MA44700 Series Dualmode Multiplier Varactors se lll co Description A Dualmode diode is specified in a combined variable reactance and time domain mode. The Dualmode varac- tor is specified for both time and frequency domain usage. Normally, lifetime, snap time and capacitance are specified, and most Dualmode diodes will also have their Q or cut off frequency specified. The capacitance punch through voltage can affect impedance and may be specified also. Breakdown voltage is normally specified. It affects the power capability. The Duaimode diode produces harmonics by two phenomena. It exhibits an abrupt change in capacitance versus bias voltage, as in a classical variable capacitance varactor, and it also exhibits a change in charge storage versus input drive level similar to a Step Recovery diode (SRD). The RF voltage where this transition from charge storage to variable reactance characteristic occurs is ap- proximately the capacitance punch through voltage (the voltage at which the space charge extends across the varactors active region). At this voltage, no more capacitance change will occur with additional reverse voltage. The effect of combining the stored charge and variable reactance change is to make the effective non- Features @ HIGHER EFFICIENCY IN HIGH POWER MULTIPLIER @ BETTER BANDWIDTH THAN STEP RECOVERY DIODES IN LOW ORDER MULTIPLIERS linearity larger than in either a SRD or variable Capacitance diode. In general, a properly designed Dualmode varactor will produce more power and be more efficient in a high power/low order multiplier than either a SRD or varac- tor. These diodes are a very good choice for doublers and triplers with output frequency to 12 GHz where max- imum power, efficiency and bandwidth are the major criteria. They have also been used in doublers with output frequencies as high as 20 GHz. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 * TELEX 94-9464 8-19MA44700 Series Dualmode Multiplier Varactors Specifications @ Ta = 25C Minimum? Min./Max.3 Minimum Maximum Maximum Breakdown Junction Cutoff Transition Thermal Model! Case Voltage Capacitance Frequency Time Ts Resistance Number Style Vb (Volts) Cj (pF) (GHz) 10V/10 mA (ps) (c/w) MA44700 56 200 18.0-26.0 * 10000 5 MA44710 56 175 18.0-26.0 * 8000 5 MA44720 56 150 10.0-20.0 40.0 5000 6 MA44701 56 120 8.0-10.0 60.0 3000 7 MA44711 56 100 8.0-10.0 60.0 2000 7 MA44712 56 100 4.0-5.0 90.0 2000 11 MA44702 30 80 4.0-5.0 90.0 3000 10 MA44722 30 80 4.0-6.0 110.0 1500 10 MA44703 30 80 2.5-3.5 120.0 1000 13 MA44704 30 80 1.5-2.5 150.0 750 15 MA44714 30 60 1.5-2.5 150.0 400 15 MA44725 30 40 1.0-1.5 160.0 150 25 MA44705 30 40 0.5-0.7 175.0 150 50 MA44706 30 30 0.3-0.5 200.0 100 75 MA44707 30 30 0.15-0.20 350.0 _ 300 * Fe not specified. Rg is measured at 6 volts and .5 GHz = 0.35 ohms maximum. NOMINAL CHARACTERISTICS Suggested Minority Carrier Available X36 Output Model! Lifetime, TL Output Power Efficiency Frequency Range Number 10 mA/6 mA (ns) Range (Watts) (%) (GHz) MA44700 450 3.0-20.0 55 0.3-0.75 MA44710 400 2.0-24.0 55 0.5-1.00 MA44720 350 2.0-16.0 55 0.6-1.20 MA44701 210 1.0-10.0 55 0.7-1.50 MA44711 