1 2 SWITCHI T N | T RS IN ORDER OF (1) MAX RISE TIME, (2) fab & . NG RA S S 0 (3) TYPE No. a [Z] [TIMAX [ MAX | MAX | MAX [MAX Pc BIAS DWG #]E C LINE TYPE RISE DELAY}; STORE! FALL [IN FREE MAX. Cob bb |STRUCTURE|M|MAX. 1200 EO No. No. fab TIME TIME TIME TIME AIR @ Veb le hFE SAT. X |P-PNP A|TEMP] s/a AD tr td ts tf 25C RES. Cob |N-NPN T T0200 |DE (Ha (s) {s) {s) (s) (W) (V} (A) (Q} (F} ~ (s} (C} {Ser. TE [BSS44 TOMSA| 8On 450nD [870m 0D [20D | 70 # [T0Om# [T00p P-PE Si (2000S |TO39 =A 2# |2SC151H 80MS5A] 80nt 5Ont |150nt 80nt |750mS |6.0 | 10mZ) 20 A 20 7.0p N-E Si ]175//TO39 JA iz 3# |2SC152H BOMSA| 80nt 5Ont 1150nt 80nt_ |750me% [6.0 Z| 10mM 20 A 20 7.0p N-E Si_117543|TO39 IA 4# 128C803 GO0.OMS 80n 2.0u T.6u 5.0 6 4.0 @ [400mgZ) 70 7.0 9.0p N Si 11753 {TOS AD 5# 12SC458K 1O0OM5A gontg 220nt 300nte 200m 1.0@ | 10mg) 60 A 40 4.0pa N-E Si [125J [S8 B _ 6# |28C1707AH 100M8A|_ 80n@t 220nt_ |300ndt |200ms_|1.0 SZ | 10ml100 A {8.0 3.5pi N-D Si_j175J|TO18 [A | 7# 12SC1707H TOOMEA| 80n@t 220nt [300n@T |200m% 11.0 @ | 10mg 100 A 18.0 3.5pl N-D Si [1755 /TO18 [A 8# ]2T80 120MSA] 80nd 300n% |300m 6.0 Z| 10mg] 162 Z 40 8.0p N-PE Si ]150J |TO18 Dp d ___ | 120MSA]__ 80ng 300nD_|300m 6.0 Z | 10mg 162 Z 40 8.0p! N-PE Si_[150J |TO18 g T2OM8Al 80n@ 300no [300m 6.0 | 10mZl250 2 20 8.0p N-PE Si [50J |TOTS 120M8A} 80nZ 300n@ |300m 6.0% | 10mz) 85 20 8.0pi N-PE Si ]200J |TO18 D ____ |. 120M84]_ 80nd iL 300n@_|300m 60D | 10mg 70 Z 40 8.0p! N-PE Si_|200J |TO18 g T20MEA[ 8OnS 3O0One [300m 6.0 2 T 10mg) 85 40 8.0p N-PE Si |200J {TOTS @ 120M8A] 80nd 300n% |300m 6.0 B | 10md)250 A 40 8.0pd N-PE Si |200J |TO18 go 120M8A|_ 80nd 300n%_|300m 6.0 D | 10mg 170 Z 20 8.0pi N-PL. Si_|200J |TO18 @ T20MSA| 80nZ 300no [300m 6.0 D [10mzj250 20 8.0pl N-PL Si [200 /TOT8 BD 175M 80ndt 1.2ugt 1.0 2.0 D |500mZ]200 # |300m# N-PLt Si |2005 |B58a = jA 175M 80ndt 1.2udt 1.0 2.0 @ |500mz|200 # N-PLt Si_|200J {B58a__|A 175M8 8Onet T.2ut 10 2.0 |500mz|200 # N-PLT Si [200J 1B58a JA 175MS 80nZt 1.2ugt 1.0 2.0 D |500mZ200 # N-PLT Si }200J |B58a_ = |A | 175M 80nZt 1.2u@t 1.0 2.0 Z |00m%j200 # N-PLt Si [2005 [B58a_s|A 175M 80nZt T.2ugt 7.0 2.0 B [600mgZ)200 # |300m# N-PLT Si [200J|B58a JA 175M 80nSt 1.2ugt 1.0 2.0 D |500mZ)200 # N-PLt Si |200J |B58a [A 175M8 80net 1.2ud1 1.0 _12.0 g 500m 200 # N-PLt Si_|200J |B58a_s|A 175M8 80net T.2ugt 1.0 2.0 500m%| 200 # N-PLT Si [200/|/B58a_ fA 175M8 80nCt 1.2u@1 1.0 2.0 DB |500m~]200 # N-PLtT Si |200J {B58a_ = |A __._ | 200M8A{_ 80n 130n 55n 600m 1.5 D |150mZi_ 30 A 12p N-PE Si [175A/TO5 AS 320M8 BOnS T20n 80n [150m 3.0 @ [ 50mg 40 30 P-ME Ge TOS 320M5 80nS 120n 80n 1150m 3.0 D | 50mz) 40 30 P-ME Ge To1s =|A 320M8 BOND, 120n 80n 150m 3.0 DB | bome 40 30 P-ME Ge TO18_ A 400MSA, 8Onw T10n@ 11.0 B 2.0 @ | 1OmZ) 20 #A 3.0n |P-DPE Si [175d ]TO18 | 150MSA| 85n 130n 55n 12.0% 1.5 DB |150mgj 20 A [4.5 12p4 N Si }175J {TOS AD _.| 15OM8Al 85n 100n 65n 12.0 D 1.0 DZ 1150mgji20 7 |3.3 12p) N Si_1175J |TO5 AD. 90n 50n [300n [100n 15 2.0% |[5.0mD{ 10 # |.20 # |[100p N Si [2003 |TO5 A 90n 50n |300n |100n j4.0 2.0 D |6.0mH| 10 #A |.20 # |100pz N Si |200J |T65 90n 50n__{300n 100n__({1.5 2.0 DZ [5.0md| 10 #A 1.20 # {1000p N Si_[200J |TO5 A 90n 50n |300n TOOn [4.0 2.0 Z {5.0m 10 #A (20 # 1100p N Si (200C|T65 90n 50n |300n = |100n 1.5 2.0 D |5.0mH) 10 #A |.33 # |100pPzZ N Si |200J |TO5 A _ 90n 50n _|300n__{100n__|4.0 2.0 D |5.0m 10 #A |.33 # |100pH N Si_|200C |T65 90n 50n 300n 100n 15 2.0 @ [5.0m 10 #A 133 # |100pI N Si [2007 |TO5 AD 90n 50n |300n 100n =}4.0 2.0 D |5.0mS] 10 #A [1.33 # |100pa4 N Si ]200C |T65 100MSA|_ 90n__| 30n_ |[350n [|150n_ (7.0% 1.0 1.0m% | 40 4 20ps4 P Si 1200S |TO39__ [Ag 2Z00MS8A| 90n@t T50nt | 160nZT |200m 10@ | 10mg 35 TA 12 8.0pid P-PE Si ]175J/TO18 JA 150MSA} 95ntd 195nt |240ntd |300m 1.0 Z | 10mg] 80 A |7.0 5.5pa N-E Si |150S|TO18 JAS 45# |28C1776_ ss |: 220M8 95nt 190nt_|240nt_|300m 10% | 10mg 150 7.0 5.0p N-PE Si