© Semiconductor Components Industries, LLC, 2011
May, 2018 Rev. 1
1Publication Order Number:
2N7002KW/D
2N7002KW
N-Channel Enhancement
Mode Field Effect
Transistor
Features
Low OnResistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
UltraSmall Surface Mount Package
These Devices are PbFree and are RoHS Compliant
ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V
as per JESD22 C101
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
DrainSource Voltage VDSS 60 V
GateSource Voltage VGSS ±20 V
Maximum Drain Current Continuous
TJ = 100°C
Pulsed
ID310
195
1.2
mA
mA
A
Operating Junction Temperature Range TJ55 to
+150
°C
Storage Temperature Range TSTG 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Parameter Symbol Value Unit
Total Device Dissipation
Derating above TA = 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient*
RqJA 410 °C/W
*Device mounted on FR4 PCB, 1 x 0.85 x 0.062. Minimum land pad size
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SC70
3 LEAD
CASE 419AB
G
S
D
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
2N7002KW SC70 3000 / Tape &
Reel
7KW
7KW = Specific Device Marking
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
GS
D
2N7002KW
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS DrainSource Breakdown Voltage VGS =0V, I
D=10mA60 V
IDSS Zero Gate Voltage Drain Current VDS =60V, V
GS =0V
VDS =60V, V
GS =0V, T
J = 125°C
1.0
0.5
mA
mA
IGSS GateBody Leakage VDS =0V, V
GS =±20 V ±10 mA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS =V
GS, ID= 250 mA1.1 2.1 V
RDS(on) Static DrainSource OnResistance VGS =10V, I
D= 500 mA
VGS =10V, I
D= 500 mA, TJ = 100°C
VGS =5V, I
D= 50 mA
VGS =5V, I
D= 50 mA, TJ = 100°C
1.6
2.4
2
3
W
VDS(on) DrainSource OnVoltage VGS =10V, I
D= 500 mA
VGS =5V, I
D= 50 mA
3.75
1.5
V
ID(on) OnState Drain Current VGS =10V, V
DS = 2 V 500 mA
gFS Forward Transconductance VDS =2V, I
D= 0.2 A 80 mS
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS =25V, V
GS = 0 V, f = 1.0 MHz 50 pF
Coss Output Capacitance 25 pF
Crss Reverse Transfer Capacitance 5 pF
SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time VDD =30V, R
L = 150 W, VGS =10V,
ID = 200 mA, RGEN =25W
20 ns
td(off) Turn-Off Delay Time 60 ns
DRAINSOURCE DIODE CHARACTERISTICS
ISMaximum Continuous DrainSource Diode Forward Current 115 mA
ISM Maximum Pulsed DrainSource Diode Forward Current 0.8 A
VSD DrainSource Diode Forward Voltage VGS =0V, I
S= 115 mA 1.1 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
2N7002KW
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3
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. OnRegion Characteristics Figure 2. OnResistance Variation with
Temperature
Figure 3. OnResistance Variation with Gate
Voltage and Drain Current
Figure 4. OnResistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
0.0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
7V
VGS
= 3V
4V
5V
8V
9V
6V
VGS = 10V
ID. DrainSource Current (A)
VDS. DrainSource Voltage (V)
50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VGS
= 5V
ID = 50mA
(W)
VGS
= 10V
ID = 500mA
RDS(on)
Normalized DrainSource OnResistance
TJ. Junction Temperature ( oC)
0.0 0.5 1.0 1.5 2.0
0.5
1.0
1.5
2.0
2.5
3.0
9V
(W)
8V
6V
VGS
= 7V
10V
4.5V
5V
VGS
= 4V
RDS(on),
DrainSource OnResistance
ID. DrainSource Current(A)
0.0 0.5 1.0 1.5 2.0
0
1
2
3
4
5
TA = 55 oC
TA = 25oC
TA = 125oC
(W)
VGS = 10V
RDS(on)
DrainSource OnResistance
ID. Drain Current (A)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS
. GateSource Voltage (V)
TA = 125(oC)
TA = 25(oC)
VDS
= 10V TA = 55(oC)
ID. DrainSource Current (A)
250255075100125
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
VDS
= V
GS
ID = 1mA
ID = 0.25mA
Vth.
Normalized GateSource Threshold Voltage (V)
TJ. Junction Temperature ( oC)
12345678910
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
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4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Source Current and
Temperature
Figure 9. Capacitance Variation Figure 10. Gate Charge Characteristics
Figure 11. Maximum Safe Operating Area Figure 12. Transient Thermal Response Curve
25 0 25 50 75 100 125
0.925
0.950
0.975
1.000
1.025
1.050
1.075
1.100
ID=250uA
BVdss , Normalized
Drain Source Breakdown Voltage
TJ, Junction Temperatture( oC)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
1000
10000
TA=55oC
VGS = 0 V
TA=125oC
TA=25oC
IS. Reverse Drain Current [mA]
VSD. Body Diode Forward Voltage [V]
1 10 100
1
10
100
CRSS
COSS
f = 1MHZ
VGS
= 0V
CISS
CISS, COSS, CRSS . Capacitance (pF)
VDS
. Drain to Source Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0
0
2
4
6
8
10
ID = 115mA ID = 280mA
VDS = 25V
ID = 500mA
VGS. GateSource Voltage (V)
Qg. Gate Charge (nC)
101100101102
104
103
102
101
100
1ms
10ms
DC
1S
100ms
100ms
RDS(on) Limit
Vgs=10V
Single Pulse
Rthja=410o
a = 25oC
ID, Drain Current [A]
VDS
, DrainSource Voltage [V]
1E41E3 0.01 0.1 1 10 100 1000
0.01
0.1
1
50%
r(t), Normalized Transient Thermal Resistance
t1, time(sec)
Single Pulse
20%
10%
5%
2%
D=1%
Rthja(t)=r(t)*Rthja
Rthja=410 oC/W
T
C/W
SC70, 3 Lead, 1.25x2
CASE 419AB01
ISSUE O
DATE 19 DEC 2008
E1
D
A
L
L1 L2
ee
bA1
A2
c
TOP VIEW
SIDE VIEW END VIEW
q1
q1
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
SYMBOL MIN NOM MAX
E
q
θ
A
A1
b
c
D
E
E1
e
L
L2
0.00
0.15
0.08
0.26
1.80
1.80
1.15
0.65 BSC
0.15 BSC
1.10
0.10
0.30
0.22
0.46
2.20
2.40
1.35
L1
0.80
θ1 10º
A2 0.80 1.00
0.42 REF
0.36
2.00
2.10
1.25
0.90
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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