LTC5533
1
5533f
APPLICATIO S
U
FEATURES
TYPICAL APPLICATIO
U
DESCRIPTIO
U
■
PA Forward and Reverse Power Monitor
■
Dual PA Transmit Power Control
■
802.11a, b, g, 802.15, WiMAX
■
PA Linearization
■
Fixed Wireless Access
■
RF Power Alarm
■
Envelope Detector
■
Two Independent Temperature Compensated
Schottky Diode RF Peak Detectors
■
45dB Channel-to-Channel Isolation at 2GHz
■
Wide Input Frequency Range: 300MHz to 11GHz*
■
Wide Input Power Range: –32dBm to 12dBm
■
Buffered Detector Outputs with Gain of 2x
■
Adjustable V
OUT
Starting Voltage
■
Wide V
CC
Range of 2.7V to 6V
■
Low Operating Current: <500µA/Channel
■
Low Shutdown Current: <2µA/Channel
■
4mm × 3mm DFN Package
300MHz to 11GHz Precision
Dual RF Power Detector
The LTC
®
5533 is a dual channel RF power detector for RF
applications operating in the 300MHz to 11GHz range.
Two independent temperature compensated Schottky di-
ode peak detectors and buffer amplifiers are combined in
a small 4mm × 3mm DFN package.
The RF input voltage is peak detected using on-chip
Schottky diodes. The detected voltage is buffered and
supplied to the V
OUT
pins. A power saving shutdown mode
reduces current to less than 2µA/channel. The initial
output starting voltages can be precisely adjusted using
the V
OS
pins.
The LTC5533 operates with input power levels from
–32dBm to 12dBm.
300MHz to 11GHz RF Power Detectors
RF1 INPUT
100pF
100pF
0.1µF
39pF
39pF
V
CC
RF2 INPUT
(EXPOSED PAD)
V
OS2
V
OS1
DISABLE ENABLE
LTC5533
V
CC1
V
OUT1
V
OS1
V
CC2
V
OUT2
V
OS2
5533 TA01
SHDN2
SHDN1
GND2
RF
IN2
GND1
RF
IN1
Output Voltage vs RF Input Power
RF INPUT POWER (dBm)
–28
0
VOUT OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–4048
3600
5533 TA02
800
–24 –20 –16 –12 –8 12
2400
2800
3200
VCC = 3.6V
VOS = 0V
TA = 25°C
500MHz
4GHz
1GHz
5GHz
10GHz
11GHz
9GHz
8GHz
6GHz
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
LTC5533
2
5533f
12
11
10
9
8
7
1
2
3
4
5
6
RF
IN1
GND1
SHDN1
RF
IN2
GND2
SHDN2
V
CC1
V
OUT1
V
OS1
V
CC2
V
OUT2
V
OS2
TOP VIEW
DE12 PACKAGE
12-LEAD (4mm × 3mm) PLASTIC DFN
13
PARAMETER CONDITIONS MIN TYP MAX UNITS
V
CC
Operating Voltage ●2.7 6 V
I
VCC
Operating Current I
VOUT
= 0mA ●0.45 0.7 mA
I
VCC
Shutdown Current SHDN = LO ●0.01 2 µA
V
OUT
Start Voltage
(No RF Input) R
LOAD
= 2k, V
OS
= 0V ●85 110 to 150 170 mV
SHDN = LO 1 mV
V
OUT
Output Current V
OUT
= 1.75V, V
CC
= 2.7V, ∆V
OUT
< 10mV ●24 mA
V
OUT
Enable Time SHDN = LO to HI, C
LOAD
= 33pF, R
LOAD
= 2k ●820 µs
V
OUT
Bandwidth C
LOAD
= 33pF, R
LOAD
= 2k (Note 4) 2 MHz
V
OUT
Load Capacitance (Note 6) ●33 pF
V
OUT
Slew Rate V
RFIN
= 1V Step, C
LOAD
= 33pF, R
LOAD
= 2k (Note 3) 3 V/µs
V
OUT
Noise V
CC
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination 1 mV
P-P
V
OUT
Shutdown Resistance Resistance Measured to Ground 280 Ω
V
OS
Voltage Range ●01V
V
OS
Input Current V
OS
= 1V ●–0.5 0.5 µA
SHDN Voltage, Chip Disabled V
CC
= 2.7V to 6V ●0.35 V
SHDN Voltage, Chip Enabled V
CC
= 2.7V to 6V ●1.4 V
SHDN Input Current SHDN = 3.6V ●22 36 µA
RF
IN
Input Frequency Range 300 to 11000 MHz
RF
IN
Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) V
CC
