Smart High-Side Power Switch Smart High-Side Power Switch PROFET BTS721L1 Data Sheet Rev. 1.3, 2010-03-16 Automotive Power Smart High-Side Power Switch BTS721L1 Smart Four Channel Highside Power Switch Features * Overload protection * Current limitation * Short-circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Product Summary Overvoltage Protection Operating voltage active channels: On-state resistance RON Nominal load current ,/ 120 Current limitation ,/ 6&U Vbb(AZ) 43 V Vbb(on) 5.0 ... 34 V two parallel four parallel one 100 50 25 m 2.9 4.3 6.3 A 8 8 8 A PG-DSO20 P-DSO-20 Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitive loads * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 1) Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance IN1 Input 1 .. 4, activates channel 1 .. 4 in case of IN2 logic high signal IN3 IN4 OUT1 Output 1 .. 4, protected high-side power output OUT2 of channel 1 .. 4. Design the wiring for the OUT3 max. short circuit current OUT4 ST1/2 Diagnostic feedback 1/2 of channel 1 and channel 2, open drain, low on failure ST3/4 Diagnostic feedback 3/4 of channel 3 and channel 4, open drain, low on failure GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2) GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4) Pin configuration (top view) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 * 20 19 18 17 16 15 14 13 12 11 Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Data Sheet 2 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Block diagram Four Channels; Open Load detection in on state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ata Sheet 3 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Maximum Ratings at Tj = 25C unless otherwise specified Parameter Symbol Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj,start = -40 ...+150C Load current (Short-circuit current, see page 5) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 , td = 200 ms; IN = low or high, each channel loaded with RL = 4.7 , Operating temperature range Storage temperature range Power dissipation (DC)5 Ta = 25C: Ta = 85C: (all channels active) Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C5), IL = 2.9 A, ZL = 58 mH, 0 one channel: IL = 4.3 A, ZL = 58 mH, 0 two parallel channels: IL = 6.3 A, ZL = 58 mH, 0 four parallel channels: Vbb Vbb Values Unit 43 34 V V IL VLoad self-limited 60 A V Tj Tstg Ptot -40 ...+150 -55 ...+150 3.7 1.9 C EAS 0.3 0.65 1.5 J VESD 1.0 kV -10 ... +16 2.0 5.0 V mA 15 41 34 K/W 4) dump W see diagrams on page 9 and page 10 Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) VIN IIN IST see internal circuit diagram page 8 Thermal resistance junction - soldering point5),6) junction - ambient5) 2) 3) 4) 5) 6) each channel: one channel active: all channels active: Rthjs Rthja Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for input protection is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 Soldering point: upper side of solder edge of device pin 15. See page 15 Data Sheet 4 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Electrical Characteristics Parameter and Conditions, each of the four channels Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) each channel, Tj = 25C: RON IL = 2 A Tj = 150C: two parallel channels, Tj = 25C: four parallel channels, Tj = 25C: Nominal load current one channel active: two parallel channels active: four parallel channels active: 5) Device on PCB , Ta = 85C, Tj 150C Output current while GND disconnected or pulled up; Vbb = 30 V, VIN = 0, see diagram page 9 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on Tj =-40...+150C: 10 to 30% VOUT, RL = 12 , Slew rate off Tj =-40...