1
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CAS120M12BM2
1.2kV, 13 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-Rec® Diode
Datasheet: CAS120M12BM2,Rev. -
Features
•UltraLowLoss
•High-FrequencyOperation
•ZeroReverseRecoveryCurrentfromDiode
•ZeroTurn-offTailCurrentfromMOSFET
•Normally-off,Fail-safeDeviceOperation
•EaseofParalleling
•CopperBaseplateandAluminumNitrideInsulator
System Benets
•EnablesCompactandLightweightSystems
•HighEfciencyOperation
•MitigatesOver-voltageProtection
•ReducedThermalRequirements
•ReducedSystemCost
Applications
•InductionHeating
•SolarandWindInverters
•DC/DCConverters
•LineRegenDrives
•BatteryChargers
Package 62mm x 106mm x 30mm
Maximum Ratings (TC = 25˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Notes
VDSmax Drain-SourceVoltage 1.2 kV
VGSmax Gate-SourceVoltage -10/+25 VAbsolutemaximumvalues
VGSop Gate-SourceVoltage -5/20 VRecommendedoperationalvalues
IDContinuousMOSFETDrainCurrent 193 AVGS=20V,TC=25˚C Fig.26
138 VGS=20V,TC=90˚C
ID(pulse) PulsedDrainCurrent 480 A PulsewidthtplimitedbyTJ(max)
IFContinuousDiodeForwardCurrent
305
A
VGS=-5V,TC=25˚C
195 VGS=-5V,TC=90˚C
TJmax JunctionTemperature -40to+150 ˚C
TC,TSTG CaseandStorageTemperatureRange -40to+125 ˚C
Visol CaseIsolationVoltage 5 kV AC,50Hz,1min
LStray StrayInductance 15 nH Measuredbetweenterminals2and3
PDPowerDissipation 925 W TC=25˚C,TJ=150˚C Fig.25
Part Number Package Marking
CAS120M12BM2 Half-BridgeModule CAS120M12BM2
VDS 1.2 kV
Esw, Total @ 120A, 150 ˚C 2.1 mJ
RDS(on) 13 mΩ
2CAS120M12BM2,Rev. -
Electrical Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-SourceBreakdownVoltage 1.2 kV VGS,=0V,ID=300μA
VGS(th) GateThresholdVoltage 1.8 2.6 V VDS=10V,ID=6mA Fig.7
IDSS ZeroGateVoltageDrainCurrent 80 300 μA VDS=1.2kV,VGS=0V
400 1500 VDS=1.2kV,VGS=0V,TJ=150˚C
IGSS Gate-SourceLeakageCurrent 1 100 nA VGS=20V,VDS=0V
RDS(on) OnStateResistance
13 16
mΩ
VGS=20V,IDS=120A Fig.4,
5,6
23 30 VGS=20V,IDS=120A,
TJ=150˚C
gfs Transconductance 53.8 SVDS=20V,IDS=120A Fig.8
48.5 VDS=20V,ID=120A,TJ=150˚C
Ciss InputCapacitance 6.3
nF VDS=1kV,f=200kHz,
VAC=25mV
Fig.
16,17
Coss OutputCapacitance 0.88
Crss ReverseTransferCapacitance 0.037
Eon Turn-OnSwitchingEnergy
 1.7 mJ VDD=600V,VGS=-5V/+20V
ID=120A,RG(ext)=2.5Ω
Load=142μH,TJ=150˚C
Note:IEC60747-8-4Denitions
Fig.22
EOff Turn-OffSwitchingEnergy
 0.4 mJ
RG(int) InternalGateResistance 1.8 Ω f=200kHz,VAC=25mV
QGS Gate-SourceCharge 97
nC VDD=800V,VGS=-5V/+20V,
ID=120A,PerJEDEC24pg27 Fig.15
QGD Gate-DrainCharge 118
QGTotalGateCharge 378
td(on) Turn-ondelaytime 38 ns VDD=600V,VGS=-5/+20V,
ID=120A,RG(ext)=2.5Ω,
TimingrelativetoVDS
Note:IEC60747-8-4,pg83
Inductiveload
Fig.24
trRiseTime 34 ns
td(off) Turn-offdelaytime 70 ns
tfFallTime 22 ns
VSD DiodeForwardVoltage 1.5 1.8 VIF=120A,VGS=0 Fig.10
1.9 2.4 IF=120A,TJ=150˚C,VGS=0 Fig.11
QCTotalCapacitiveCharge 1.1 μC ISD=120A,VDS=600V,TJ=
25°C,diSD/dt=3kA/μs,VGS=-5V
Additional Module Data
Symbol Parameter Max. Unit Test Condtion
W Weight 290 g
M MountingTorque 5 Nm Toheatsinkandterminals
ClearanceDistance 9mm Terminaltoterminal
CreepageDistance 30 mm Terminaltoterminal
40 mm Terminaltobaseplate
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
RthJCM ThermalResistanceJuction-to-CaseforMOSFET 0.125 0.135 ˚C/W Fig.27
RthJCD ThermalResistanceJuction-to-CaseforDiode 0.108 0.115 Fig.28
3CAS120M12BM2,Rev. -
Typical Performance
0
60
120
180
240
300
360
012345678910
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= -40 °C
tp < 200 µs
V
GS
= 20 V
V
GS
= 10 V
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V
V
GS
= 12 V
0
60
120
180
240
300
360
012345678910
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= 25 °C
tp < 200 µs
V
GS
= 20 V
V
GS
= 10 V
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V
V
GS
= 12 V
Figure2.OutputCharacteristicsTJ=25˚C
Figure1.OutputCharacteristicsTJ=-40˚C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 025 50 75 100 125 150
On Resistance, R
DS On
(P.U.)