= 2.7V to 6V –32 to 12 dBm
RF
IN
AC Input Resistance f = 1000MHz, Pin = –25dBm 220 Ω
RF
IN
Input Shunt Capacitance f = 1000MHz, Pin = –25dBm 0.65 pF
Channel to Channel Isolation f = 2GHz 45 dB
V
CC1
, V
CC2
, V
OUT1
, V
OUT2
, V
OS1
, V
OS2
....... –0.3V to 6.5V
RF
IN1
, RF
IN2
Voltage ........................(V
CC
± 1.25V) to 7V
RF
IN1
, RF
IN2
Power (RMS) ................................. 12dBm
SHDN1, SHDN2 Voltage to GND .. –0.3V to (V
CC
+ 0.3V)
I
VOUT1
, I
VOUT2
........................................................ 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
ABSOLUTE AXI U RATI GS
W
WW
U
PACKAGE/ORDER I FOR ATIO
UUW
(Note 1)
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
VOS = 0V and SHDN = HI unless otherwise noted. Limits below are for one channel unless otherwise noted.
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ORDER PART
NUMBER
DFN PART
MARKING
T
JMAX
= 125°C, θ
JA
= 40°C/W
EXPOSED PAD IS GND (PIN 13)
MUST BE SOLDERED TO PCB
5533
LTC5533EDE
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: The rise time at V
OUT
is measured between 1.3V and 2.3V.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
equation: BW = 0.35/rise time.
Note 5: RF performance is production tested at 1800MHz
Note 6: Guaranteed by design.
LTC5533
3
5533f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Typical Detector Characteristics,
300MHz
Output Starting Voltage vs Supply
Voltage (RF Input Signal Off,
VOS = 0V)
SUPPLY VOLTAGE (V)
2.5
120
V
OUT
OUTPUT VOLTAGE (mV)
125
130
135
140
3 3.5 4 4.5
5533 G01
5 5.5 6
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
SUPPLY VOLTAGE (V)
2.5
420
SUPPLY CURRENT (µA)
440
460
480
500
3 3.5 4 4.5
5533 G02
5 5.5 6
TA = 85°C
TA = 25°C
TA = –40°C
SUPPLY VOLTAGE (V)
2.5
SHUTDOWN CURRENT (nA)
2.0
2.5
3.0
45
5533 G03
1.5
1.0
3 3.5 4.5 5.5 6
0.5
0
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
Supply Current vs Supply Voltage
(RF Input Signal Off, VOS = 0V)
Shutdown Current vs Supply
Voltage (RF Input Signal Off,
VOS = 0V, SHDN = 0V)
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–12 –8 –4 0
3600
5533 G04
800
–28 –24 –20 –16 1284
2400
2800
3200
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–12 –8 –4 0
3600
5533 G05
800
–28 –24 –20 –16 1284
2400
2800
3200
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–12 –8 –4 0
3600
5533 G06
800
–28 –24 –20 –16 1284
2400
2800
3200
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
Typical Detector Characteristics,
1GHz
Typical Detector Characteristics,
2GHz
Typical Detector Characteristics,
3GHz
Typical Detector Characteristics,
5GHz
Typical Detector Characteristics,
7GHz
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–12 –8 –4 0
3600
5533 G07
800
–28 –24 –20 –16 1284
2400
2800
3200
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–12 –8 –4 0
3600
5533 G08
800
–28 –24 –20 –16 1284
2400
2800
3200
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–12 –8 –4 0
3600
5533 G09
800
–28 –24 –20 –16 1284
2400
2800
3200
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
(For one channel. SHDN = VCC, unless
otherwise specified.)
