2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features * * * * * * * * www.onsemi.com Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package These Devices are Pb-Free and are RoHS Compliant ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 D S G SC-70 3 LEAD CASE 419AB MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous TJ = 100C Pulsed Operating Junction Temperature Range Storage Temperature Range Symbol Value Unit VDSS 60 V VGSS 20 V ID 310 195 1.2 mA mA A TJ -55 to +150 C TSTG -55 to +150 C 7KW 7KW = Specific Device Marking D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G THERMAL CHARACTERISTICS Parameter Total Device Dissipation Derating above TA = 25C Thermal Resistance, Junction to Ambient* Symbol Value Unit PD 300 2.4 mW mW/C RqJA 410 C/W *Device mounted on FR-4 PCB, 1 x 0.85 x 0.062. Minimum land pad size (c) Semiconductor Components Industries, LLC, 2011 May, 2018 - Rev. 1 1 S ORDERING INFORMATION Device 2N7002KW Package Shipping SC-70 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: 2N7002KW/D 2N7002KW ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 mA 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 125C - - 1.0 0.5 mA mA IGSS Gate-Body Leakage VDS = 0 V, VGS = 20 V - - 10 mA BVDSS ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 1.1 - 2.1 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA VGS = 10 V, ID = 500 mA, TJ = 100C VGS = 5 V, ID = 50 mA VGS = 5 V, ID = 50 mA, TJ = 100C - - 1.6 2.4 2 3 W VDS(on) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA VGS = 5 V, ID = 50 mA - - 3.75 1.5 V On-State Drain Current VGS = 10 V, VDS = 2 V 500 - - mA Forward Transconductance VDS = 2 V, ID = 0.2 A 80 - - mS VDS = 25 V, VGS = 0 V, f = 1.0 MHz - - 50 pF ID(on) gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance - - 25 pF Crss Reverse Transfer Capacitance - - 5 pF - - 20 ns - - 60 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time td(off) Turn-Off Delay Time VDD = 30 V, RL = 150 W, VGS = 10 V, ID = 200 mA, RGEN = 25 W DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current - - 115 mA ISM Maximum Pulsed Drain-Source Diode Forward Current - - 0.8 A VSD Drain-Source Diode Forward Voltage - - 1.1 V IS VGS = 0 V, IS = 115 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. www.onsemi.com 2 2N7002KW TYPICAL PERFORMANCE CHARACTERISTICS 2.2 VGS = 10V 2.1 RDS(on) (W) Normalized Drain-Source On-Resistance ID. Drain-Source Current (A) 2.4 9V 8V 1.8 6V 7V 1.5 5V 1.2 4V 0.9 0.6 0.3 0.0 VGS = 3V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.0 1.8 VGS = 10V ID = 500mA 1.6 1.4 VGS = 5V 1.2 I D = 50mA 1.0 0.8 0.6 0.4 -50 4.5 0 VDS. Drain-Source Voltage (V) 100 150 o Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Temperature 3.0 5 VGS = 10V VGS = 4V 4.5V 2.5 4 VGS = 7V (W) 5V 2.0 RDS(on) Drain-Source On-Resistance RDS(on), (W) Drain-Source On-Resistance 50 TJ. Junction Temperature ( C) 6V 1.5 8V 1.0 10V 9V 3 o TA = 125 C 2 o TA = 25 C 1 o TA = -55 C 0.5 0.0 0.5 1.0 1.5 0 0.0 2.0 ID. Drain-Source Current(A) Vth. Normalized Gate-Source Threshold Voltage (V) ID. Drain-Source Current (A) o TA = -55( C) o TA = 25( C) 2.5 2.0 o TA = 125( C) 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 1.5 2.0 Figure 4. On-Resistance Variation with Drain Current and Temperature 3.5 3.0 1.0 ID. Drain Current (A) Figure 3. On-Resistance Variation with Gate Voltage and Drain Current VDS = 10V 0.5 9 10 1.10 VDS = VGS 1.05 1.00 ID = 1mA 0.95 ID = 0.25mA 0.90 0.85 0.80 0.75 -25 0 25 50 75 100 125 o VGS. Gate-Source Voltage (V) TJ. Junction Temperature ( C) Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature www.onsemi.com 3 2N7002KW TYPICAL PERFORMANCE CHARACTERISTICS 10000 1.100 VGS = 0 V ID=250uA IS. Reverse Drain Current [mA] BVdss , Normalized Drain Source Breakdown Voltage 1.075 1.050 1.025 1.000 0.975 0.950 0.925 -25 0 25 50 75 100 1000 100 o TA=125 C 10 o TA=25 C 1 o TA=-55 C 0.1 125 0.0 0.2 o Figure 7. Breakdown Voltage Variation with Temperature 0.8 1.0 1.2 10 VGS. Gate-Source Voltage (V) VDS = 25V CISS 10 COSS CRSS f = 1MHZ VGS = 0V 1 1 10 8 6 ID = 500mA 4 2 ID = 115mA 0 0.0 100 0.2 0.4 0 100ms 1ms -1 10 DC RDS(on) Limit 10ms 100ms 1S -2 10 Vgs=10V Single Pulse o Rthja=410 C/W o Ta = 25 C -3 10 -4 10 -1 10 0 10 1 10 0.6 0.8 1.0 Figure 10. Gate Charge Characteristics r(t), Normalized Transient Thermal Resistance Figure 9. Capacitance Variation 10 ID = 280mA Qg. Gate Charge (nC) VDS. Drain to Source Voltage (V) ID, Drain Current [A] 0.6 Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature 100 CISS, COSS, CRSS . Capacitance (pF) 0.4 VSD. Body Diode Forward Voltage [V] TJ, Junction Temperatture( C) 1 50% 0.1 10 10% 5% 2% D=1% Single Pulse 0.01 2 Rthja(t)=r(t)*Rthja o Rthja=410 C/W 20% 1E-4 1E-3 0.01 0.1 1 10 100 1000 t1, time(sec) VDS, Drain-Source Voltage [V] Figure 11. Maximum Safe Operating Area Figure 12. Transient Thermal Response Curve www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC-70, 3 Lead, 1.25x2 CASE 419AB-01 ISSUE O D DATE 19 DEC 2008 SYMBOL MIN A 0.80 1.10 A1 0.00 0.10 A2 0.80 b 0.15 0.30 c 0.08 0.22 D 1.80 2.00 2.20 E 1.80 2.10 2.40 E1 1.15 1.25 1.35 E1 E 0.26 L e TOP VIEW 0.90 MAX 1.00 0.65 BSC e e NOM 0.36 L1 0.42 REF L2 0.15 BSC 0.46 0 8 1 4 10 q1 A2 A q b q1 L L1 A1 SIDE VIEW c L2 END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-203. DOCUMENT NUMBER: DESCRIPTION: 98AON34256E SC-70, 3 LEAD, 1.25X2 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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