
71598HA (KT)/2239MO/D288MO/D025KI, TS No.1885-1/2
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number:EN1885C
LFB01, 01L
Silicon Planar Leadless Type
Ultrahigh-Speed Switching Diode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
1137 [LFB01, 01L]
Features
· Highly reliable leadless glass sleeve structure.
· Very small size.
· Capable of being suface-mounted.
· Forward voltage : VF max=1.2V.
· Interterminal capacitance : C max=3pF.
· Reverse recovery time : trr max=4ns.
C:Cathode
A:Anode
retemaraPlobmySsnoitidnoCL10BFL10BFLtinU
egatloVesreveRkaePV
MR 5509V
egatloVesreveRV
R0508V
tnerruCdrawroFkaePI
MF →084Am
tnerruCdeifitceRegarevAI
O→051Am
tneruCegruSI
MSF →2A
noitapissiDrewoPelbawollAP →003Wm
erutarepmeTnoitcnuJjT→571+
erutarepmeTegarotSgtsT →571+ot56–
˚C
˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVdrawroFV
FIFAm001= 2.1V
tnerruCesreveR IR1V
RV03= 1.0Aµ
IR2RVhcaetA 5.0Aµ
ecnaticapaClanimretretnICV
RzHM1=f,V0= 3Fp
emiTyrevoceResreveRt
rr VRI,V6= FR,Am01= L05= Ω4sn
Reverse Recovery Time (trr) Test Circuit
Unit (resistance :Ω, capacitance :F)