Philips Semiconductors Military Bipolar Memory Products a 2K-bit TTL bipolar PROM (512 x 4) FEATURES Address access time: 60ns max (Input loading: -150A max On-chip address decoding One chip enable input Output options: ~ 828130: Open collector 828131: 3-State No separate fusing pins Unprogrammed outputs are Low level Fully TTL compatible APPLICATIONS Prototyping/volume production @ Sequential controllers Microprogramming Hardwired algorithms Control store @ Random logic Code conversion ABSOLUTE MAXIMUM RATINGS Product specification 82S130 82S$131 DESCRIPTION The 828130 and the 82S131 are field-programmable, which means that custom patterns are immediately available by following the Philips Generic | fusing procedure. The standard 828130 and 8258131 are supplied with all outputs at a logical Low. Outputs are programmed to a logic High level at any specified address by fusing the Ni-Cr link matrix. These devices include on-chip decoding and 1 chip enable input for ease of memory expansion. They feature either Open collector or 3-State outputs for optimization of word expansion in bused organizations. ORDERING INFORMATION PACKAGE DESCRIPTION ORDER CODE | peciGnaToR* 16-pin Ceramic DIP 828130/BEA, . (300mil-wide) 825131 /BEA GDIP-T16 - . 82S8130/BFA, 16-pin Ceramic Flat Pack B2S131/BFA GDFP2-F16 *MIL-STD 1835 or Appendix A of 1995 Military Data Handbook SYMBOL PARAMETER RATING UNIT Veco Supply voltage +7 Voc V| Input voltage +6.5 Voc Vo Output voltage High (828130) +5.5 Voc Vo Output voltage Off-State (828131) +55 Voc Ta Operating temperature range -55 to +125 c Tste Storage temperature range -65 to +150 C PIN CONFIGURATION BLOCK DIAGRAM Aq on an ADDRESS | 1:32 | LINES | DECODER] | 32 x 64 Ag o-__,. am Ag Aq 1:16 1:16 4:16 1:16 Ag Ot MUX MUX MUX MUX 4 OUTPUT DRIVERS 0; Q2 03 4 OUTPUT LINES November 10, 1987 1065 853-0256 FO0355 Philips Semiconductors Military Bipolar Memory Products Product specification 2K-bit TTL bipolar PROM (512 x 4) oetoy DC ELECTRICAL CHARACTERISTICS -55C Ta < +125C. 4.5V <Voc <5.5V SYMBOL PARAMETER TEST CONDITIONS!?: 2 LIMITS UNIT Min | Typ | Max Input voltage Vir Low 0.8 v Vind High 2.0 v Vik Clamp Voc = 4.5V, |) = -18mA -1.2 Vv Output voltage CE = Low VoL Low Io = 16mMA 05 v Vou High (828131) Voc = 4.5V, lo = -2mA 2.4 Vv Input current Voc = 5.5V Iie Low V, = 0.45V -150 pA lin High Vv, =5.5V 40 pA Output current? Voc =5.5V louk Leakage (828130) CE = High, Vo = 5.5V 40 HA loz Hi-Z state (828131) CE = High, Vo = 5.5V 40 pA CE = High, Vo = 0.5V -40 pA los Short circuit (825131)8 Voc = 5.5V, TE = Low, Vo = OV, High stored -15 -85 mA Supply current loc CE = High, Voc = 5.5V | | | 130 | ma Capacitance CE = High, Vec = 5.0V Cin Input Vi = 2.0V 5 10 pF Cout Output Vo =2.0V 8 13 pF AC ELECTRICAL CHARACTERISTICS -55C < Ta, < +125C, 4.5V < Voc < 5.5V SYMBOL PARAMETER TO FROM LIMITS UNIT Min Typ> Max taa Access time* Output Address 60 ns tcE Access time* Output Chip Enable 30 ns tco Disable time Output Chip Disable 30 ns NOTES: 1. Positive current is defined as into the terminal referenced. 2. All voltages with respect to network ground. 3. Duration of short circuit should not exceed 1 second. 4. Tested at an address cycle time of tps. __ 5. Typical values are at Voc = 5V, Ta = +25 C. 6. Guaranteed, but not tested. November 10, 1987 1066 Philips Semiconductors Military Bipolar Memory Products Product specification 2K-bit TTL bipolar PROM (512 x 4) 825130 829131 TEST LOAD CIRCUITS VOLTAGE WAVEFORMS | 27 w Kaw > vi ge meee u 0.3V 0.3v ov Om Ag ! Le TTHL(tA) tty > <_ Oo AY 5.0V Om Aa - tTLH(tr) tTHL (th > [~~ Om Ag Ay 27V 27V 3.0v Onn] Ag O4; POSITIVE Og/o PULSE Vu vm Om} As DUT o3} 0 0.3 _ K03V oy om Ag 04|0 INCLUDES SCOPE tw 1 Ro CL AND JIG O-m] Az CAPACITANCE oe Ag input Pulse Definitions Om CE GND Lf INPUT PULSE CHARACTERISTICS Vu Rep. Rate | Pulse Width ttLH tTHL 1.5V 1MHz 500ns <5ns <5ns NOTE: Ay = 2700 Ro = 6000. CL = SOpF TIMING DIAGRAMS 3.0V ADDRESS * Vea ov cE ov You vm Vor LL tAA Ve = 1.5 3.0V ADDRESS ov 3.0V cE VM vu YOu Hi-Z vu HI-Z - vi le toe > OL Vou vm Vv r Ice OL Vag = 1.5V November 10, 1987 1067