DATA SH EET
Product specification
Supersedes data of April 1996 1996 Sep 10
DISCRETE SEMICONDUCTORS
BAS28
High-speed double diode
b
ook, halfpage
M3D070
1996 Sep 10 2
Philips Semiconductors Product specification
High-speed double diode BAS28
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA .
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS28 consists of two
high-speed switching diodes,
fabricated in planar technology, and
encapsulated in the small plastic
SMD SOT143 package. The diodes
are not connected.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 anode (a2)
4 anode (a1)
Fig.1 Simplified outline (SOT143) and symbol.
Marking code: JTp.
handbook, halfpage
43
21
Top view
MAM059
2
3
4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 85 V
VRcontinuous reverse voltage 75 V
IFcontinuous forward current see Fig.2; note 1 215 mA
IFRM repetitive peak forward current 500 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs4A
t=1ms 1A
t=1s 0.5 A
Ptot total power dissipation Tamb =25°C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
1996 Sep 10 3
Philips Semiconductors Product specification
High-speed double diode BAS28
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF=1mA 715 mV
IF=10mA 855 mV
IF=50mA 1V
I
F
= 150 mA 1.25 V
IRreverse current see Fig.5
VR=25V 30 nA
VR=75V 1µA
V
R=25V; T
j= 150 °C30 µA
VR=75V; T
j= 150 °C50 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 1.5 pF
trr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 ;
measured at IR= 1 mA; see Fig.7
4ns
V
fr forward recovery voltage when switched from IF= 10 mA;
tr= 20 ns; see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
1996 Sep 10 4
Philips Semiconductors Product specification
High-speed double diode BAS28
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
0 50 100 200
250
0
200
MSA562 -1
150
150
100
50
IF
(mA)
Tamb (
o
C)
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function
of forward voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
101104
102103
10
1
1996 Sep 10 5
Philips Semiconductors Product specification
High-speed double diode BAS28
Fig.5 Reverse current as a function of
junction temperature.
105
104
10 200
0
MGA884
100 T ( C)
jo
IR
(nA)
103
102
75 V
25 V
typ
max
V = 75 V
R
typ
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
1996 Sep 10 6
Philips Semiconductors Product specification
High-speed double diode BAS28
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) IR= 1 mA.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SIF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k 450
D.U.T.
MGA882
Vfr
t
output
signal
V
1996 Sep 10 7
Philips Semiconductors Product specification
High-speed double diode BAS28
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.9 SOT143.
Dimensions in mm.
handbook, full pagewidth
MBC845
10
max
o
10
max
o
30
max
o
1.1
max
0.75
0.60
0.150
0.090
0.1
max
43
2
M0.1 AB
0
0.1
0.48
TOP VIEW
1.4
1.2 2.5
max
3.0
2.8
M
0.2 AB
A
B
1.9
1
0
0.1
0.88
1.7