Junction Temperature, T
J
(°C)
Conditions:
IDS = 120 A
VGS = 20 V
tp< 200 µs
0
60
120
180
240
300
360
012345678910
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= 150 °C
tp < 200 µs V
GS
= 20 V
V
GS
= 10 V
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V V
GS
= 12 V
Figure6.
On-Resistancevs.Temperature
ForVariousGate-SourceVoltage
Figure4.NormalizedOn-Resistancevs.Temperature
0
5
10
15
20
25
30
35
050 100 150 200 250 300 350
On Resistance, R
DS On
(mOhms)
Conditions:
VGS = 20 V
tp< 200 µs
TJ= 150 °C
TJ= -55 °C
TJ= 25 °C
0
5
10
15
20
25
30
-50 -25 025 50 75 100 125 150
On Resistance, R
DS On
(mOhms)
Junction Temperature, T
J
(°C)
Conditions:
IDS = 120 A
tp< 200 µs
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
Figure5.On-Resistancevs.DrainCurrent
ForVariousTemperatures
Figure3.OutputCharacteristicsTJ=150˚C
4CAS120M12BM2,Rev. -
-360
-300
-240
-180
-120
-60
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
T
J
= -40°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -5 V
V
GS
= 0 V
Typical Performance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 025 50 75 100 125 150
Threshold Voltage, Vth (V)
Junction Temperature TJ(°C)
Conditons
V
DS
= 10 V
I
DS
= 6 mA
0
40
80
120
160
200
240
0246810 12 14
Drain-Source Current, IDS (A)
Gate-Source Voltage, VGS (V)
Conditions:
V
DS
= 20 V
tp < 200 µs
T
J
= 150 °C
T
J
= -40 °C
T
J
= 25 °C
-360
-300
-240
-180
-120
-60
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J= 25°C
tp< 200 µs
VGS = -2 V
VGS = -5 V VGS = 0 V
Figure8.TransferCharacteristicforVarious
JunctionTemperatures
Figure10.
DiodeCharacteristicat25˚C
Figure9.DiodeCharacteristicat-40˚C
-360
-300
-240
-180
-120
-60
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 150°C
t
p
< 200 µs
V
GS
= -2 V
V
GS
= -5 V
V
GS
= 0 V
-360
-300
-240
-180
-120
-60
0
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 25 °C
t
p
= 200 µs
Conditions:
T
J
= -40°C
t
p
= 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 20 V
V
GS
= 15 V
V
GS
= 0 V
Figure12.3rdQuadrantCharacteristicat-40
˚
C
Figure7.ThresholdVoltagevs.Temperature
Figure11.
DiodeCharacteristicat150˚C
5CAS120M12BM2,Rev. -
-5
0
5
10
15
20
25
050 100 150 200 250 300 350 400
Gate-Source Voltage, VGS (V)
Gate Charge, QG(nC)
Conditions:
I
DS
= 120 A
I
GS
= 100 mA
V
DS
= 800 V
T
J
= 25 °C
Typical Performance
-360
-300
-240
-180
-120
-60
0
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 25 °C
t
p
= 200 µs
Conditions:
T
J
= 25°C
t
p
= 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 20 V
V
GS
= 15 V
V
GS
= 0 V
-360
-300
-240
-180
-120
-60
0
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
T
J
= 25 °C
t
p
= 200 µs
Conditions:
T
J
= 150°C
t
p
= 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 20 V
V
GS
= 15 V
V
GS
= 0 V
Figure14.
