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1N2510R Availability
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1N2510R Information
Category » Diodes
Class » UHF/Microwave Mixer Diodes
Type » General Purpose
1N2510R Specifications
Military/High-Rel : N
V(RRM)(V) Rep.Pk.Rev. Voltage :
Band : X
Test Freq : 9.4G
Frequency Min. (Hz) : 8G
Frequency Max. (Hz) : 12G
V(FM) Max.(V) Forward Voltage :
Ct{Cj} Nom. (F) Junction Cap. :
NR Max. :
Noise Figure Max. (dB) : 9.5
Maximum Conversion Loss (dB) :
I(RM) Max.(A) Reverse Current :
Inp VSWR Max. :
If Imped. Min : 300
If Imped. Max. : 500
Power In (test) :
R(load) (Ohms) : 22
Zm (test) :
Burnout Abs Max. : 2.0
Semiconductor Material : Silicon
Maximum Operating Temp (шC) : 150
Package Style : DO-36
Mounting Style : T
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1N2510R Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di...
http://www.americanmicrosemi.com/information/spec/?ss_pn=1N2510R
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133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
Copyright © 2004 American Microsemiconductor Inc. All Rights Reserved.
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1N2510R Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di...
http://www.americanmicrosemi.com/information/spec/?ss_pn=1N2510R
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