LTC5533 300MHz to 11GHz Precision Dual RF Power Detector U DESCRIPTIO FEATURES Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz* Wide Input Power Range: -32dBm to 12dBm Buffered Detector Outputs with Gain of 2x Adjustable VOUT Starting Voltage Wide VCC Range of 2.7V to 6V Low Operating Current: <500A/Channel Low Shutdown Current: <2A/Channel 4mm x 3mm DFN Package U APPLICATIO S The LTC(R)5533 is a dual channel RF power detector for RF applications operating in the 300MHz to 11GHz range. Two independent temperature compensated Schottky diode peak detectors and buffer amplifiers are combined in a small 4mm x 3mm DFN package. The RF input voltage is peak detected using on-chip Schottky diodes. The detected voltage is buffered and supplied to the VOUT pins. A power saving shutdown mode reduces current to less than 2A/channel. The initial output starting voltages can be precisely adjusted using the VOS pins. The LTC5533 operates with input power levels from -32dBm to 12dBm. , LTC and LT are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. *Higher frequency operation is achievable with reduced performance. Consult factory for more information. PA Forward and Reverse Power Monitor Dual PA Transmit Power Control 802.11a, b, g, 802.15, WiMAX PA Linearization Fixed Wireless Access RF Power Alarm Envelope Detector U TYPICAL APPLICATIO Output Voltage vs RF Input Power 300MHz to 11GHz RF Power Detectors 3600 VCC VCC1 100pF VOS1 0.1F 100pF VOS2 GND1 VOS1 SHDN1 VCC2 RFIN2 VOUT2 GND2 39pF RF2 INPUT SHDN2 DISABLE ENABLE 5533 TA01 (EXPOSED PAD) 3200 RF1 INPUT RFIN1 VOUT1 VOS2 39pF VOUT OUTPUT VOLTAGE (mV) LTC5533 2800 2400 2000 1600 1200 VCC = 3.6V VOS = 0V TA = 25C 4GHz 1GHz 5GHz 500MHz 6GHz 8GHz 11GHz 800 400 10GHz 9GHz 0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12 5533 TA02 5533f 1 LTC5533 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) VCC1, VCC2, VOUT1, VOUT2, VOS1, VOS2 ....... -0.3V to 6.5V RFIN1, RFIN2 Voltage ........................(VCC 1.25V) to 7V RFIN1, RFIN2 Power (RMS) ................................. 12dBm SHDN1, SHDN2 Voltage to GND .. -0.3V to (VCC + 0.3V) IVOUT1, IVOUT2 ........................................................ 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C ORDER PART NUMBER TOP VIEW VCC1 1 12 RFIN1 VOUT1 2 11 GND1 VOS1 3 VCC2 4 9 RFIN2 VOUT2 5 8 GND2 VOS2 6 7 SHDN2 LTC5533EDE 10 SHDN1 13 DFN PART MARKING DE12 PACKAGE 12-LEAD (4mm x 3mm) PLASTIC DFN TJMAX = 125C, JA = 40C/W EXPOSED PAD IS GND (PIN 13) MUST BE SOLDERED TO PCB 5533 Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off, VOS = 0V and SHDN = HI unless otherwise noted. Limits below are for one channel unless otherwise noted. PARAMETER CONDITIONS MIN VCC Operating Voltage TYP MAX 0.45 0.7 2.7 6 UNITS V IVCC Operating Current IVOUT = 0mA IVCC Shutdown Current SHDN = LO 0.01 2 A VOUT Start Voltage (No RF Input) RLOAD = 2k, VOS = 0V SHDN = LO 85 110 to 150 1 170 mV mV VOUT Output Current VOUT = 1.75V, VCC = 2.7V, VOUT < 10mV 2 4 VOUT Enable Time SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k VOUT Bandwidth CLOAD = 33pF, RLOAD = 2k (Note 4) VOUT Load Capacitance (Note 6) 8 mA 20 2 mA s MHz 33 pF VOUT Slew Rate VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) 3 V/s VOUT Noise VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination 1 mVP-P VOUT Shutdown Resistance Resistance Measured to Ground 280 VOS Voltage Range 0 -0.5 VOS Input Current VOS = 1V SHDN