74VHC4051AFT,74VHC4052AFT,74VHC4053AFT CMOS Digital Integrated Circuits Silicon Monolithic 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 1. Functional Description 74VHC4051AFT:8-Channel Analog Multiplexer/Demultiplexer 74VHC4052AFT:Dual 4-Channel Analog Multiplexer/Demultiplexer 74VHC4053AFT:Triple 2-Channel Analog Multiplexer/Demultiplexer 2. General The 74VHC4051AFT, 74VHC4052AFT and 74VHC4053AFT are high-speed, low-voltage drive analog multiplexer/demultiplexers using silicon gate CMOS technology. In 3 V and 5 V systems these can achieve highspeed operation with the low power dissipation that is a feature of CMOS. The 74VHC4051AFT, 74VHC4052AFT and 74VHC4053AFT offer analog/digital signal selection as well as mixed signals. The 74VHC4051AFT has an 8-channel configuration, the 74VHC4052AFT has an 4-channel x2 configuration, and the 74VHC4053AFT has a 2-channel x3 configuration. The switches for each channel are turned ON by the control pin digital signals. All control inputs are equipped with a newly developed input protection circuit that avoids the need for a diode on the plus side (forward side from the input to the VCC). As a result, for example, 5.5 V signals can be permitted on the inputs even when the power supply voltage to the circuits is off. As a result of this input power protection, the 74VHC4051AFT, 74VHC4052AFT and 74VHC4053AFT can be used in a variety of applications, including in the system which has two power supplies, and in battery backup circuits. 3. Features (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: Topr = -40 to 125 (3) Low ON-resistance: RON = 45 (typ.) (VCC = 3.0 V) (4) Low power dissipation: ICC = 2.0 A (max) (Ta = 25C) (5) High noise immunity: VIL = 0.8 V (max) VCC =3.0 V RON = 24 (typ.) (VCC = 4.5 V) VIH = 2.0 V (min) VCC =3.0 V (6) Power down protection is provided on all control inputs. Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales representative. 4. Packaging TSSOP16B Start of commercial production (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 1 2013-06 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 5. Pin Assignment 74VHC4051AFT 74VHC4052AFT 74VHC4053AFT (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 2 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 6. Marking 74VHC4051AFT 74VHC4052AFT 74VHC4053AFT (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 3 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 7. System Diagram 74VHC4051AFT 74VHC4052AFT 74VHC4053AFT (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 4 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 8. Truth Table Input Inhibit Input C* Input B L L L L 0 0X, 0Y 0X, 0Y, 0Z L L L H 1 1X, 1Y 1X, 0Y, 0Z L L H L 2 2X, 2Y 0X, 1Y, 0Z L L H H 3 3X, 3Y 1X, 1Y, 0Z L H L L 4 0X, 0Y, 1Z L H L H 5 1X, 0Y, 1Z L H H L 6 0X, 1Y, 1Z L H H H 7 1X, 1Y, 1Z H X X X None None None X: *: Input A ON Channel ON Channel ON Channel 74VHC4051AFT 74VHC4052AFT 74VHC4053AFT Don't care Except 74VHC4052AFT 9. Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 7.0 V Input voltage VIN -0.5 to 7.0 V Switch I/O voltage VI/O -0.5 to VCC + 0.5 V Input diode current IIK -20 mA II/OK 25 mA IT 25 mA I/O diode current Switch through current VCC/ground current ICC Power dissipation PD Storage temperature Tstg (Note 1) 50 mA 180 mW -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: 180 mW in the range of Ta = -40 to 85 . From Ta = 85 to 125 a derating factor of -3.25 mW/ shall be applied until 50 mW. 10. Operating Ranges (Note) Characteristics Symbol Test Condition Rating Unit 2.0 to 5.5 V Supply voltage VCC Input voltage VIN 0 to 5.5 V Switch I/O voltage VS 0 to VCC V Operating temperature Topr Input rise and fall times dt/dv Note: -40 to 125 VCC = 2.5 