+150C: 70 to 40% VOUT, RL = 12 , Operating Parameters Operating voltage7) Undervoltage shutdown Undervoltage restart Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump Tj =-40...+150C: see diagram page 14 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 8 ) Overvoltage protection Tj =-40...+150C: I bb = 40 mA Standby current, all channels off Tj =25C: VIN = 0 Tj =150C: 7) 8) Values min typ max -- Unit m 85 170 100 200 2.5 3.8 5.9 43 22 2.9 4.3 6.3 50 25 -- A -- -- 10 mA ton toff 80 80 200 200 400 400 s dV/dton 0.1 -- 1 V/s -dV/dtoff 0.1 -- 1 V/s Vbb(on) Vbb(under) Vbb(u rst) 5.0 3.5 -- ---- V V V Vbb(ucp) -- 5.6 34 5.0 5.0 7.0 7.0 Vbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) 34 33 -42 --0.5 47 43 ---- V V V V --- 28 44 60 70 A IL(NOM) IL(GNDhigh) Ibb(off) V At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in circuit diagram on page 8. Data Sheet 5 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Parameter and Conditions, each of the four channels Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Unit -- -- 12 A --- 2 8 3 12 mA each channel, Tj =-40C: IL(SCp) 11 18 25 9 14 22 Tj =25C: 5 8 14 Tj =+150C: two parallel channels twice the current of one channel four parallel channels four times the current of one channel Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) -8 --8 -two parallel channels -8 -four parallel channels A Leakage output current (included in Ibb(off)) IL(off) VIN = 0 Operating current 9), VIN = 5V, Tj =-40...+150C IGND = IGND1/2 + IGND3/4, one channel on: IGND four channels on: Protection Functions10) Initial peak short circuit current limit, (see timing diagrams, page 13) A (see timing diagrams, page 13) Initial short circuit shutdown time Tj,start =-40C: toff(SC) Tj,start = 25C: --- 15 12 --- ms -- 47 -- V 150 -- -10 --- C K --- -610 32 -- V mV (see page 12 and timing diagrams on page 13) VON(CL) Output clamp (inductive load switch off)11) at VON(CL) = Vbb - VOUT Thermal overload trip temperature Thermal hysteresis Tjt Tjt Reverse Battery Reverse battery voltage 12) Drain-source diode voltage (Vout > Vbb) IL = - 2.9 A, Tj = +150C -Vbb -VON 9) Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) 12) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8). 10) Data Sheet 6 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Parameter and Conditions, each of the four channels Symbol at Tj = 25 C, Vbb = 12 V unless otherwise specified Values min typ max Diagnostic Characteristics Open load detection current, (on-condition) 20 -400 each channel, Tj = -40C: I L (OL) 20 -300 Tj = 25C: 20 -300 Tj = 150C: twice the current of one channel two parallel channels four times the current of one channel four parallel channels 13 ) Open load detection voltage Tj =-40..+150C: VOUT(OL) 2 3 4 Internal output pull down (OUT to GND), VOUT = 5 V Tj =-40..+150C: RO 4 10 30 1 Input and Status Feedback14) Input resistance (see circuit page 8) Tj =-40..+150C: Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current VIN = 0.4 V: Tj =-40..+150C: On state input current VIN = 5 V: Tj =-40..+150C: Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 14), Tj =-40..+150C: Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 14), Tj =-40..+150C: Status invalid after positive input slope Tj =-40..+150C: (open load) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: Tj =-40...