Standard Power MOSFETs BUZ 20 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V N-CHANNEL ENHANCEMENT MODE Tosiom = 0.2.0 Features: uw SOA is power-dissipation limited mu Nanosecond switching speeds a Linear transfer characteristics a High input impedance u Majority carrier device File Number 2254 9 $ 92Cs -33741 TERMINAL DIAGRAM The BUZ 20 is an n-channel enhancement-mode silicon- gate power field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar TERMINAL DESIGNATION switching transistors requiring high speed and low gate- drive power. This type can be operated directly from inte- grated circuits, The BUZ 20 is supplied in the JEDEC TO-220AB plastic (FeNGeE) package. OC) TOP VIEW MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): DRAIN-SOURCE VOLTAGE 2.0.0... cece cece eee nee nent e cern eee es Voss DRAIN-GATE VOLTAGE, Ros = 20 KO 20... ccc cece cence en ence neces - Voor GATE-SOURCE VOLTAGE 0... ccc cece ce ene eee t ence gene .. Ves DRAIN CURRENT, RMS Continuous Te = 55C... ec r eee ens -. Ib Pulsed Tc = 25C ...........004. POWER DISSIPATION @ Tc = 25C... ee eee eee OPERATING AND STORAGE TEMPERATURE ....... DIN HUMIDITY GATEGORY DIN 40040 ........... IEC CLIMATIC CATEGORY DIN IEC 68-1 3-6 JEDEC TO-220AB ~55 to +150 E 5/150/56 SOURCE | pet to Tine g92cs-39528 DRAIN Ofer RP <<< Standard Power MOSFETs ELECTRICAL CHARACTERISTICS At Case Temperature (T;) = 25C Unless Otherwise Specified LiM CHARACTERISTIC TEST CONDITIONS ts UNITS MIN. TYP. MAX. Drain-Source Breakdown Voltage BVoss Ves = OV 100 - - Ip = 0.25 MA Vv Gate-Threshold Voltage Vesen Vos = Vas 2.1 3 4 lo =1mA Zero-Gate Voltage Drain Current Ipss T= 25C _ 20 250 Ti = 125C _ 100 1000 uA Vos = 100 V, Ves = OV Gate-Source Leakage Current jess Ves = 20V _ 10 400 nA Vos = OV Drain-Source On Resistance Toston Ves = 10V _ 0.15 02 Q ID=6A Forward Transconductance Qs Vos = 25 V 27 40 _ s Ip = 6A input Capacitance Ciss Ves = 0V _ 4600 2000 Output Capacitance Coss Vos = 25 V 300 500 pF Reverse Transfer Capacitance Crs f= 1MHz _ 80 140 Turn-On Time ton taton Veo = 30 V _ 30 45 (ton = tations + tr) t Ip=29A _ 50 75 Ves = 10 V ns Turn-Off Time tor tarotn ss _ 110 140 _ Res = 509 (tot! = tatom + tr) t _ 60 80 Thermal Resistance, Junction-to-Case Rauc = 1.67 C/W Thermal Resistance, Junction-to-Ambient Resa = 75 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC TEST CONDITIONS LIMITS UNITS MIN. TYP. MAX. Continuous Reverse Drain Current lor Te = 25C _ _ 12 A Pulsed Reverse Drain Current loam _ _ 48 Diode Forward Voltage Vso Ir = 2 X Iba _ Ves = OV, T) = 25C 14 18 v Reverse Recovery Time tr T, = 25C, Ir = lon _ 200 ~ ns Reverse Recovered Charge Qar | div/dt = 100 A/us, Va = 30V) 0 1.6 _ uc 10? 10 DRAIN CURRENT {ip) A 5 i h r 107 40 5 403 10? 5 DRAIN-TO-SOURCE VOLTAGE (Vos) -- V 10" 5 Fig. 1 - Maximum safe operating areas for all types. 3-7 Standard Power MOSFETs BUZ 20 80 5 70 4 * 60 z 2 a 5 > 50 B> 3 9 a! E az 40 ze o #3 z= 2 9 30 rs ac < Wu oe 3 Q 20 1 10 9 ar 0 50 100 ~=-150 o 50 100 150 JUNCTION TEMPERATURE (T ,) C CASE TEMPERATURE (Tc) C 9268-44171 Fig. 2 - Power vs. temperature derating curve for all types. Fig. 3 - Normalized gate threshold voltage as a function of junction temperature for all types. 6.5 15 , 80 us PULSE TEST Vos = 25 <x 0.4 | we Ts 2 5 : 3 - 10 2a 03 Z I 55 ge 3 % 62 z = 0.2 = g z a < uw 9 @ 0.1 & z 3 0 -50 0 50 100 150 0 5 40 JUNCTION TEMPERATURE(T 4) 92G8-44174 GATE-TO-SOURCE VOLTAGE (Ves) ~ V Fig. 4 - Normalized drain-to-source on resistance to junction Fig. 5 - Typical transfer characteristics for all types. temperature for all types. 30 80 ws PULSE 6 Hs PU 80 ws PULSE TEST R=715W Voge T= 28 C Vos = 25 V, T, = 25C 20,0V 40,0V oa? < i ! : 3 20 Ss _ Ww Z g w < x fF fig Oo 3 2 3 9 a Z 4 z 0 Oo 2 a a 6,0V 2 v z 7 5.0V 45 0 Lov 0 9 2 4 6 8 0 S 10 1s DRAIN-TO-SOURCE VOLTAGE (Vos) V DRAIN CURRENT (Iv) ~ A Fig. 6 - Typical output characteristics. Fig. 7 - Typical transconductance vs. drain current. S 2 ov Ss 2 w rT wn on ~ oo 2 N DRAIN-TO-SOURCE ON RESISTANCE (rosions) 92 _ 0 . 20 30 DRAIN CURRENT (Io) A Fig. 8 - Typical on-resistance vs. drain current. = = DRAIN CURRENT (1p) ~ A uw 0 50 100 150 CASE TEMPERATURE (Tc) C Fig. 10 - Maximum drain current vs. case temperature. 2 > w = 2 THERMAL RESPONSE (Zinc) w 107 105 5 10% 5 103 5 0? 5.107 5 10 10! RECTANGULAR PULSE DURATION (t1) S Fig. 12 - Maximum effective transient thermal impedance, junction- to-case vs. pulse duration. GATE-TO-SOQURCE VOLTAGE (Ves) V Standard Power MOSFETs BUZ 20 10 Ves = 0, f = 1 MHz 10 CAPACITANCE (C) ~ nF 10? 0 10 20 30 40 DRAIN-TO-SQURCE VOLTAGE (Vos) V Fig. 9 - Typical capacitance vs. drain-to-source voltage. 102 80 yss PULSE TEST 5 J=150C TYP. _ o a _ o o REVERSE DRAIN CURRENT (inp) A a 10-1 0 05 10 15 20 25 3.0 SOURCE-TO-DRAIN VOLTAGE go) -Vv 92GS-44175 Fig. 11 - Typical source-drain diode forward voltage. 18 Ip ous = 18.4 v 0 0 20 BU) 40 TOTAL GATE CHARGE (Qo) nC Fig. 13 - Typical gate charge vs. gate-to-source voltage. 3-9