HIRF630 - Hi-Sincerity Mocroelectronics Corp.

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6732-A

Issued Date : 1998.07.01

Revised Date : 1999. 08.01

Page No. : 1/5

HSMC Product Specifi cation

HIRF630

N - Channel MOSFETs

Description

Dynamic dv / dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Re quirements

This N - Channel MOSFETs provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

Absolute Maximum Ratings (Ta=25 °C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temp eratur e..................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 74 W

• Maximum Voltages and Currents (Tc=25°C)

Drain To Source Breakdown Voltage................................................................................ 200 V

Gate To Source Voltage................................................................................................... ± 20 V

Continuous Source Current.................................................................................................. 9 A

Pulsed Drain Current.......................................................................................................... 36 A

Characteristics (Ta=25°C)

Symbol Parameter Max. Units

ID Tc=25°CContinu ous Drai n C urr ent, VGS at 10V 9 A

EAS Singl e Pulse Av alanche Ener g y (1) 250 mJ

IAR Avalanche Current (2) 9 A

EAR Repetitive Avalanche Energy (2) 7.4 mJ

dv / dt Peak Diode Recovery dv / dt (3) 5 V / ns

Note : VDD=50V, starting TJ=25°C, L=4.6mH, RQ=25Ω, IAS=9A

Repetitive rating; width limited by max. Junction temperature. ISD≤9A, di/dt≤120A / us, VDD≤V(BR)DSS, TJ≤150°C

Thermal Resistance

Symbol Parameter Min. Typ. Max. Units

RθJC Junction to Case - - 1.7

RθCS Case to Sink, Flat, Greased Surface - 0.5 -

RθJA Junction to Ambient - - 62 °C/W

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6732-A

Issued Date : 1998.07.01

Revised Date : 1999. 08.01

Page No. : 2/5

HSMC Product Specifi cation

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

V(BR)DSS 200 - - V ID=100uA

VGS(th) 2 - 4 V VDS=4V, ID=250uA

IDSS - - 25 uA VDS=200V

IGSS - - 100 nA VGS=20V

IGSS - - -100 nA VGS=-20V

Qg - - 40 nC ID=10A

Qgs - - 8 nC VDS=200V

Qgd - - 10 nC VGS=10V

ton - 200 - nS VDD=100V

td(off) - 90 - nS ID=5A

tf - 60 - nS VGS=10V

VDS(on) - - 2 V ID=5.0A, VG = 10V

ID(on) 9 - - A VDS=10V, VGS=10V

RDS(on) - - 0.4 ΩVGS=10V, ID = 5.4A

Ciss - 800 - pF VGS=0V

Coss - 240 - pF VDS=25V

Crss - 90 - pF f=1MHz

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6732-A

Issued Date : 1998.07.01

Revised Date : 1999. 08.01

Page No. : 3/5

HSMC Product Specifi cation

Characteristics Curve

On-Region C haracteristic

0246810

Drain-Source Voltage (V)

Dr a in-S our c e Cur rent (A)

VGS=10

Drain Current Variation w ith Gate Voltage &

Temperature

02468

G at e - Source Voltag e ( V)

Dr a in-S our c e Cur rent (A)

TJ=125°C

TJ=25°C

Capacitance Characteristics

500

1000

1500

2000

2500

3000

0 1020304050

Drain-Source Voltage (V)

Cap a c itance (pF)

Ciss

Crss Coss

Transconductance Variation with Drain Current

& Temperature

0246810

Dr a in Cur r e nt (A)

gFS,Transconductance (S)

TJ= 25°C

TJ=125°C

Body Diode Forw ard Volta ge Variation with

Cur rent & Temperature

0.2 0.4 0.6 0.8 1 1.2

Body Diode For ward Voltag e ( V)

Rev erse Drain Curr ent (A)

TJ= 25°C

On Resistance Variation with Temperature

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

25 50 75 100 125 150

Junction Temperature (ºC)

N or malized Drain- Source On - Resist ance

ID= 3.5 A

VGS= 10 V

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6732-A

Issued Date : 1998.07.01

Revised Date : 1999. 08.01

Page No. : 4/5

HSMC Product Specifi cation

Breakdown Voltage Variation with Tem pera ture

0.98

1.00

1.02

1.04

1.06

1.08

1.10

1.12

1.14

1.16

25 50 75 100 125 150

Junction Temperature (°C)

N or malized Drain- Source Br ea kdown

Voltage

ID=250 uA

Ma ximum Sa fe Oper atin g Ar ea

100

0.1 110 100 1000

Drain-Source Voltage (V)

Drain-Source Current (A)

RDS(on) Line

100ms

10ms

1ms

100us

VGS=10 V

Single Pulse

TC=25°C

Transient Thermal Response Curve

0.01

0.10

1.00

0.01 0.1 1 10 100 1000

Time (ms)

r(t) Normalized Effective Transient Thermal

Resistance

0.01

0.1

0.05

0.02

0.2

0.5

Single Pulse

RθJC(t) = r(t) * RθJC(t)

RθJC =1.7 °C / W

P(pk) t1

TJ-TC=P* RθJC(t)

Duty Cycle,D=t1/t2

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6732-A

Issued Date : 1998.07.01

Revised Date : 1999. 08.01

Page No. : 5/5

HSMC Product Specifi cation

TO-220AB Dimension

*:Typical

Inches Millimeters Inches Millimeters

DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.

A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83

B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95

C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40

D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54

E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27

G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87

H - *0.6398 - *16.25

Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.

2.Controll i ng dimens ion : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thick ness of base material .

4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy res i n f amily, flammability solid burning class:UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its produc ts without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.

Head Office And Factory :

• Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-S han N. Rd. Taipei Taiwan R.O.C.

Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454

• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsi n-Chu Taiwan. R.O.C

Tel : 886-3-5983621~5 Fax : 886-3-5982931

• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hs i n-Chu Taiwan. R.O.C

Tel : 886-3-5977061 Fax : 886-3-5979220

A B

Style : Pin 1.Gate 2.Drain 3. Sour ce

3-Lead TO-220AB Plastic Package

HSMC Package Code : E

Marking :

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