NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
* 1 Amp continuous current
*P
tot= 800 mW
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 800 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80 V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80 V IC=10mA, IB
=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=10µA, IC
=0
Collector Cut-Off Current ICBO 0.1 µAVCB
=30V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5 V IC=500mA, IB
=50mA*
Base-Emitter
Turn-on Voltage
VBE(on) 1.0 V IC=500mA,VCE=2V*
Static Forward Current
Transfer Ratio
hFE 25
40
25
160
IC=5mA, VCE=2V*
IC=150mA, VCE=2V*
IC=500mA, VCE=2V*
Transition
Frequency
fT200 MHz IC=50mA, VCE=2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BC639
3-18
E
C
B
TO92