LTC5533
4
5533f
VOUT Slope vs RF Input Power
at 300MHz
RF INPUT POWER (dBm)
–32
1
VOUT SLOPE (mV/dB)
100
1000
–20 –8–28 –16 –4–24 –12 408
5533 G10
10
VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 25°C
TA = 85°C
RF INPUT POWER (dBm)
–32
1
VOUT SLOPE (mV/dB)
100
1000
–20 –8–28 –16 –4–24 –12 408
5533 G11
10
VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 25°C
TA = 85°C
RF INPUT POWER (dBm)
–32
1
VOUT SLOPE (mV/dB)
100
1000
–20 –8–28 –16 –4–24 –12 408
5533 G12
10
VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 25°C
TA = 85°C
VOUT Slope vs RF Input Power
at 1GHz
VOUT Slope vs RF Input Power
at 2GHz
VOUT Slope vs RF Input Power
at 3GHz
VOUT Slope vs RF Input Power
at 5GHz
VOUT Slope vs RF Input Power
at 7GHz
RF INPUT POWER (dBm)
–32
1
V
OUT
SLOPE (mV/dB)
100
1000
–20 –8–28 –16 –4–24 –12 408
5533 G13
10
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–32
1
V
OUT
SLOPE (mV/dB)
100
1000
–20 –8–28 –16 –4–24 –12 408
5533 G14
10
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–32
1
V
OUT
SLOPE (mV/dB)
100
1000
–20 –8–28 –16 –4–24 –12 408
5533 G15
10
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
VOUT Variation Relative to 25°C
vs RF Input Power at 300MHz
RF INPUT POWER (dBm)
–30
–3
VOUT VARIATION (dB)
–2
0
1
2
–22 –14 –10 6
5533 G16
–1
–26 –18 –6 –2 2
3VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 85°C
VOUT Variation Relative to 25°C
vs RF Input Power at 1GHz
VOUT Variation Relative to 25°C
vs RF Input Power at 2GHz
RF INPUT POWER (dBm)
–30
–3
VOUT VARIATION (dB)
–2
0
1
2
–22 –14 –10 6
5533 G17
–1
–26 –18 –6 –2 2
3VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 85°C
RF INPUT POWER (dBm)
–30
–3
VOUT VARIATION (dB)
–2
0
1
2
–22 –14 –10 6
5533 G18
–1
–26 –18 –6 –2 2
3VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 85°C
TYPICAL PERFOR A CE CHARACTERISTICS
UW
(For one channel. SHDN = VCC, unless
otherwise specified.)
LTC5533
5
5533f
VOUT Variation Relative to 25°C
vs RF Input Power at 3GHz
VOUT Variation Relative to 25°C
vs RF Input Power at 5GHz
VOUT Variation Relative to 25°C
vs RF Input Power at 7GHz
RF INPUT POWER (dBm)
–30
–3
VOUT VARIATION (dB)
–2
0
1
2
–22 –14 –10 6
5533 G19
–1
–26 –18 –6 –2 2
3VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 85°C
RF INPUT POWER (dBm)
–28
–3
V
OUT
VARIATION (dB)
–2
0
1
2
–20 –12 –8 8
5533 G20
–1
–24 –16 –4 04
3V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 85°C
RF INPUT POWER (dBm)
–26
–3
VOUT VARIATION (dB)
–2
0
1
2
–18 –10 –6 10
5533 G21
–1
–22 –14 –2 26
3VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 85°C
Example VOUT1 – VOUT2 Mismatch
with No RF Signal Input
VOUT1 – VOUT2 MISMATCH (mV)
–25
PERCENTAGE DISTRIBUTION (%)
15
20
25
15
5533 G22
10
5
0–20 –15 –10 –5 0 510 20
25
VCC = 3.6V
VOS = 0V
TA = 25°C
Example VOUT1 – VOUT2 Mismatch
with –14dBm RF Signal Input at
1.8GHz
V
OUT1
– V
OUT2
MISMATCH (dB)
–1
PERCENTAGE DISTRIBUTION (%)