0.2 V 0 to 200 ns/V VCC = 3.3 0.3 V 0 to 100 VCC = 5 0.5 V 0 to 20 The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 5 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 11. Electrical Characteristics 11.1. DC Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics High-level input voltage Low-level input voltage ON-resistance Difference of ON-resistance between switches Symbol Test Condition VCC (V) Min Typ. Max Unit VIH 2.0 1.5 V 3.0 2.0 4.5 3.15 5.5 3.85 2.0 0.5 3.0 0.8 4.5 1.35 VIL RON RON 5.5 1.65 VIN = VIH or VIL VI/O = VCC to GND II/O = 2 mA 2.3 200 3.0 45 86 4.5 24 37 VIN = VIH or VIL VI/O = VCC or GND II/O = 2 mA 2.3 28 73 3.0 22 38 4.5 17 27 VIN = VIH or VIL VI/O = VCC to GND II/O = 2 mA 2.3 10 25 3.0 5 15 4.5 5 13 V Input/Output leakage current (Switch OFF) IOFF VOS = VCC or GND VIS = GND to VCC VIN = VIH or VIL 5.5 0.1 A Input/Output leakage current (Switch ON, Output OPEN) II/O VOS = VCC or GND VIN = VIH or VIL 5.5 0.1 A Control input leakage current IIN VIN = VCC or GND 5.5 0.1 A Quiescent supply current ICC VIN = VCC or GND 5.5 2.0 A (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 6 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 11.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics High-level input voltage Low-level input voltage ON-resistance Symbol Test Condition VCC (V) Min Max Unit VIH 2.0 1.5 V 3.0 2.0 4.5 3.15 5.5 3.85 2.0 0.50 3.0 0.8 4.5 1.35 5.5 1.65 VIN = VIH or VIL VI/O = VCC to GND II/O = 2 mA 2.3 3.0 108 4.5 46 VIN = VIH or VIL VI/O = VCC or GND II/O = 2 mA 2.3 84 3.0 44 4.5 31 VIN = VIH or VIL VI/O = VCC to GND II/O = 2 mA 2.3 35 3.0 20 VIL RON V Difference of ON-resistance between switches RON 4.5 18 Input/Output leakage current (Switch OFF) IOFF VOS = VCC or GND VIS = GND to VCC VIN = VIH or VIL 5.5 1.0 A Input/Output leakage current (Switch ON, Output OPEN) II/O VOS = VCC or GND VIN = VIH or VIL 5.5 1.0 A Control input leakage current IIN VIN = VCC or GND 5.5 1.0 A Quiescent supply current ICC VIN = VCC or GND 5.5 20.0 A (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 7 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 11.3. DC Characteristics (Unless otherwise specified, Ta = -40 to 125 ) Characteristics High-level input voltage Low-level input voltage ON-resistance Symbol Test Condition VCC (V) Min Max Unit 2.0 1.5 V 3.0 2.0 4.5 3.15 5.5 3.85 2.0 0.5 3.0 0.8 4.5 1.35 5.5 1.65 VIN = VIH or VIL VI/O = VCC to GND II/O = 2 mA 2.3 3.0 125 4.5 54 VIN = VIH or VIL VI/O = VCC or GND II/O = 2 mA 2.3 105 3.0 55 4.5 39 VIN = VIH or VIL VI/O = VCC to GND II/O = 2 mA 2.3 45 3.0 25 VIH VIL RON V Difference of ON-resistance between switches RON 4.5 23 Input/Output leakage current (Switch OFF) IOFF VOS = VCC or GND VIS = GND to VCC VIN = VIH or VIL 5.5 4.0 A Input/Output leakage current (Switch ON, Output OPEN) II/O VOS = VCC or GND VIN = VIH or VIL 5.5 4.0 A Control input leakage current IIN VIN = VCC or GND 5.5 2.0 A Quiescent supply current ICC VIN = VCC or GND 5.5 40.0 A (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 8 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 11.4. AC Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 3 ns) Characteristics Part Number Phase difference between input to output Symbol Test Condition I/O VCC (V) CL (pF) Min Typ. Max Unit 2.5 0.2 15 1.2 10 ns 50 2.6 12 15 0.8 6 50 1.5 9 15 0.3 4 50 0.6 6 15 3.3 15 50 4.2 25 15 2.3 11 50 3.0 18 15 1.6 7 50 2.1 12 15 6 15 50 9.6 25 15 4.5 11 50 7.2 18 15 3.2 7 50 5.1 12 3.3 0.3 5.0 0.5 Output enable time tPZL,tPZH RL = 1 k Figure 1 2.5 0.2 3.3 0.3 5.0 0.5 Output disable time tPLZ,tPHZ RL = 1 k Figure 1 2.5 0.2 3.3 0.3 5.0 0.5 Control input capacitance Common terminal capacitance Switch terminal capacitance All types 2 pF CIS Figure 2 23.4 pF 