+25C, IST = +1.6 mA: ST low voltage Tj = +150C, IST = +1.6 mA: 13) 14) Unit mA V k RI 2.5 3.5 6 k VIN(T+) 1.7 -- 3.5 V VIN(T-) 1.5 -- -- V -1 0.5 -- -50 V A 20 50 90 A td(ST OL4) 100 320 800 s td(ST OL5) -- 5 20 s td(ST) -- 200 600 s 5.4 --- 6.1 --- -0.4 0.6 V VIN(T) IIN(off) IIN(on) VST(high) VST(low) External pull up resistor required for open load detection in off state. If ground resistors RGND are used, add the voltage drop across these resistors. Data Sheet 7 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Truth Table Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2) Chip 1 Chip 2 IN1 IN3 IN2 IN4 OUT1 OUT3 OUT2 OUT4 L L H H L L H L H L H L H X L L H H Z Z H L H L H L H X L H X L L H L L H L H X L H X H H H Z Z H L H X L H X L X H L H X X X L L H L H X X X L H X L H X L L L L L X X L H H H L L L X X L L L ST1/2 ST3/4 BTS 721L1 Normal operation Open load Channel 1 (3) Channel 2 (4) Short circuit to Vbb Channel 1 (3) Channel 2 (4) Overtemperature both channel Channel 1 (3) Channel 2 (4) Undervoltage/ Overvoltage L = "Low" Level H = "High" Level H H H H H(L15)) H L H(L15)) H L L16) H H(L17)) L16) H H(L17)) H L L H L H L H X = don't care Z = high impedance, potential depends on external circuit Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms 9 ,EE EE 9 21 9 21 /HDGIUDPH , ,1 , ,1 , 67 9 ,1 9,1 967 9EE ,1 ,1 287 352)(7 &KLS 287 67 *1' 5 , / , / 9 287 , *1' 921 9 21 /HDGIUDPH , ,1 , ,1 , 67 9 ,1 9,1 967 9287 ,1 287 352)(7 &KLS 287 67 *1' 5 *1' 9EE ,1 , / , / 9 287 , *1' 9287 *1' Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 or a single resistor RGND = 75 for reverse battery protection up to the max. operating voltage. 15) With additional external pull up resistor An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 17) Low resistance to V may be detected by no-load-detection bb 16) Data Sheet 8 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Input circuit (ESD protection), IN1...4 ,1 5 Overvoltage protection of logic part GND1/2 or GND3/4 9 EE , (6'=' , , 9 5, ,1 = ,1 , /RJLF *1' 67 5 67 9 ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). = *1' 5 *1' 6LJQDO*1' Status output, ST1/2 or ST3/4 VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 k typ., RGND = 150 9 5 67 21 Reverse battery protection 67 9 *1' (6' =' 5 67 ,1 9EE 5, /RJLF 67 ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 287 3RZHU ,QYHUVH 'LRGH *1' 5*1' Inductive and overvoltage output clamp, 6LJQDO*1' OUT1...4 9EE 9= 5/ 3RZHU*1' RGND = 150 , RI = 3.5 k typ, Temperature protection is not active during inverse current operation. 9 21 287 352)(7 3RZHU*1' VON clamped to VON(CL) = 47 V typ. Data Sheet 9 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Open-load detection, OUT1...4 GND disconnect with GND pull up ON-state diagnostic condition: VON < RON*IL(OL); IN high (channel 1/2 or 3/4) 9 EE 9 ,1 9 921 21 ,1 ,1 9EE ,1 352)(7 67 *1' 287 287 287 2SHQORDG GHWHFWLRQ /RJLF XQLW 9 9 EE 9 67 *1' Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with energized inductive load 5 (;7 9 ,1 352)(7 67 *1' 2SHQORDG GHWHFWLRQ 5 287 287 287 2 9 6LJQDO*1' EE For an inductive load current up to the limit defined by EAS (max. ratings see page 3 and diagram on page 10) each switch is protected against loss of Vbb. GND disconnect Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load the whole load current flows through the GND connection. (channel 1/2 or 3/4) 9 9EE KLJK 2)) /RJLF XQLW ,1 ,EE EE ,1 9EE ,1 352)(7 67 *1' 287 287 9 9 9 ,1 ,1 67 9 *1' Any kind of load. In case of IN = high is VOUT VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. Semiconductor Group Data Sheet 9 2003-Oct-01 10 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Inductive load switch-off energy dissipation ( EE ( $6 (/RDG 9EE ,1 352)(7 287 / 67 *1' =/ ^ 5 (/ (5 / Energy stored in load inductance: 2 EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : EAS= IL* L (V + |VOUT(CL)|) 2*RL bb OQ(1+ |V IL*RL OUT(CL)| ) Maximum