15
20
25
0.6
5533 G23
10
5
0–0.8–0.6–0.4–0.2 0 0.2 0.4 0.8 1
V
CC
= 3.6V
V
OS
= 0V
T
A
= 25°C
VOUT vs RF Input Power and VCC
Supply Voltage, fRF = 2GHz
RF INPUT POWER (dBm)
–32
0
VOUT OUTPUT VOLTAGE (mV)
1000
2000
3000
4000
6000
–24 –16 –8–28 –20 –12 –4 0
5533 G24
8412
5000
500
1500
2500
3500
5500
4500
VOS = 0V
TA = 25°C
VCC = 6V
VCC = 5V
VCC = 4V
VCC = 3V
VOUT vs RF Input Power and VOS,
fRF = 2GHz
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–8 –4 0 4 8
3600
5533 G25
800
–28 –24 –20 –16 –12 12
2400
2800
3200
V
CC
= 3.6V
T
A
= 25°C
V
OS
= 1V
V
OS
= 0V
V
OS
= 0.5V
V
OS
= 0.75V
V
OS
= 0.25V
Channel-to-Channel Isolation vs
RF Input Frequency
RF INPUT FREQUENCY (MHz)
0
–70
ISOLATION (dB)
–60
–50
–40
–30
–20
2000 4000 6000 8000
5533 G26
10000 12000
VCC = 3.6V
VOS = 0V
TA = 25°C
RF PIN = +10dBm
CH. 1 CH. 2
CH. 2 CH. 1
Output Delay vs RF Input Power
RF INPUT POWER (dBm)
–20
100
OUTPUT DELAY (ns)
200
400
500
600
–12 –8 –4 0
1000
5533 G27
300
–16 84
700
800
900
V
CC
= 3.6V
V
OS
= 0V
T
A
= 25°C
90% SWITCHING
50% SWITCHING
TYPICAL PERFOR A CE CHARACTERISTICS
UW
(For one channel. SHDN = VCC, unless
otherwise specified.)
LTC5533
6
5533f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
0.3000GHz-7.000GHz
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY RESISTANCE REACTANCE
(GHz) (Ω)(Ω)
0.30 290.45 –136.22
0.50 234.41 –162.54
0.70 178.25 –170.53
0.90 137.31 –159.89
1.10 109.17 –147.57
1.30 86.30 –136.18
1.50 68.65 –121.74
1.70 57.48 –107.60
1.90 49.79 –96.72
2.10 43.56 –86.70
2.30 38.67 –77.91
2.50 34.82 –70.13
2.70 31.68 –62.86
2.90 29.13 –56.01
3.10 27.17 –49.83
3.30 25.73 –44.24
3.50 24.56 –39.74
3.70 23.18 –35.35
3.90 22.31 –30.62
4.10 20.73 –26.88
4.30 19.88 –22.31
4.50 19.40 –18.23
4.70 19.05 –14.25
4.90 19.08 –10.21
5.10 19.55 – 6.30
5.30 20.85 – 2.84
5.50 21.94 –1.49
5.70 20.60 – 0.07
5.90 19.29 2.99
6.10 18.69 6.61
6.30 18.53 10.39
6.50 18.74 14.35
6.70 19.79 17.91
6.90 19.75 20.77
7.00 19.99 22.47
5508 TA03
S11 Forward Reflection
Impedance
LTC5533
7
5533f
S11 Forward Reflection
Impedance
0.3000GHz-7.000GHz
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY RESISTANCE REACTANCE
(GHz) (Ω)(Ω)
0.30 216.45 –76.47
0.50 190.63 –98.28
0.70 161.98 –112.03
0.90 133.17 –111.53
1.10 113.08 –109.05
1.30 94.55 –107.08
1.50 75.33 –98.50
1.70 63.52 –88.19
1.90 55.19 –80.05
2.10 48.64 –72.23
2.30 43.73 –64.81
2.50 39.71 –58.31
2.70 36.47 –52.27
2.90 33.69 –46.77
3.10 31.61 –41.25
3.30 29.78 –36.61
3.50 28.27 –32.39
3.70 26.63 –28.12
3.90 26.12 –23.97
4.10 24.20 –20.75
4.30 23.28 –16.69
4.50 22.60 –12.77
4.70 22.21 – 9.08
4.90 22.15 –5.24
5.10 22.61 –1.58
5.30 23.90 1.53
5.50 24.97 2.62
5.70 23.51 4.00
5.90 22.25 6.94
6.10 21.57 10.62
6.30 21.43 14.02
6.50 21.69 17.77
6.70 22.68 21.24
6.90 22.81 24.21
7.00 23.07 25.56
5508 TA04
TYPICAL PERFOR A CE CHARACTERISTICS
UW
LTC5533
8
5533f
V
CC1
, V
CC2
(Pins 1, 4): Power Supply Voltage, 2.7V to 6V.
