Parameter Symbol Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
voltage
Maximum forward
IF=10.0A
Maxium Forward surge current, 8.3ms
singlehalf sine-wave superimposed on
rate load (JEDEC method)
VR=VRRM TA=25°C
TA=100°CVR=VRRM
Page 1
QW-BB033
Chip Schottky Barrier Rectifier
REV:A
Comchip Technology CO., LTD.
VRRM
VR
VRMS
IO
VF
IFSM
IR
RθJc
TJ
20
20
14
40
40
28
60
60
42
10.0
0.75
150
0.5
50
3.0
80
80
56
150
150
105
V
V
V
A
V
A
mA
°C/W
°C
0.55 1.00
Operating temperature
Storage temperature TSTG -65 to +175 °C
-55 to +125 -55 to +150
Dimensions in inches and (millimeters)
D2PAK
Reverse Voltage: 20 to 200 Volts
Forward Current: 10.0 Amp
RoHS Device
CDBD1020-G Thru. CDBD10200-G
1020-G
CDBD
1040-G
CDBD
1050-G
CDBD
1060-G
CDBD
1080-G
CDBD
10150-G
CDBD
50
50
35
Junction to Case
0.402(10.20)
0.386( 9.80)
0.192(4.8)
0.176(4.4)
0.370(9.40)
0.354(9.00)
0.205(5.20)
0.189(4.80)
0.063(1.60)
0.055(1.40)
0.024(0.60)
0.016(0.40)
0.055(1.40)
0.047(1.20)
0.185(4.70)
0.169(4.30)
0.012(0.30)
0.004(0.10)
0.108(2.70)
0.092(2.30)
0.046(1.20)
0.032(0.80)
30
30
21
1030-G
CDBD
100
100
70
10100-G
CDBD
10200-G
CDBD
200
200
140
0.85
IR
mA
2
13
Maximum Forward rectified current
(See fig. 1)
MaximumReverse
current
Typ.Thermal
resistance
Features
-Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
-Low profile surface mounted application in order to
optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500 /228
Mechanical data
Case: TO-263/D2PAK, molded plastic.-
Terminals: solderable per MIL-STD-750, -
method 2026.
Polarity: Indicated by cathode band.-
-Weight:1.70 gram(approx.).
Weunting Position: Any-PIN 1
PIN 3 PIN 2
Maximum Ratings (At Ta=25°C, unless otherwise noted)