Voltage, Chip Disabled VCC = 2.7V to 6V SHDN Voltage, Chip Enabled VCC = 2.7V to 6V SHDN Input Current SHDN = 3.6V RFIN Input Frequency Range RFIN Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V 1 V 0.5 A 0.35 V 36 A 1.4 V 22 300 to 11000 MHz -32 to 12 dBm RFIN AC Input Resistance f = 1000MHz, Pin = -25dBm 220 RFIN Input Shunt Capacitance f = 1000MHz, Pin = -25dBm 0.65 pF Channel to Channel Isolation f = 2GHz 45 dB Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. Note 4: Bandwidth is calculated based on the 10% to 90% rise time equation: BW = 0.35/rise time. Note 5: RF performance is production tested at 1800MHz Note 6: Guaranteed by design. 5533f 2 LTC5533 U W TYPICAL PERFOR A CE CHARACTERISTICS (For one channel. SHDN = VCC, unless otherwise specified.) 140 500 135 480 3.0 TA = 85C TA = 25C 130 TA = -40C 125 SHUTDOWN CURRENT (nA) 2.5 TA = -40C 460 TA = 25C TA = 85C 440 2.0 1.5 1.0 TA = 25C 5 3.5 4 4.5 SUPPLY VOLTAGE (V) 5.5 6 2.5 3 5 3.5 4 4.5 SUPPLY VOLTAGE (V) 5.5 3600 VOUT OUTPUT VOLTAGE (mV) 3200 TA = -40C 2400 TA = 25C 2000 1600 1200 TA = 85C 800 400 3600 VCC = 3.6V VOS = 0V 3200 2800 TA = -40C 2400 2000 TA = 25C 1600 1200 TA = 85C 800 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12 2400 TA = 25C 2000 1600 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) VOUT OUTPUT VOLTAGE (mV) 3200 TA = -40C 5533 G07 TA = 25C 2000 1600 1200 TA = 85C 800 2400 2000 Typical Detector Characteristics, 7GHz 3600 3200 2800 TA = -40C TA = 25C 1600 1200 800 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 5533 G08 VCC = 3.6V VOS = 0V 2800 2400 TA = -40C 2000 1600 TA = 25C 1200 800 400 8 12 8 12 5533 G06 VCC = 3.6V VOS = 0V 400 8 12 TA = -40C 2400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12 VOUT OUTPUT VOLTAGE (mV) 3600 2800 2800 Typical Detector Characteristics, 5GHz VCC = 3.6V VOS = 0V 6 VCC = 3.6V VOS = 0V 5533 G05 Typical Detector Characteristics, 3GHz 3200 5.5 400 5533 G04 3600 4.5 4 5 3.5 SUPPLY VOLTAGE (V) Typical Detector Characteristics, 2GHz 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 3 5533 G03 Typical Detector Characteristics, 1GHz VCC = 3.6V VOS = 0V 2800 TA = -40C 5533 G02 Typical Detector Characteristics, 300MHz 3600 6 VOUT OUTPUT VOLTAGE (mV) 3 5533 G01 3200 0 2.5 420 2.5 VOUT OUTPUT VOLTAGE (mV) TA = 85C 0.5 120 VOUT OUTPUT VOLTAGE (mV) Shutdown Current vs Supply Voltage (RF Input Signal Off, VOS = 0V, SHDN = 0V) Supply Current vs Supply Voltage (RF Input Signal Off, VOS = 0V) SUPPLY CURRENT (A) VOUT OUTPUT VOLTAGE (mV) Output Starting Voltage vs Supply Voltage (RF Input Signal Off, VOS = 0V) TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12 5533 G09 5533f 3 LTC5533 U W TYPICAL PERFOR A CE CHARACTERISTICS (For one channel. SHDN = VCC, unless otherwise specified.) 1000 VCC = 3.6V VOS = 0V VOUT SLOPE (mV/dB) 100 TA = -40C TA = 85C TA = 25C 1 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 1000 VCC = 3.6V VOS = 0V 100 TA = -40C TA = 85C 10 4 VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) 1000 VCC = 3.6V VOS = 0V TA = -40C TA = 85C 10 TA = 25C 4 TA = -40C TA = 85C 10 2 VOUT VARIATION (dB) VOUT VARIATION (dB) 100 TA = -40C TA = 85C 10 TA = 25C 4 TA = -40C TA = 85C 1 6 3 2 TA = -40C TA = 85C 5533 G16 -3 -30 -26 -22 -18 -14 -10 -6 -2 RF INPUT POWER (dBm) 8 5533 G15 VCC = 3.6V VOS = 0V 0 -1 4 VOUT Variation Relative to 25C vs RF Input Power at 2GHz -2 -2 2 1 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 VOUT Variation