180 1.0-10.0 55 1.0-2.50 MA44712 170 1.0-6.0 55 2.0-4.00 MA44702 200 1.0-8.0 55 1.5-3.00 MA44722 180 2.0-10.0 55 1.0-3.00 MA44703 100 0.5-4.0 50 3.0-5.00 MA44704 60 0.5-2.5 45 5.0-7.00 MA44714 60 0.3-1.5 45 5.0-8.00 MA44725 20 3.0-1.5 50 5.0-8.00 MA44705 18 0.1-0.6 40 8.0-12.00 MA44706 10 0.2-0.5 30 12.0-15.00 MA44707 _ 0.1-0.2 15 15.0-25.00 NOTES MAXIMUM RATINGS 1. Standard case styles are listed for each model number. For other case styles available, consult the factory. 2. Breakdown voltage is measured at a reverse bias current of 10 yA. 3. Capacitance is measured at 1 MHz and 6 volts. The nominal tolerance is + 10%, but closer tolerances are available upon request at a nominal charge. Nominal case capacitances are given with the case style outline drawings. 4. Ag is measured at .5 GHz. Cutoff frequency is calculated at 1 GHz by this Rg and capacitance measurement at 1 MHz. 5. This is an operable output frequency range and does not imply instan- taneous bandwidth. 6. These are nominal vaiues for narrow band circuits within the suggested frequency range and are to be used as guidelines in circuit designs. These values can vary substantially depending on the multiplier circuit design. These diodes are specifically designed for multiplication orders of X2-X4. 7. These are nominal values at midpoint of the specified frequency range in a doubler. Dualmode diodes can operate at full efficiency over a broad range of power. NOTE: Dualmode Multipliers were formerly called Bimode Varactors Reverse Voltage Same as Rated Breakdown (Vp) Operating Temperature 65C to + 150C Storage Temperature - 65C to + 150C ENVIRONMENTAL PERFORMANCE All varactors in the MA44700 series are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MIL-STD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464MA44700 Series Dualmode Multiplier Varactors Super Dualmode Diodes (For higher output power) SPECIFICATIONS @ Th = 25C Minimum2 Min./Max.3 Minimum4 Maximum Maximum Breakdown Junction Cutoff Transition Thermal Model! Case Voltage Capacitance Frequency Time Ts Resistance Number Style Vb (Volts) Cj (pF) (GHz) - 10V/10 mA (ps) (C/W) MA44710A 56 140 18.0-26.0 * 5000 5 MA44711A 56 80 8.0-10.0 60 2000 9 MA44712A 56 80 4.0-5.0 90 2000 12 MA44713A 56 60 2.5-3.5 140 700 15 MA44714A 30 60 1.5-2.5 140 500 17 MA44724A 30 45 1.0-1.5 160 300 27 * Fe is not specified. Rg is measured at - 6 volts and .56 GHz Rg = .35 ohms maximum. NOMINAL CHARACTERISTICS Suggested5 Minority Carrier Available X36 Output Mode!' Lifetime TL Output Power Efficiency Frequency Range Number 10 mA/6 mA (ns) Range (Watts) (%) (GHz) MA44710A 450 40.0 65 0.5-1.0 MA44711A 160 24.0 65 1.0-2.5 MA44712A 130 10.0 55 2.0-4.0 MA47713A 60 6.0 50 3.0-5.0 MA47714A 60 4.0 50 5.0-8.0 MA44724A 45 2.5 50 7.0-40.0 See notes on previous page. Varactor Selection Guide TABLE |. Summary of SRD and Dualmode Varactor Selection The following table gives information for selecting an appropriate Dualmode varactor depending on the output frequencies and the power desired. Determine: 1) Capacitance from output reactance at the output frequency X_ = 30-60 ohms for all but high power multipliers then, x, = 10-30 ohms . 