V
CC
should be bypassed appropriately with ceramic
capacitors.
V
OUT1
, V
OUT2
(Pins 2, 5): Detector Outputs.
V
OS1
, V
OS2
(Pins 3, 6): V
OUT
Offset Voltage Adjustments.
These pins adjust the starting V
OUT
voltage when no RF
signal is present. For V
OS
from 0V to 130mV, V
OUT
is
unaffected by V
OS
. For V
OS
> 130mV, V
OUT
is the sum of
V
OS
plus the detected RF signal.
SHDN1, SHDN2 (Pin 10, 7): Shutdown Inputs. A logic low
on the SHDN pin places the corresponding detector in
shutdown mode. A logic high enables the detector. SHDN
has an internal 160k pulldown resistor to ensure that the
detector is shutdown when no SHDN input is applied. In
shutdown V
OUT
is connected to ground via a 280Ω resis-
tor. Channels can be shut down independently.
GND1, GND2 (Pins 11, 8): Ground.
RF
IN1
, RF
IN2
(Pins 12, 9): RF Input Voltage. Referenced
to V
CC
. A coupling capacitor must be used to connect to
the RF signal source. These pins have internal 500Ω
terminations, Schottky diode detectors and peak detector
capacitors.
Exposed Pad (Pin13): Ground.
BLOCK DIAGRA
W
UU
U
PI FU CTIO S
–
+
–
+
5531 BD
25pF
V
OUT
GND
12pF TO 200pF
(DEPENDING ON
APPLICATION)
V
OS
BUFFER
500Ω
500Ω
RF DET
50µA50µA80k
BIAS
RF
SOURCE
RF
IN
V
CC
ONE CHANNEL
31k
24k
30k
30k
–
+
+
120mV
80k
SD
SD
SD
SD
SHDN
160k
180Ω
100Ω
(One Channel)
LTC5533
9
5533f
APPLICATIO S I FOR ATIO
WUUU
Operation
The LTC5533 contains two RF detector dice in one pack-
age forming two independent RF detector channels. Each
channel provides RF power detection over frequencies
ranging from 300MHz to 11GHz. Channel functions include
an internal frequency compensated buffer amplifier with the
gain set to 2x, an RF Schottky diode peak detector and level
shift amplifier to convert the RF input signal to low frequency
and a delay circuit to avoid voltage transients at V
OUT
when
powering up. The LTC5533 has both shutdown and start-
ing voltage adjustment capabilities.
Buffer Amplifiers
The output buffer amplifiers are capable of supplying
typically 4mA into a load. These amplifiers have band-
widths of 2MHz and a fixed internal gain of two.
The V
OS
inputs control the DC input voltages to the buffer
amplifiers. V
OS
must be connected to ground if the DC
output voltage is not to be changed. The buffers are initially
trimmed to approximately 130mV with V
OS
connected to
ground.
