NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BC639 ISSUE 1 SEPT 93 FEATURES * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Power Dissipation at Tamb=25C Ptot 800 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 80 V IC=100A, IE=0 V(BR)CEO 80 V IC=10mA, IB=0* V(BR)EBO 5 V IE=10A, IC=0 Collector Cut-Off Current ICBO 0.1 A VCB=30V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=500mA, IB=50mA* Base-Emitter Turn-on Voltage VBE(on) 1.0 V IC=500mA,VCE=2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 25 40 25 IC=5mA, VCE=2V* IC=150mA, VCE=2V* IC=500mA, VCE=2V* 160 200 MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-18 IC=50mA, VCE=2V f=100MHz