1 2) Snap Time = 7. max. 3) Breakdown Voltage Varn =k /2P, fin) Ct-6 4) Lifetime = 10 (min) 20-30 preferred in in 5) Thermal Resistance Oe > 150 Ta Pin Pout . : 5 TL 10 TL 6) Bias Resistor = R, = (SRD Varactor) Rp = (Dual Mode Varactor) N? Cri N? Cr 7) Case style from the package inductance required. This is determined by output frequency, bandwidth and power dissipation. k 0.8 for 3X or less k 1.1 for 4X uk M/A-COM SEMICONDUCTOR PRODUCTS OPERATION * Burlington, MA 01803 * (617) 272-3000 TWX 710-332-6789 * TELEX 94-9464 8-21MA44700 Series Dualmode Muitiplier Varactors Multiplier Diode Selection by Type of Multiplier The following chart suggests the type of multiplier diodes that are used in several multiplier circuits. Suggested Type of Multiplier Diode Type of Multiplier SRD Dualmode Varactor High Order Multiplier (4X-10X) X Comb Generator (>10X) x High Power/Low Order (2X-3X) Xx Puised High Power Multiplier (2-3X) X (Stacked) Millimeter Multiplier (2-3X) x Instantaneous Bandwidth (2-3X) 5-10% 10% 5% Varactor Upconverter x x Dualmode Multiplier Circuits ODualmode multiplier circuits are similar to SRD multiplier multipliers will allow broader bandwidth than similar SRD circuits, except that they require an idler circuit at unwanted multipliers. This better bandwidth characteristic is the result harmonics to return them to ground. of easier broadband matching to the input signal. There is less change between the low impedance and high im- Harmonics are generated by both the diodes voitage pedance states of Dualmode diode than a SRD. variable reactance and the charge storage (snap mechanism). In general, these circuits are most useful for The following is a typical Dualmode multipiier circuit. Its low order high power multiplication. Normally, Dualmode normal operating conditions are indicated. L, L, BIAS POINT Cc, c I INPUT c, p C, OUTPUT >e, - Ry Btls = : + =v | C4 I : 4 L 1 M/A-COM SEMICONDUCTOR PRODUCTS OPERATION * Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 TELEX 94-9464 8-22MA44700 Series Dualmode Multiplier Varactors Typical Performance Curves 4 100 z SINGLE a JUNCTION STACK PACK DICDES 2 200F DIODES 9 50 POWER = 10 WATTS z (N= LY) $ 40 _de | 100 20 WER =5 WA 80 (N = 2X ONLY) MINIMUM VALUE 60 e POWER = 1 WATT = oO 50 (N = 2-3X) _ POWER = 100 mW (N = 5- ) 40 30 POWER = 500 mW 20 (N = 2X-4X ONLY) APPROXIMATE MINIMUM BREAKDOWN VOLTAGE OF VARACTOR (VOLTS) POWER =100 (N = 2-4X ONLY} = 10 MINIMUM MINORITY CARRIER LIFETIME (Tv) a 5 1.0 5 10 1.0 10 INPUT FREQUENCY (GHz) MULTIPLIER OUTPUT FREQUENCY IN GHz FIGURE 1. Minimum and Suggested Values of Miniority FIGURE 2. Approximate Minimum Breakdown Voltage Carrier Lifetime (T_) for SRD and Dualmode Required for SRD and Dualmode Varactors Varactors vs. Multiplier Input Frequency in at Various Output Power vs. Output GHz Frequency 100ns 100 10ns 10 s MAXIMUM VALUE T. Ins 100ps MAXIMUM SNAP TIME (T_) - NANOSECONDS VALUE OF JUNCTION CAPACITANCE AT 6 VOLTS (pF) 0.1 10ps 0.1 1.0 10 20 01 0.1 1.0 10 20 OUTPUT FREQUENCY (GHz) OUTPUT FREQUENCY (GHz) FIGURE 3. Suggested Junction