The V
OS
pins are used to change the initial V
OUT
starting
voltage. This function enables the LTC5533 outputs to
span the input range of a variety of analog-to-digital
converters. V
OUT
will not change until V
OS
exceeds 130mV.
The voltage at V
OUT
for V
OS
>130mV and with no RF signal
present is:
V
OUT
= V
OS
V
OUT
will track V
OS
above 130mV.
RF Detectors
The internal RF Schottky diode peak detectors and level
shift amplifiers convert the RF input signals to a low
frequency signal. The detectors demonstrate excellent
efficiency and linearity over a wide range of input power.
The Schottky diodes are biased at about 55µA and drive
25pF internal peak detector capacitors.
Applications
T
he LTC5533 can be used as a self-standing signal
strength measuring receiver for a wide range of input
signals from –32dBm to 12dBm for frequencies from
300MHz to 11GHz. Operation at higher frequencies is
achievable with reduced performance. Consult factory for
more information. Figure 1 plots the output voltage as a
function of RF input power of an 11GHz CW input signal.
V
CC1
V
OUT1
V
OS1
V
CC2
V
OUT2
V
OS2
RF
IN1
GND
SHDN1
RF
IN2
GND
SHDN2
1
2
3
4
5
6
12
11
10
9
8
7
13
C8
100pF
C9
OPT
C5
OPT
C4
OPT
C3
39pF
C6
39pF
J1
RF
IN1
J2
RF
IN2
R2
OPT
R1
OPT
C10
OPT
C7
0.1µF
C2
100pF
C1
0.1µF
V
CC1
2.7V TO 6V
V
OUT1
V
OS1
LTC5533
V
CC2
2.7V TO 6V
V
OUT2
V
OS2
SHDN2
5533 BD
SHDN1
Demo Board Schematic
LTC5533
10
5533f
APPLICATIO S I FOR ATIO
WUUU
RF INPUT POWER (dBm)
–32
0
V
OUT
OUTPUT VOLTAGE (mV)
400
1200
1600
2000
–12 –8 –4 0
3600
5533 F01
800
–28 –24 –20 –16 1284
2400
2800
3200
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–32
1
V
OUT
SLOPE (mV/dB)
100
1000
–20 –8–28 –16 –4–24 –12 408
5533 F02
10
V
CC
= 3.6V
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–24
–3
VOUT VARIATION (dB)
–2
0
1
2
–16 –8 –4 12
5533 F03
–1
–20 –12 048
3VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 85°C
V
CC1
V
OUT1
V
OS1
V
CC2
V
OUT2
V
OS2
RF
IN1
GND
SHDN1
RF
IN2
GND
SHDN2
1
2
3
4
5
6
12
11
10
9
8
7
LTC5533
C1
39pF R1
360Ω
20dB RESISTIVE TAP ANTENNA
C3
0.1µFLi-Ion
+
C2
39pF
CELL BAND
PCS BAND
Tx PA MODULE
DIPLEXER
MOBILE PHONE BB/DSP VPC
BSE
5533 F04
R2
150Ω
14dB RESISTIVE TAP
Figure 2 shows the corresponding slope of the 11GHz
response, and Figure 3 shows the variation of the output
voltage vs RF input power at –40°C and 85°C, normalized
to the room temperature (25°C) results.
The LTC5533 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the detector
outputs can be split between two branches, providing AC-
coupled data (or audio) output and a DC-coupled RSSI
output for signal strength measurements and AGC.
The LTC5533 can also be used for RF power detection and
control. Figure 4 is an example of an LTC5533 used for
dual band mobile phone transmitter power control.
The LTC5533 consists of two separate RF detector dice
packaged together. Consequently, detector-to-detector
isolation is good—typically 45dB at 2GHz. Output match-
ing is good, but not precise. The characterization plots in
the Typical Performance Characteristics show that the
typical output voltage mismatch is within ±25mV with no
RF input signal present. With –14dBm RF input signal, the
typical equivalent mismatch is within ±1dB.
