BUK7Y59-60EX - NXP Semiconductors

FPAK

BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

7 May 2013 Product data sheet

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1. General description

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using

TrenchMOS technology. This product has been designed and qualified to AEC Q101

standard for use in high performance automotive applications.

2. Features and benefits

•Q101 compliant

•Repetitive avalanche rated

•Suitable for thermally demanding environments due to 175 °C rating

•True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

3. Applications

•12 V Automotive systems

•Motors, lamps and solenoid control

•Transmission control

•Ultra high performance power switching

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V

IDdrain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - - 17 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 37 W

Static characteristics

RDSon drain-source on-state

resistance

VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 38.2 59 mΩ

Dynamic characteristics

QGD gate-drain charge ID = 5 A; VDS = 48 V; VGS = 10 V;

Fig. 13; Fig. 14

- 2.8 - nC

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 2 / 13

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 S source

2 S source

3 S source

4 G gate

mb D mounting base; connected to

drain

1 2 3 4

LFPAK56; Power-

SO8 (SOT669)

mbb076

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BUK7Y59-60E LFPAK56;

Power-SO8

Plastic single-ended surface-mounted package (LFPAK56;

Power-SO8); 4 leads

SOT669

7. Marking

Table 4. Marking codes

Type number Marking code

BUK7Y59-60E 75960E

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V

VDGR drain-gate voltage RGS = 20 kΩ - 60 V

VGS gate-source voltage Tj ≤ 175 °C; DC -20 20 V

Tmb = 25 °C; VGS = 10 V; Fig. 1 - 17 AIDdrain current

Tmb = 100 °C; VGS = 10 V; Fig. 1 - 11.9 A

IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 67 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 37 W

Tstg storage temperature -55 175 °C

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 3 / 13

Symbol Parameter Conditions Min Max Unit

Tjjunction temperature -55 175 °C

Source-drain diode

ISsource current Tmb = 25 °C - 17 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 67 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

ID = 17 A; Vsup ≤ 60 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

Fig. 3

[1][2] - 8.8 mJ

[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[2] Refer to application note AN10273 for further information.

003aai655

0 30 60 90 120 150 180

Tj (°C)

(A)(A)

Fig. 1. Continuous drain current as a function of

mounting base temperature

Tmb (°C)

0 20015050 100

03aa16

120

Pder

(%)

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 4 / 13

003aai656

10-3 10-2 10-1 1 10

10-2

10-1

102

tAL (ms)

IAL

(A)(A)

(1)(1)

(2)(2)

(3)(3)

Fig. 3. Avalanche rating; avalanche current as a function of avalanche time

003aai657

1 10 102

10-2

10-1

102

VDS (V)

(A)(A)

DCDC

100 ms100 ms

10 ms10 ms

1 ms1 ms

100 us100 us

tp = 10 ustp = 10 us

Limit RDSon = VDS / ID

Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance

from junction to

mounting base

Fig. 5 - - 4.03 K/W

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 5 / 13

003aai538

10-6 10-5 10-4 10-3 10-2 10-1 1

10-2

10-1

tp (s)

Zth(j-mb)

(K/W)(K/W)

δ = T

single shotsingle shot

δ = 0.5δ = 0.5

0.20.2

0.10.1

0.050.05

0.020.02

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - VV(BR)DSS drain-source

breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 9; Fig. 10

2.4 3 4 V

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 9

- - 4.5 V

VGS(th) gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = 175 °C;

Fig. 9

1 - - V

VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.01 1 µAIDSS drain leakage current

VDS = 60 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 38.2 59 mΩRDSon drain-source on-state

resistance VGS = 10 V; ID = 5 A; Tj = 175 °C;

Fig. 11; Fig. 12

- - 132 mΩ

Dynamic characteristics

QG(tot) total gate charge - 7.8 - nC

QGS gate-source charge - 1.7 - nC

QGD gate-drain charge

ID = 5 A; VDS = 48 V; VGS = 10 V;

