1996 Sep 10 2
Philips Semiconductors Product specification
High-speed double diode BAS28
FEATURES
•Small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak forward current:
max. 500 mA .
APPLICATIONS
•High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS28 consists of two
high-speed switching diodes,
fabricated in planar technology, and
encapsulated in the small plastic
SMD SOT143 package. The diodes
are not connected.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 anode (a2)
4 anode (a1)
Fig.1 Simplified outline (SOT143) and symbol.
Marking code: JTp.
handbook, halfpage
43
21
Top view
MAM059
2
3
4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −85 V
VRcontinuous reverse voltage −75 V
IFcontinuous forward current see Fig.2; note 1 −215 mA
IFRM repetitive peak forward current −500 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−4A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Tamb =25°C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C