Capacitance for SRD and FIGURE 4. Maximum and Suggested Values of Snaptime Dualmode Varactors vs. Multiplier Output (Tg) for SRD and Dualmode Varactors vs. Frequency in GHz Multiplier Output Frequency in GHz M/A-COM SEMICONDUCTOR PRODUCTS OPERATION * Burlington, MA 01803 * (617) 272-3000 * TWX 710-332-6789 * TELEX 94-9464 8-23MA44700 Series Dualmode Multiplier Varactors Typical Performance Curves (Contd) The following curves give a theoretical efficiency of silicon multipliers in simple doubles and triplers and include input and output circuit losses. These values are limit values. 80 zo OF ae : eee 80 Zo | TT TTT TTT T TTT TTT Fin Qnouir x2 | CiReuiT 70 Fin INPUT x3 Pr OUTPUT U 70| i, =oaae [_|MUCTIPLIER) | |, 20g ap 4 70/ r,08 48 MULTIPLIER! | 08 dB 708 | tote cH ot tata 60 EFF = 84) (Fout/Fc) ; LE sos 60 EFF = eta) (Four/Fc) | | | 24 SRD II Fa A) GO _ (=4.71) _~ A x 50 7 ETOR = ATT = VARAC SRD 3 Y K | (e995) & (a= 8.38): Lo // VARACTOR 2 a0 / Pitt 2 40 of 133 wi NN wi ~en o / Y DUAL MODE 3 A {a = 11.60) : AY Z| : | Fi 30 ia ti 30 / , Y WA DUAL Move 1--2~3 20 20 y) (2 = 9.52) Vi Yi 10 10 a 0 0 Lt 1 10 100 1 10 100 FolFout Fo/Four FIGURE 5. Theoretical Efficiency of X2 Silicon Diode FIGURE 6. Theoretical Efficiency of Higher Order Diode Multipliers Multipliers Typical Terminally Guided Missile Telemetry Link Example of Dualmode Application CONTROL SCHOTTKY DIODES LooP MIXER MNODES SCHOTTKY DIODES Di POWER SOLATOR ISOLATOR CRYST AL PHASE " FILTER FILTER AMP FILTER MULTIPLIER ue _- _ LOCKED LOCKED X (NI = >=. SOURCE SOURCE CONVERTER fer TO MISSILE AMPLIFIER TRANSISTOR OR TUNING VARACTORS COMMANO FROM TARGET ACQUISITION RADAR> CONTROL FROM MISSILE RAODAR4 COMPUTER MISSILE CONTROL INFORMATION AMPLIFIER BIPOLAR TRANSISTORS M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 * TELEX 94-9464 8-24MA44700 Series Dualmode Multiplier Varactors Case Styles @ DENOTES CATHODE NOT TO SCALE 30 < A DIA. INCHES MILLIMETERS eH DIM. MIN. | MAX. MIN. | MAX. DIA. A 0.119 0.127 3,02 3,22 ho oA B 0.060 0.064 1,52 1,63 e Y C 0.205 0.225 5,21 5,72 i - D 0.085 0.097 2,16 2.46 i C E 0.060 0.064 1,52 1,63 | + F 0.060 0.064 1,52 1,63 G G 0.016 0.024 0,41 0,61 4 H 0.079 | 0.083 2,01 | 2,11 _ Vv Cp = 0.18 pF Typical B Lg = 0.40 nH Typical *! bia. [(*_ 56 +| Le INCHES MILLIMETERS DIA. DIM. MIN. | MAX. MIN. | MAX. HtG DIA. A 0.766 0.792 19,46 20,12 TE 17Ve K pants B = 0.240 _ 6,10 | H C 0.130 REF. 3,30 REF. Y tj D 0.145 0.155 3,68 3,04 c { E 0.180 0.190 457 4,83 T = F 0.092 0.094 2,34 2,39 a | | L G 0.155 0.165 3,94 4,19 D th t H 0.180 0.190 4,57 4,83 i J 0.185 0.195 4,70 4,95 t I K 0.030 0.046 0,76 1,17 Y i BASE ADAPTER L 0.095 0.105 2,41 2,67 Mi 0.030 _ 0,76 _ Base adaptor optional. f Cp = 0.35 pF Typical BDIA, JDIA. Lg = 3.0 nH Typical Ordering Information Orders for products from M/A-COM Semiconductor Products, Inc. should be placed with our local sales office. Should there be a need for factory sales or applications engineering assistance, contact M/A-COM directly. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION * Burlington, MA 01803 * (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 8-25