Fig. 13; Fig. 14

- 2.8 - nC

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 6 / 13

Symbol Parameter Conditions Min Typ Max Unit

Ciss input capacitance - 371 494 pF

Coss output capacitance - 69 82 pF

Crss reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

- 53 73 pF

td(on) turn-on delay time - 3.8 - ns

trrise time - 5.5 - ns

td(off) turn-off delay time - 6.5 - ns

tffall time

VDS = 45 V; RL = 5 Ω; VGS = 10 V;

RG(ext) = 5 Ω

- 5.2 - ns

Source-drain diode

VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.85 1.2 V

trr reverse recovery time - 14.5 - ns

Qrrecovered charge

IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 25 V - 10.3 - nC

003aai659

0 1 2 3 4

VDS(V)

(A)

VGS(V) = 10

6.5

5.5

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aai660

100

150

200

0 5 10 15 20

VGS(V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 7 / 13

003aai662

0 1 2 3 4 5 6 7 8

VGS (V)

(A)(A)

Tj = 25°CTj = 25°C

175°C175°C

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah027

-60 0 60 120 180

Tj(°C)

VGS(th)

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

003aah028

10-6

10-5

10-4

10-3

10-2

10-1

0 2 4 6

VGS(V)

(A)

maxtyp

min

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

003aai665

120

180

240

300

0 4 8 12 16

ID(A)

RDSon

(mΩ)6.5

VGS(V) = 10

5.5 6

Tj = 25 °C; tp = 300 μs

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 8 / 13

003aaj815

0.8

1.6

2.4

-60 0 60 120 180

Tj(°C)

Fig. 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 13. Gate charge waveform definitions

003aai667

0 2 4 6 8

QG(nC)

VGS

(V)

VDS= 48 V

VDS= 14 V

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

003aai668

102

103

10-1 1 10 102

VDS(V)

(pF) Ciss

Crss

Coss

Fig. 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 9 / 13

003aai669

0 0.3 0.6 0.9 1.2 1.5

VSD(V)

(A)

Tj= 25 °C

Tj= 175°C

Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 10 / 13

11. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT669 MO-235

sot669_po

11-03-25

13-02-27

Unit(1)

max

nom

min

1.20

1.01

0.15

0.00

0.25

0.50

0.35

4.41

3.62

2.2

2.0

6.2

5.8

0.85

0.40

Dimensions (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669

A1A2

1.10

0.95

A3b b2b3

0.1

L2w y

8°

0°

b4c c2D(1) D1(1) E(1) E1(1)

3.3

3.1

1.27

H L

0.25

0.19

0.30

0.24

4.20 1.3

0.8

0.25

0.9

0.7

4.10

3.80

5.0

4.8

1.3

0.8

A C

1/2 e

w A

0 5 mm

scale

12 3 4

mounting

base

y C

(A3)

detail X

Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 11 / 13

12. Legal information

12.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

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customer have explicitly agreed otherwise in writing. In no event however,

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is deemed to offer functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

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Notwithstanding any damages that customer might incur for any reason

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Quick reference data — The Quick reference data is an extract of the

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Applications — Applications that are described herein for any of these

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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purchase of NXP Semiconductors products by customer.

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 12 / 13

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

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12.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors BUK7Y59-60E

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Product data sheet 7 May 2013 13 / 13

13. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information .............................................2

7 Marking ................................................................... 2

8 Limiting values .......................................................2

9 Thermal characteristics .........................................4

10 Characteristics .......................................................5

11 Package outline ................................................... 10

12 Legal information .................................................11

12.1 Data sheet status ............................................... 11

12.2 Definitions ...........................................................11

12.3 Disclaimers .........................................................11

12.4 Trademarks ........................................................ 12

For more information, please visit: http://www.nxp.com

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Date of release: 7 May 2013

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