74VHC4052AFT 13.1 74VHC4053AFT 8.2 5.7 5.6 5.6 0.5 74VHC4052AFT 0.5 74VHC4053AFT 0.5 15 24 12 74VHC4051AFT COS Figure 2 74VHC4053AFT Power dissipation capacitance ns CIN 74VHC4051AFT 74VHC4052AFT Feedthrough capacitance ns 74VHC4051AFT 74VHC4051AFT CIOS Figure 2 CPD Figure 2 (Note 1) 74VHC4052AFT 74VHC4053AFT pF pF pF Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD x VCC x fIN + ICC (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 9 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 11.5. AC Characteristics (Unless otherwise specified, Ta = -40 to 85 , Input: tr = tf = 3 ns) Characteristics Phase difference between input to output Symbol Test Condition I/O VCC (V) CL (pF) Min Max Unit 2.5 0.2 15 16 ns 50 18 15 10 50 12 15 7 50 8 15 20 50 32 15 15 50 22 15 10 50 16 15 23 50 32 15 15 50 22 15 10 50 16 10 pF 3.3 0.3 5.0 0.5 Output enable time tPZL,tPZH RL = 1 k Figure 1 2.5 0.2 3.3 0.3 5.0 0.5 Output disable time tPLZ,tPHZ RL = 1 k Figure 1 2.5 0.2 3.3 0.3 5.0 0.5 Control input capacitance CIN ns ns 11.6. AC Characteristics (Unless otherwise specified, Ta = -40 to 125 , Input: tr = tf = 3 ns) Characteristics Phase difference between input to output Symbol Test Condition I/O VCC (V) CL (pF) Min Max Unit 2.5 0.2 15 20 ns 50 22 15 13 50 14 15 9 50 9.5 15 23.5 50 37 15 18 50 25 15 12 50 19 15 28.5 50 37 15 18 50 25 15 12 50 19 10 3.3 0.3 5.0 0.5 Output enable time tPZL,tPZH RL = 1 k Figure 1 2.5 0.2 3.3 0.3 5.0 0.5 Output disable time tPLZ,tPHZ RL = 1 k Figure 1 2.5 0.2 3.3 0.3 5.0 0.5 Control input capacitance (c)2015-2018 Toshiba Electronic Devices & Storage Corporation CIN 10 ns ns pF 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 11.7. Analog Switch Characteristics (Ta = 25 ) (Note) Characteristics Part Number Sine Wave Distortion Maximum frequency response THD Test Condition RL = 10 k, CL = 50 pF fIN = 1 kHz 74VHC4051AFT fMAX(I/O) VIN is centered at (VCC/2). Adjust input for 0 dBm. 74VHC4052AFT Increase fIN frequency until dB 74VHC4053AFT meter reads -3 dB. RL = 50 , CL = 10 pF, sine 74VHC4051AFT wave 74VHC4052AFT Figure 3 74VHC4053AFT Feed through attenuation (switch OFF) Crosstalk (control input to signal output) Crosstalk (between any switches) Note: Symbol FTH Xtalk Xtalk VCC (V) Typ. Unit % VIN = 2.0 Vp-p 3.0 0.1 VIN = 4.0 Vp-p 4.5 0.03 3.0 150 MHz 200 240 4.5 180 230 280 VIN is centered at (VCC/2). Adjust input for 0 dBm. RL = 600 , CL = 50 pF, fIN = 1 MHz, sine wave Figure 4 3.0 -45 4.5 -45 VIN is centered at (VCC/2). Adjust input for 0 dBm. RL = 50 , CL = 10 pF, fIN = 1 MHz, sine wave Figure 4 3.0 -65 4.5 -65 RL = 600 , CL = 50 pF, fIN = 1 MHz, square wave (tr = tf = 6 ns) Figure 5 3.0 60 4.5 100 VIN is centered at (VCC/2). Adjust input for 0 dBm. RL = 600 , CL = 50 pF, fIN = 1 MHz, sine wave Figure 6 3.0 -45 4.5 -45 dB mV dB These characteristics are determined by design of devices. (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 11 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT 12. AC Test Circuit Figure 1 tPLZ, tPHZ, tPZL, tPZH Figure 2 CIOS, CIS, COS Figure 3 Frequency Response Figure 4 Feedthrough Attenuation (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 12 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT Figure 5 Cross Talk (control input to output signal) Figure 6 Cross Talk (between any two switches) (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 13 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT Package Dimensions Unit: mm Weight: 0.055 g (typ.) Package Name(s) Nickname: TSSOP16B (c)2015-2018 Toshiba Electronic Devices & Storage Corporation 14 2018-10-30 Rev.5.0 74VHC4051AFT,74VHC4052AFT,74VHC4053AFT RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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