3rdQuadrantCharacteristicat150
˚
C
1
10
100
1000
10000
100000
050 100 150 200
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 200 kHz
C
rss
Figure13.
3rdQuadrantCharacteristicat25
˚
C
1
10
100
1000
10000
100000
0200 400 600 800 1000
Capacitance (pF)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:
TJ= 25 °C
VAC = 25 mV
f = 200 kHz
Crss
0
100
200
300
400
500
600
0200 400 600 800 1000 1200
Stored Energy, E
OSS
(µJ)
Drain to Source Voltage, V
DS
(V)
Figure18.
OutputCapacitorStoredEnergy
Figure15.GateChargeCharacteristics Figure16.Capacitancesvs.Drain-Source
Voltage(0-200V)
Figure17.
Capacitancesvs.Drain-Source
Voltage(0-1kV)
6CAS120M12BM2,Rev. -
Typical Performance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
040 80 120 160 200 240
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 600 V
R
G(ext)
= 2.5 Ω
V
GS
= -5/+20 V
L = 142 μH
Figure19.InductiveSwitchingEnergyvs.
DrainCurrentForVDS=600V,RG=2.5Ω
Figure20.InductiveSwitchingEnergyvs.
DrainCurrentForVDS=800V,RG=2.5Ω
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35 40 45
Switching Loss (mJ)
External Gate Resistor R
G
(ext) (Ohms)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 600 V
I
DS
=120 A
V
GS
= -5/+20 V
L = 142 μH
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
040 80 120 160 200 240
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 800 V
R
G(ext)
= 2.5 Ω
V
GS
= -5/+20 V
L = 142 μH
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
025 50 75 100 125 150 175
Switching Loss (mJ)
Junction Temperature, T
J
(°C)
E
Off
E
On
E
Total
Conditions:
V
DD
= 600 V
R
G(ext)
= 2.5 Ω
I
DS
=120 A
V
GS
= -5/+20 V
L = 142 μH
Figure22.InductiveSwitchingEnergyvs.TemperatureFigure21.InductiveSwitchingEnergyvs.RG(ext)
0
50
100
150
200
250
300
350
400
450
500
0 5 10 15 20 25 30 35 40
Time (ns)
External Gate Resistor, R
G(ext)
(Ohms)
Conditions:
T
J
= 25 °C
V
DD
= 600 V
I
DS
= 120 A
V
GS
= -5/+20 V
t
d (off)
t
d (on)
t
f
t
r
Figure23.Timingvs.RG(ext) Figure24.ResistiveSwitchingTimeDescription
7CAS120M12BM2,Rev. -
Typical Performance
100E-6
1E-3
10E-3
100E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
0
50
100
150
200
250
-40 -20 020 40 60 80 100 120 140
Drain-Source Continous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 150 °C
100E-6
1E-3
10E-3
100E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Junction To Case Impedance, ZthJC (oC/W)
Time, tp(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Figure27.MOSFETJunctiontoCaseThermalImpedance Figure28.DiodeJunctiontoCaseThermalImpedance
0
100
200
300
400
500
600
700
800
900
1000
-40 -20 020 40 60 80 100 120 140
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Conditions:
TJ≤ 150 °C
Figure25.MaximumPowerDissipation(MOSFET)
Deratingvs.CaseTemperature
Figure26.ContinousDrainCurrent(MOSFET)
DeratingvsCaseTemperature
Figure29.MaximumPowerDissipation(MOSFET)Derat-
ingvs.CaseTemperature
0.01
0.10
1.00
10.00
100.00
1000.00
0.1 110 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
1 ms
10 µs
Conditions:
T
C
= 25 °C
D = 0,
Parameter: t
p
100 ms
Limited by R
DS On
8CAS120M12BM2,Rev. -
Schematic
Package Dimensions (mm)
CAS120M12BM2
Module Application Note:
TheSiCMOSFETmoduleswitchesatspeedsbeyondwhatiscustomarilyassociatedwithIGBTbasedmodules.
Therefore,specialprecautionsarerequiredtorealizethebestperformance.Theinterconnectionbetweenthegate
driverandmodulehousingneedstobeasshortaspossible.Thiswillaffordthebestswitchingtimeandavoidthe
potentialfordeviceoscillation.Also,greatcareisrequiredtoinsureminimuminductancebetweenthemoduleand
linkcapacitorstoavoidexcessiveVDSovershoots.
PleaseRefertoapplicationnote:DesignConsiderationswhenusingCreeSiCModulesPart1andPart2.
[CPWR-AN12,CPWR-AN13]
99 CAS120M12BM2 Rev. -
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• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,airtrafccontrolsystems.
Notes
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