS = 10V Pulsed 850 or 100 e N co ew m m D es en ig de ns d f Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 0 50 100 1 Ta = -25C Ta = 25C Ta = 75C Ta = 125C 0.1 0.01 0.01 150 Junction Temperature : Tj [C] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 100 Drain Current : ID [A] 8/13 2012.10 - Rev.B Data Sheet R6008FNX lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature ID= 8.0A 1 ID= 4.0A 0.5 0 0 Static Drain - Source On-State Resistance : RDS(on) [W] 1.5 2.5 VGS= 10V Pulsed 2 e N co ew m m D es en ig de ns d f Static Drain - Source On-State Resistance : RDS(on) [W] Ta = 25C Pulsed or 3 2 5 10 15 Gate - Source Voltage : VGS [V] ID= 8.0A 1.5 1 ID= 4.0A 0.5 0 -50 0 50 100 150 Junction Temperature : Tj [C] 10 R VGS = 10V Pulsed 1 N ot Static Drain - Source On-State Resistance : RDS(on) [W] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 0.1 0.1 Ta = 125C Ta = 75C Ta = 25C Ta = -25C 1 10 Drain Current : ID [A] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 9/13 2012.10 - Rev.B Data Sheet R6008FNX lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 10000 6 10 Coss Ta = 25C f = 1MHz VGS = 0V 0.01 4 e N co ew m m D es en ig de ns d f Capacitance : C [pF] Crss 100 or Ciss 1000 1 Coss Stored Energy : EOSS [uJ] Ta = 25C 0.1 1 10 100 2 0 1000 0 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics R Gate - Source Voltage : VGS [V] Ta = 25C VDD = 300V VGS = 10V RG = 10W Pulsed tf 100 td(off) N ot Switching Time : t [ns] 600 15 1000 10 1 400 Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics 10000 200 0.1 td(on) tr 1 10 Ta = 25C VDD = 300V ID = 8.0A RG = 10W Pulsed 5 0 100 0 10 20 30 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 10 10/13 2012.10 - Rev.B Data Sheet R6008FNX Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 100 1000 10 1 Ta = 125C Ta = 75C Ta = 25C Ta = -25C 0.1 0.01 0 Ta = 25C di / dt = 100A / ms VGS = 0V Pulsed or Reverse Recovery Time : trr [ns] VGS = 0V Pulsed e N co ew m m D es en ig de ns d f Inverse Diode Forward Current : IS [A] lElectrical characteristic curves 0.5 1 1.5 100 10 2 1 10 100 Inverse Diode Forward Current : IS [A] N ot R Source - Drain Voltage : VSD [V] 0.1 www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 11/13 2012.10 - Rev.B Data Sheet R6008FNX lMeasurement circuits Fig.1-2 Switching Waveforms e N co ew m m D es en ig de ns d f or Fig.1-1 Switching Time Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform N ot R Fig.2-1 Gate Charge Measurement Circuit Fig.5-1 di/dt Measurement Circuit www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. Fig.5-2 di/dt Waveform 12/13 2012.10 - Rev.B Data Sheet R6008FNX lDimensions (Unit : mm) D TO-220FM E A E1 A1 A A2 e N co ew m m D es en ig de ns d f A4 or F p b1 L Q c e b DIM N ot R A A1 A2 A4 b b1 c D E e E1 F L p Q x x A MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381 INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189 0.10 0.106 0.11 0.453 0.118 0.083 - 0.118 0.126 0.492 0.134 0.122 0.015 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 13/13 2012.10 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. or The content specified herein is subject to change for improvement without notice. e N co ew m m D es en ig de ns d f The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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