Figure 1. Typical Detector Characteristics, 11GHz
Figure 2. VOUT Slope vs RF Input Power at 11GHz
Figure 3. VOUT Variation at –40°C and at 85°C vs RF Input Power
at 11GHz, Normalized to Room Temperature (25°C) Results. Figure 4. Dual Band Mobile Phone Transmitter
Power Contol with LTC5533
LTC5533
11
5533f
PACKAGE DESCRIPTIO
U
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
DE Package
12-Lead Plastic DFN (4mm × 3mm)
(Reference LTC DWG # 05-08-1695)
4.00 ±0.10
(2 SIDES)
3.00 ±0.10
(2 SIDES)
NOTE:
1. DRAWING PROPOSED TO BE A VARIATION OF VERSION
(WGED) IN JEDEC PACKAGE OUTLINE M0-229
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
0.38 ± 0.10
BOTTOM VIEW—EXPOSED PAD
1.70 ± 0.10
(2 SIDES)
0.75 ±0.05
R = 0.115
TYP
R = 0.20
TYP
0.25 ± 0.05
3.30 ±0.10
(2 SIDES)
16
127
0.50
BSC
PIN 1
NOTCH
PIN 1
TOP MARK
(NOTE 6)
0.200 REF
0.00 – 0.05
(UE12/DE12) DFN 0603
0.25 ± 0.05
3.30 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
1.70 ±0.05
(2 SIDES)2.20 ±0.05
0.50
BSC
0.65 ±0.05
3.50 ±0.05
PACKAGE OUTLINE
LTC5533
12
5533f
LT/TP 0105 1K • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2005
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
Infrastructure
LT®5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
LT5514 Ultralow Distortion, IF Amplifier/ADC Driver with 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB
Digitally Controlled Gain Gain Control Range
LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator
LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517 40MHz to 900MHz Direct Conversion Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator
LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5521 3.7GHz Very High Linearity Mixer 24.2dBm IIP3 at 1.95GHz, 12.5dB NF, –42dBm LO Leakage
LT5522 600MHz to 2.7GHz High Linearity Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
LT5524 Low Power, Low Distortion ADC Driver with 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control Range
Digitally Programmable Gain
LT5525 0.9GHz to 2.5GHz High Linearity, Low Power 17.6dBm IIP3 at 1.9GHz, On-Chip 50Ω RF and LO Matching,
Downconverting Mixer I
CC
= 28mA
LT5526 Broadband High Linearity, Low Power Downconverting Mixer 16.5dBm IIP3 at 0.9GHz, 11dB NF at 0.9GHz, I
CC
= 28mA
LT5528 1.6GHz to 2.45GHz High Linearity Direct Quadrature Modulator 21.8dBm OIP3 at 2GHz, –159dBm/Hz, Noise Floor, All Ports 50Ω
Matched, Single-Ended RF and LO Ports
RF Power Detectors
LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC5505 300MHz to 3GHz RF Power Detectors LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507 100kHz to 1000MHz RF Power Detector –34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
LTC5508 300MHz to 7GHz RF Power Detector –32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5530 300MHz to 7GHz Precision RF Power Detector Precision V
OUT
Offset Control, Shutdown and Adjustable Gain
LTC5531 300MHz to 7GHz Precision RF Power Detector Precision V
OUT
Offset Control, Shutdown and Adjustable Offset
LTC5532 300MHz to 7GHz Precision RF Power Detector Precision V
OUT
Offset Control, Adjustable Gain and Offset
LT5534 50MHz to 3GHz RF Power Detector 60dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5535 300MHz to 7GHz Precision RF Detector with 12MHz Amplifier Precision V
OUT
Offset Control, Adjustable Gain and Offset
LTC5536 600MHz to 7GHz Precision RF Detector With Fast Comparator –26dBm to 12dBm Range, 2mA Supply Current at 2V to 6V Supply,
Output Latch Enable Output
RF Power Controllers
LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
LTC4402 Multiband RF Power Controller Multiband GSM/GPRS/EDGE Mobile Phones
LTC4402-1: Single Channel Output Control
LTC4402-2: Dual Channel Output Control
LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