Relative to 25C vs RF Input Power at 1GHz 3 -3 -30 -26 -22 -18 -14 -10 -6 -2 RF INPUT POWER (dBm) VCC = 3.6V VOS = 0V 5533 G14 VCC = 3.6V VOS = 0V 8 VOUT Slope vs RF Input Power at 7GHz 1000 1 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 4 5533 G12 TA = 25C 0 -1 1 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 100 VOUT Variation Relative to 25C vs RF Input Power at 300MHz 1 4 VCC = 3.6V VOS = 0V 5533 G13 2 TA = 85C 10 VOUT Slope vs RF Input Power at 5GHz 100 3 TA = -40C 5533 G11 VOUT Slope vs RF Input Power at 3GHz 1 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 100 TA = 25C 1 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 5533 G10 1000 VCC = 3.6V VOS = 0V TA = 25C VOUT SLOPE (mV/dB) 10 VOUT Slope vs RF Input Power at 2GHz VOUT VARIATION (dB) VOUT SLOPE (mV/dB) 1000 VOUT Slope vs RF Input Power at 1GHz VOUT SLOPE (mV/dB) VOUT Slope vs RF Input Power at 300MHz 1 VCC = 3.6V VOS = 0V TA = -40C 0 -1 TA = 85C -2 2 6 5533 G17 -3 -30 -26 -22 -18 -14 -10 -6 -2 RF INPUT POWER (dBm) 2 6 5533 G18 5533f 4 LTC5533 U W TYPICAL PERFOR A CE CHARACTERISTICS (For one channel. SHDN = VCC, unless otherwise specified.) VOUT Variation Relative to 25C vs RF Input Power at 3GHz 0 -1 TA = 85C -2 3 VCC = 3.6V VOS = 0V 2 TA = -40C 1 2 TA = -40C 1 0 -1 TA = 85C 2 -3 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 6 5533 G19 10 5 4 -1 TA = 85C -3 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm) 8 20 5500 15 10 5 10 VOUT vs RF Input Power and VCC Supply Voltage, fRF = 2GHz 6000 VCC = 3.6V VOS = 0V TA = 25C 6 5533 G21 VOUT OUTPUT VOLTAGE (mV) 25 15 0 Example VOUT1 - VOUT2 Mismatch with -14dBm RF Signal Input at 1.8GHz PERCENTAGE DISTRIBUTION (%) PERCENTAGE DISTRIBUTION (%) 20 TA = -40C 1 5533 G20 Example VOUT1 - VOUT2 Mismatch with No RF Signal Input VCC = 3.6V VOS = 0V TA = 25C VCC = 3.6V VOS = 0V -2 -2 -3 -30 -26 -22 -18 -14 -10 -6 -2 RF INPUT POWER (dBm) 25 VOUT Variation Relative to 25C vs RF Input Power at 7GHz VOUT VARIATION (dB) VOUT VARIATION (dB) 2 3 VCC = 3.6V VOS = 0V VOUT VARIATION (dB) 3 VOUT Variation Relative to 25C vs RF Input Power at 5GHz VOS = 0V TA = 25C VCC = 6V VCC = 5V 5000 4500 VCC = 4V 4000 3500 VCC = 3V 3000 2500 2000 1500 1000 500 0 -25 -20 -15 -10 -5 0 5 10 15 20 25 VOUT1 - VOUT2 MISMATCH (mV) VOUT vs RF Input Power and VOS, fRF = 2GHz VOUT OUTPUT VOLTAGE (mV) 3200 Channel-to-Channel Isolation vs RF Input Frequency VCC = 3.6V TA = 25C CH. 2 ISOLATION (dB) VOS = 1V VOS = 0.75V VOS = 0.5V 1200 800 400 1000 CH. 1 -30 2000 1600 Output Delay vs RF Input Power 900 2800 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) -40 CH. 1 8 12 5533 G25 CH. 2 -50 VCC = 3.6V VOS = 0V TA = 25C RF PIN = +10dBm -60 -70 VCC = 3.6V VOS = 0V TA = 25C 800 VOS = 0V VOS = 0.25V 12 5533 G24 -20 2400 8 5533 G23 5533 G22 3600 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) -1 -0.8-0.6-0.4-0.2 0 0.2 0.4 0.6 0.8 1 VOUT1 - VOUT2 MISMATCH (dB) OUTPUT DELAY (ns) 0 0 700 600 500 400 90% SWITCHING 300 200 50% SWITCHING 2000 4000 6000 8000 10000 12000 RF INPUT FREQUENCY (MHz) 5533 G26 100 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 8 5533 G27 5533f 5 LTC5533 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 290.45 -136.22 0.50 234.41 -162.54 0.70 178.25 -170.53 0.90 137.31 -159.89 1.10 109.17 -147.57 1.30 86.30 -136.18 1.50 68.65 -121.74 1.70 57.48 -107.60 1.90 49.79 - 96.72 2.10 43.56 - 86.70 2.30 38.67 -77.91 2.50 34.82 -70.13 2.70 31.68 - 62.86 2.90 29.13 - 56.01 