allowable load inductance for a single switch off (one channel)5) / I ,/ Tj,start = 150C, Vbb = 12 V, RL = 0 L [mH] IL [A] Data Sheet 11 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Typ. on-state resistance Typ. standby current RON [mOhm] Ibb(off) [A] ; Vbb = 9...34 V, IN1...4 = low ; IL = 2 A, IN = high Tj [C] Vbb [V] Typ. initial short circuit shutdown time Typ. open load detection current ; Vbb =12 V IN = high IL(OL) [mA] t o ff(S C ) [ms ec ] 16 14 12 10 8 6 4 2 0 -40 -25 0 25 50 75 100 125 15 T j , s ta rt Vbb [V] Data Sheet 12 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Timing diagrams Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: ,1 ,1 ,1 9 EE 9 9 287 9 W G 67 67 287 287 ,/ , / 2/ 67RSHQGUDLQ W W *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp: Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling ,1 ,1 RWKHUFKDQQHOQRUPDORSHUDWLRQ 67 , 9 / 287 , / 6&S , , / 6&U / 67 W The initial peak current should be limited by the lamp and not by the initial short circuit current IL(SCp) = 14 A typ. of the device. Data Sheet W RII 6& W Heating up of the chip may require several milliseconds, depending on external conditions (toff(SC) vs. Tj,start see page 12) 13 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Figure 5a: Open load: detection in ON-state, open load occurs in on-state Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) ,1 ,1 ,1FKDQQHOQRUPDORSHUDWLRQ ,, // , / 6&S 9287 , / 6&U FKDQQHO RSHQ ORDG ,/ W 67 RII 6& W G 672/ RSHQ ORDG QRUPDO ORDG W G 672/ W G 672/ W G 672/ 67 W W td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ Figure 5b: Open load: detection in ON-state, turn on/off to open load Figure 4a: Overtemperature: Reset if Tj <Tjt ,1 ,1 IN2 channel 2: normal operation 67 9 287 9 287 , / channel 1: open load 7 - W G 67 W 67 t G 672/ W G 67 W G 672/ W The status delay time td(STOL4) allows to distinguish between the failure modes "open load in ON-state" and "overtemperature". Data Sheet 14 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Figure 6b: Undervoltage restart of charge pump Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load RIIVWDWH 9 287 , / EE XUVW 9 67 W W d(ST) G 67 9 9 FKDQQHORSHQORDG 9 W G 672/ 9 EE RYHU RIIVWDWH channel 2: normal operation RQVWDWH IN2 921 &/ 9 RQ ,1 EE RUVW EE XFS EE XQGHU 9 EE W IN = high, normal load conditions. Charge pump starts at Vbb(ucp) = 5.6 V typ. td(ST OL5) depends on external circuitry because of high impedance Figure 7a: Overvoltage: Figure 6a: Undervoltage: ,1 ,1 9 9bb EE V bb(under) V ON(CL) Vbb(over) V bb(o rst) Vbb(u cp) 9bb(u rst) 9 287 9 287 67 67RSHQGUDLQ W W Data Sheet 15 Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 1.27 0.35 8 ma x 7.6 -0.2 1) +0.09 0.35 x 45 0.23 2.65 max 2.45 -0.2 0.2 -0.1 Package Outlines 0.4 +0.8 +0.15 2) 0.2 24x 20 0.1 10.3 0.3 11 GPS05094 1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side Figure 1 PG-DSO-20 (Plastic Dual Small Outline Package) (RoHS-compliant) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Data Sheet 16 Dimensions in mm Rev. 1.3, 2010-03-16 Smart High-Side Power Switch BTS721L1 Revision History Version Date Changes Rev. 1.3 2010-03-16 page 6: changed reference to the timing diagram Rev. 1.2 2009-07-21 page 1: added new coverpage page 6: Initial short circuit shutdown time changed: toff(SC) -40 C to 15 ms toff(SC) 25 C to 12 ms page 12: changed graphic V1.1 2007-08-30 Creation of the green datasheet. First page : Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green. Data Sheet 17 Rev. 1.3, 2010-03-16 Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 3/16/10. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.