MRF51 15 (SILICON) The RF Line 5 W 400 MHz RF POWER NPN SILICON RF POWER TRANSISTOR TRANSISTOR NPN SILICON ... designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-600 MHz frequency range. @ Specified 28-Vott, 400-MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 11 d8 Efficiency = 50% Characterized from 200 to 600 MHz @ Includes Series Equivalent Impedances MAXIMUM RATINGS 8-32 NC 2A t | Rating Symbol Value Unit WRENCH FLAT |v ! Collector-Emitter Voltage VCEO 33 Vide 8 | Le Coilector-Base Voltage VcBo 60 Vde Emitter-Base Voltage Vepo 4.0 Vde See EMITTER Collector Current Continuous \c 1.0 Adc i etree Total Device Dissipation @ Ta = 25C (1) Pp 12 Watts 4 COLLECTOR Derate above 25C 69 mw/C Storage Temperature Range Tstg -65 to +200 % (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Raic 12 cw CASE 244 1364 MRF5175 (continued) ELECTRICAL CHARACTERISTICS (Te = 25C unless otherwise noted.) Characteristic | Symbol I Min | Typ | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage 8VcEO 33 - - Vde (Ic = 30 mAdc, Ig = 0) Collector-Emitter Breakdown Voltage 8VcEs 60 - - Vde {ic = 30 mAdc, Vge = 0} Emitter-Base Breakdown Voltage BVeBo 4.0 - - Vde (ge = 1.0 mAdc, Ic = 0) Collector Cutoff Current icBo - - 0.5 mAde (Vg = 30 Vde, 1g = 0) ON CHARACTERISTICS DC Current Gain hee 10 - 100 _ (t = 250 mAdc, Voce = 5.0 Vde) DYNAMIC CHARACTERISTICS Output Capacitance Cob _ - 15 pF (Vog = 30 Vde, Ie = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain Gpe 1 - - dB (Voc = 28 Vdc, Pout = 5.0 W, f = 400 MHz) Collector Efficiency n 50 - _ % (Veg = 28 Vie, Pout = 5.0 W, f = 400 MHz) FIGURE 1 400 MHz TEST CIRCUIT SCHEMATIC + 28 Vde RF Output RF Input C1,C10 0.018 uF VITRAMON Chip L4 6 Turns, #20 AWG, 1/8 ID C2,C3,C9 1.0-10 pF JOHANSON Type 2951 L5 Ferrite Choke, FERROXCUBE VK200-20-48 c4 1.0-20 pF JOHANSON Type 3906 a1 2.7 Ohm, 1/8 Watt, 10% cs 100 pF UNDERWOOD (UNELCO) R2 5.1 Ohm, 1/8 Watt, 10% C6.C7 = 5.0 pF ATC Chip ca 0.1 uF ERIE Disc Ceramic Z1,23 Microstrip Line, 0.1 Wx 0.5" C11,C12 680 pF ALLEN BRADLEY Feedthru 22 Microstrip Line, 0.1" Wx 0.4 L 24 Microstrip Line, 0.075" Wx 2.8" L ui 3.9 wH Molded Choke . 2 Ferrite Bead, FERROXCUBE 56-590-65-38 Board Glass Teflon, m = 2.56, t = 0.062 L3 4 Turns, #22 AWG,0.1" 1D Input/Output Connectors Type N 1365 MRF5175 (continued) Pout. OUTPUT POWER (WATTS) Pout. OUTPUT POWER (WATTS) 65 6.0 FIGURE 2 OUTPUT POWER versus FREQUENCY 5.5 5.0 45 Vec = 28 Vde 160 200 260 6300 360 69400 846450 9500 550 600 650 f, FREQUENCY (MHz) FIGURE 4 OUTPUT POWER versus SUPPLY VOLTAGE f = 400 MHz 18 20 22 24 26 28 Vcc, SUPPLY VOLTAGE (VOLTS) Pout, QUTPUT POWER (WATTS) 65 6.0 5.5 5.0 45 4.0 3.5 3.0 25 2.0 15 0 FIGURE 3 OUTPUT POWER versus INPUT POWER 400 MHz 100 200 = 300 400 = 500 = 600 Voc = 28 Vdc 700-800-900 Pin, INPUT POWER (mW) FIGURE 5 SERIES EQUIVALENT IMPEDANCE ist 28 Vic eHVcc HE POUT =5.0W * 200 MHz 400 MHz 600 MHz 1.0 + j0.2 1.14 )2.0 1.3 + j3.5 Zh otis _| 6.5 ~ j31 71 = j23 WW -j12 FIGURE 6 400 MHz TEST CIRCUIT 1366 1000