3.10 27.17 - 49.83 3.30 25.73 - 44.24 3.50 24.56 - 39.74 3.70 23.18 - 35.35 3.90 22.31 - 30.62 4.10 20.73 -26.88 4.30 19.88 -22.31 4.50 19.40 -18.23 4.70 19.05 -14.25 4.90 19.08 -10.21 5.10 19.55 - 6.30 5.30 20.85 - 2.84 5.50 21.94 -1.49 5.70 20.60 - 0.07 5.90 19.29 2.99 6.10 18.69 6.61 6.30 18.53 10.39 6.50 18.74 14.35 6.70 19.79 17.91 6.90 19.75 20.77 7.00 19.99 22.47 S11 Forward Reflection Impedance 0.3000GHz-7.000GHz 5508 TA03 5533f 6 LTC5533 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 216.45 -76.47 0.50 190.63 -98.28 0.70 161.98 -112.03 0.90 133.17 -111.53 1.10 113.08 -109.05 1.30 94.55 -107.08 1.50 75.33 - 98.50 1.70 63.52 - 88.19 1.90 55.19 - 80.05 2.10 48.64 -72.23 2.30 43.73 - 64.81 2.50 39.71 - 58.31 2.70 36.47 - 52.27 2.90 33.69 - 46.77 3.10 31.61 - 41.25 3.30 29.78 -36.61 3.50 28.27 -32.39 3.70 26.63 -28.12 3.90 26.12 -23.97 4.10 24.20 -20.75 4.30 23.28 -16.69 4.50 22.60 -12.77 4.70 22.21 - 9.08 4.90 22.15 -5.24 5.10 22.61 -1.58 5.30 23.90 1.53 5.50 24.97 2.62 5.70 23.51 4.00 5.90 22.25 6.94 6.10 21.57 10.62 6.30 21.43 14.02 6.50 21.69 17.77 6.70 22.68 21.24 6.90 22.81 24.21 7.00 23.07 25.56 S11 Forward Reflection Impedance 0.3000GHz-7.000GHz 5508 TA04 5533f 7 LTC5533 U U U PI FU CTIO S VCC1, VCC2 (Pins 1, 4): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors. has an internal 160k pulldown resistor to ensure that the detector is shutdown when no SHDN input is applied. In shutdown VOUT is connected to ground via a 280 resistor. Channels can be shut down independently. VOUT1, VOUT2 (Pins 2, 5): Detector Outputs. GND1, GND2 (Pins 11, 8): Ground. VOS1, VOS2 (Pins 3, 6): VOUT Offset Voltage Adjustments. These pins adjust the starting VOUT voltage when no RF signal is present. For VOS from 0V to 130mV, VOUT is unaffected by VOS. For VOS > 130mV, VOUT is the sum of VOS plus the detected RF signal. RFIN1, RFIN2 (Pins 12, 9): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. These pins have internal 500 terminations, Schottky diode detectors and peak detector capacitors. SHDN1, SHDN2 (Pin 10, 7): Shutdown Inputs. A logic low on the SHDN pin places the corresponding detector in shutdown mode. A logic high enables the detector. SHDN W BLOCK DIAGRA Exposed Pad (Pin13): Ground. (One Channel) RFSOURCE 12pF TO 200pF (DEPENDING ON APPLICATION) VCC ONE CHANNEL SD + BIAS BUFFER SD VOUT - 500 30k RFIN 500 30k 180 100 SD 31k + 25pF RF DET 24k SD 50A GND + 80k VOS - - 80k 50A 120mV + 160k 5531 BD SHDN 5533f 8 LTC5533 U W U U APPLICATIO S I FOR ATIO Operation span the input range of a variety of analog-to-digital converters. VOUT will not change until VOS exceeds 130mV. The voltage at VOUT for VOS >130mV and with no RF signal present is: The LTC5533 contains two RF detector dice in one package forming two independent RF detector channels. Each channel provides RF power detection over frequencies ranging from 300MHz to 11GHz. Channel functions include an internal frequency compensated buffer amplifier with the gain set to 2x, an RF Schottky diode peak detector and level shift amplifier to convert the RF input signal to low frequency and a delay circuit to avoid voltage transients at VOUT when powering up. The LTC5533 has both shutdown and starting voltage adjustment capabilities. VOUT = VOS VOUT will track VOS above 130mV. RF Detectors The internal RF Schottky diode peak detectors and level shift amplifiers convert the RF input signals to a low frequency signal. The detectors