Silicon Power Diodes TF o1-0! Diode type Vanm | teams | leav leom 1 la | Vro | ote | Tum lt Rena Outline Wire ended Vv A A A A?s TuAl Vo ima] c CIW Fig. - IN4002 100 1.6 1 30 45 | 510.85 }90 | 175 80 1 a 1N4003 200 He 1N4004 400 1N4005 600 i iN4006 800 1N4007 1000 mu iN5401 100 5 3 200 200 | 10 170 65 2 + IN5402 200 30 (lead a 1N5404 400 cooled- o 1N5406 600 10 mm oO IN5407 800 wires) o IN5408 1000 o o Stud Stud mA Ringc Rinck | M ru Anode Cathode CW | C/W tkgm zs GD12NO2 | GD12R02 200 40 17 240 288 |} 3]0.98 1116] 175] 20 025 {0.22 3 3 GD12N04 | GD12R04 400 D GD12N08 | GD12R08 800 ~ GD12N12 | GD12R12 | 1200 m GD12N14 |GD12R14 | 1400 GD12N16 | GD12R16 | 1600 a GD1i6N02 | GD16R02 200 47 30 282 397 | 3] 1.09 | 5.7 [ 175 1.25 0.25 [022 3 GO16N04 | GO16R04 400 GD16N08 | GD16R08 800 aA GO16N12 | GO16R12 | 1200 GO16N14 | GO16R14 1400 bd GOIGN16 | GOIGR16 | 1600 > GD25N02 | GO25R02 200 47 30 400 800 | 3] 09 57 | 175 1.25 025 {022 3 GD25N04_ | GD25R04 400 GD25N08 +} GD25R08 800 GD25N12 | GD25R12 1200 GD25N14 | GD25R14 1400 GD25N16_ | GD25R16 1600 GD40N02 | GD40R02 200 118 70 750 2800 | 8] 1.0 2.0 | 175 0.68 Q1 j044 4 GD40N04 | GO40R04 400 GD40N08 | GDO40R08 800 GD40N12 | GD40R12 1200 GD40N14 | GD40R14 1400 GD40N16_ | GD40R16 1600 GD75N02 | GD75R02 200 118 75 1495 11175 |10 | 0.925) 1.5 | 175 0.44 o1 044 4 GO75N04 | GO75R04 400 GD75N08 | GO75R08 800 GO75N12 | GD75R12 1200 GD75N14 | GD75R14 1400 GD75N16_ | GD75R16 1600 GD110N02 | GD110R02 200 250 160 2800 0000 {10 | 0.85 11 | 180 035 01 18 5 GD110N04 | GD110R04 400 GD110N08 | GD110R08 800 GD110N12 | GD110R12 | 1200 GD110N14 | GD110R14 | 1400 GD110N16 {GD110R16 | 1600 GD300N02 | GD300R02 200 600 380 6050 | 183000 115 | 0.95 | 0.75] 180 0.13 0.04 (2.6 6 GD300N04 | GD300R04 400 GD300N08 | GD300R08 800 GD300N12 | GD300R12 | 1200 GD300N14 | GD300R14 | 1400 GD300N16 | GD300R16_[ 1600 GD400N02 | GD400R02 | 200 630 400 8250 | 340000 }15 | 0.80 | 0.55} 190 0.13 0.04 [2.6 6 GD400N04 | GD400R04 | 400 GD400N08 | GD400R08 | 800 GD400N12 | GD400Rt12 | 1200 GD400N14 | GD400R14 | 1400 GD400N16 | GD400R16 | 1600 G D RECTIFIERS LTpD Varm Repetitive peak reverse voltage rating. lerms RMS forward currgnt rating. leay mean forward current rating, T, = 45C (wire ended types) or T. = 100C (Stud mounted types), 180 conduction, half sine waveform. lesm surge current, peak value of half sine wave of duration 10ms; T; = 25C at start of surge. i*t surge energy rating, 10 ms duration, Ty = 25C at start of surge. Ip maximum reverse current at Vany with Ty = Tyyy- Vio forward conduction threshold voltage; T, = Tyyy- te forward conduction slope resistance; T; = Tyjy Tym maximum permissible junction temperature. Ringa thermal resistance, junction to ambient air, 180 conduction. Rinuc thermal resistance, junction to case, 180 conduction. Rinck thermal resistance, case to heatsink. M mounting torque, base coated with heatsink compound, stud unlubricated. /7 G D RECTIFIERS LTD Tel: (0444) 243452 Fax: (0444) 870722 Telex: 877977 RECIFY G + mC @tLD Yu coum G D RECTIFIERS LTD Silicon Power Diodes USE D M@@ 3768e4e 0000015 4 EAGDRTT-6/- O/ Fig.1 Fig.2 05:3 2:5 008 4 4 s C Weight 0,49. Weight 1,4g. Fig.3 Fig.4 DO-4 535 DO-5 a an J a tt -F 46 25-4 +44 3-6 ' ids 4 11-4 t= ) fF LP = tar jt 11-5 1 11:5 [ . J i 17-45 AF { , t | |e 10-a2UNF-2A _ LL 28 UNF-2A Weight 6g. Weight 17g. Fig.5 Fig.6 21-4 re 08-4 [- | 010-5 n a] OT oN Jf r ; 4 | f U Hi [L- --4 | jd . THT ; ji] fide f | 148 200 i ! ! y Li 70 nee. wl_ 925 @28:3+-[_ J 46 2 9-5 i, r ; 4 | 28 | = += 15:7 | | 18 ttl - 27AF . f 21 31-5 AF ae yo Weight 130g. Weight 250g. | 34-16 UNF -2A The policy of the Company is one of continuous improvement and we reserve the right to change specifications without notice J G D RECTIFIERS LTD Tel: (0444) 243452 Fax: (0444) 870722 Telex: 877977 RECIFYG 4 mc COMPANY