demonstrate excellent efficiency and linearity over a wide range of input power. The Schottky diodes are biased at about 55A and drive 25pF internal peak detector capacitors. Buffer Amplifiers The output buffer amplifiers are capable of supplying typically 4mA into a load. These amplifiers have bandwidths of 2MHz and a fixed internal gain of two. Applications The VOS inputs control the DC input voltages to the buffer amplifiers. VOS must be connected to ground if the DC output voltage is not to be changed. The buffers are initially trimmed to approximately 130mV with VOS connected to ground. The LTC5533 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -32dBm to 12dBm for frequencies from 300MHz to 11GHz. Operation at higher frequencies is achievable with reduced performance. Consult factory for more information. Figure 1 plots the output voltage as a function of RF input power of an 11GHz CW input signal. The VOS pins are used to change the initial VOUT starting voltage. This function enables the LTC5533 outputs to Demo Board Schematic VCC1 2.7V TO 6V C1 0.1F VOUT1 C4 OPT VOS1 VCC2 2.7V TO 6V VOUT2 VOS2 C2 100pF SHDN1 1 2 C5 OPT 3 4 C7 0.1F C8 100pF C9 OPT C3 39pF LTC5533 5 6 VCC1 RFIN1 VOUT1 GND VOS1 SHDN1 VCC2 RFIN2 VOUT2 GND VOS2 SHDN2 13 12 11 10 C6 39pF R1 OPT 9 8 R2 OPT 7 J1 RFIN1 J2 RFIN2 5533 BD SHDN2 C10 OPT 5533f 9 LTC5533 U W U U APPLICATIO S I FOR ATIO 3600 VOUT OUTPUT VOLTAGE (mV) 3200 Figure 2 shows the corresponding slope of the 11GHz response, and Figure 3 shows the variation of the output voltage vs RF input power at -40C and 85C, normalized to the room temperature (25C) results. VCC = 3.6V VOS = 0V 2800 2400 2000 1600 TA = -40C 1200 TA = 25C 800 400 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 8 12 RF INPUT POWER (dBm) 5533 F01 Figure 1. Typical Detector Characteristics, 11GHz VOUT SLOPE (mV/dB) 1000 TA = -40C TA = 85C TA = 25C 1 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) The LTC5533 can also be used for RF power detection and control. Figure 4 is an example of an LTC5533 used for dual band mobile phone transmitter power control. The LTC5533 consists of two separate RF detector dice packaged together. Consequently, detector-to-detector isolation is good--typically 45dB at 2GHz. Output matching is good, but not precise. The characterization plots in the Typical Performance Characteristics show that the typical output voltage mismatch is within 25mV with no RF input signal present. With -14dBm RF input signal, the typical equivalent mismatch is within 1dB. VCC = 3.6V VOS = 0V 100 10 The LTC5533 can be used as a demodulator for AM and ASK modulated signals with data rates up to 2MHz. Depending on specific application needs, the detector outputs can be split between two branches, providing ACcoupled data (or audio) output and a DC-coupled RSSI output for signal strength measurements and AGC. 4 8 5533 F02 Figure 2. VOUT Slope vs RF Input Power at 11GHz 2 VCC = 3.6V VOS = 0V 2 3 4 VOUT VARIATION (dB) 5 1 TA = -40C 20dB RESISTIVE TAP Li-Ion C1 39pF LTC5533 1 3 + C3 0.1F 6 VCC1 RFIN1 VOUT1 GND VOS1 SHDN1 VCC2 RFIN2 VOUT2 GND VOS2 SHDN2 12 ANTENNA R1 360 11 10 14dB RESISTIVE TAP 9 8 7 0 C2 39pF R2 150 CELL BAND DIPLEXER -1 TA = 85C PCS BAND -2 -3 4 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 12 MOBILE PHONE BB/DSP VPC 5533 F04 BSE 5533 F03 Figure 3. VOUT Variation at -40C and at 85C vs RF Input Power at 11GHz, Normalized to Room Temperature (25C) Results. Tx PA MODULE Figure 4. Dual Band Mobile Phone Transmitter Power Contol with LTC5533 5533f 10 LTC5533 U PACKAGE DESCRIPTIO DE Package 12-Lead Plastic DFN (4mm x 3mm) (Reference LTC DWG # 05-08-1695) 0.65 0.05 3.50 0.05 1.70 0.05 2.20 0.05 (2 SIDES) PACKAGE OUTLINE 0.25 0.05 3.30 0.05 (2 SIDES) 0.50 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS 4.00 0.10 (2 SIDES) 7 R = 0.115 TYP 0.38 0.10 12 R = 0.20 TYP PIN 1 TOP MARK (NOTE 6) 3.00 0.10 (2 SIDES) 1.70 0.10 (2 SIDES) PIN 1 NOTCH (UE12/DE12) DFN 0603 0.200 REF 0.75 0.05 0.00 - 0.05 6 0.25 0.05 3.30 0.10 (2 SIDES) 1 0.50 BSC BOTTOM VIEW--EXPOSED PAD NOTE: 1. DRAWING PROPOSED TO BE A VARIATION OF VERSION (WGED) IN JEDEC PACKAGE OUTLINE M0-229 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 5533f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LTC5533 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT(R)5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer LT5514 Ultralow Distortion, IF Amplifier/ADC Driver with Digitally Controlled Gain 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Direct Conversion Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3, 50 Single Ended RF and LO Ports LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, 50 Single Ended RF and LO Ports LT5521 3.7GHz Very High Linearity Mixer 24.2dBm IIP3 at 1.95GHz, 12.5dB NF, -42dBm LO Leakage LT5522 600MHz to 2.7GHz High Linearity Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports LT5524 Low Power, Low Distortion ADC Driver with Digitally Programmable Gain 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control Range LT5525 0.9GHz to 2.5GHz High Linearity, Low Power Downconverting Mixer 17.6dBm IIP3 at 1.9GHz, On-Chip 50 RF and LO Matching, ICC = 28mA LT5526 Broadband High Linearity, Low Power Downconverting Mixer 16.5dBm IIP3 at 0.9GHz, 11dB NF at 0.9GHz, ICC = 28mA LT5528 1.6GHz to 2.45GHz High Linearity Direct Quadrature Modulator 21.8dBm OIP3 at 2GHz, -159dBm/Hz, Noise Floor, All Ports 50 Matched, Single-Ended RF and LO Ports Infrastructure RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC5505 300MHz to 3GHz RF Power Detectors LTC5505-1: -28dBm to 18dBm Range, LTC5505-2: -32dBm to 12dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector -34dBm to 14dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector -32dBm to 12dBm Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package LTC5530 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown and Adjustable Gain LTC5531 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown and Adjustable Offset LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset LT5534 50MHz to 3GHz RF Power Detector 60dB Dynamic Range, Temperature Compensated, SC70 Package LTC5535 300MHz to 7GHz Precision RF Detector with 12MHz Amplifier Precision VOUT Offset Control, Adjustable Gain and Offset LTC5536 600MHz to 7GHz Precision RF Detector With Fast Comparator Output -26dBm to 12dBm Range, 2mA Supply Current at 2V to 6V Supply, Latch Enable Output RF Power Controllers LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4402 Multiband RF Power Controller Multiband GSM/GPRS/EDGE Mobile Phones LTC4402-1: Single Channel Output Control LTC4402-2: Dual Channel Output Control LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW 5533f 12 Linear Technology Corporation LT/TP 0105 1K * PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com (c) LINEAR TECHNOLOGY CORPORATION 2005