Philips Semiconductors Product specification eee eee ee eee eee ee Silicon diffused power transistors BUX84; BUX85 a High-voltage, high-speed, glass-passivated npn power transistors in TO-220 envelopes, intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA BUX84 | BUX85 Collector-emitter voltage {peak value; Vgg = 0) VCESM max. Collector-emitter voltage (open base} VCEO max. Collector-emitter saturation voltage VCEsat max. 1 Vv Collector current (DC) lc max. 2 A Collector current (peak value) lem max, 3 A Total power dissipation up to Trmb = 50 9C Prot max. 40 Ww Fatt! time tt max. 0,4 KS MECHANICAL DATA Dimensions in mm Fig. 1 TO-220AB. 10.3 45 _ max | max - ~!| 3.7 139-| ; t { . 2.8 = 5.9 7 4 | min b F a 4 188 1 I max : a ry | at {4 0 max Pinning; nottinned _| ) __ 30 1 = base ' } 13.5 2 = collector 1.32 min =- : max 3 = emitter (2x) | \ | WE 3 | 0.9 | | IL. max >| | 0.6 | ! | (3x) _ ! |=24 MSA0GO-1 2.54 2.54 Collector connected to tab ME 7110826 00774821 SIT December 1991 416 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134} Collector-emitter voltage BUX84 | BUX85 (peak value; Vpg = 0) VcESM Vv Collector-emitter voltage (open base} VcEO V Collector current (DC) Ie max 2 A Collector current (peak value} ty = 2 ms lem max 3 A Base current {(DC) Ip max 0,75 A Base current (peak value) lem max 1 A Reverse base current (peak value) * -Igm max 1 A Total power dissipation up to Typ = 50 9C Prot max 40 Ww Storage temperature range Tstg 65 to +150 oc Junction temperature Tj max 150 oC THERMAL RESISTANCE From junction to mounting base Rthj-mb = 2,5 K/W From junction to ambient in free air Rthj-a = = 70 K/W CHARACTERISTICS Tj = 25 9C unless otherwise specified Collector cut-off current ** Vcem = VCESMmax: VBE = 0 ICES = max. = 200 HA VcEM = VCESMmax: VBE = 9; Tj = 125 C Ices max. 1,5 mA DC current gain Ic =5 MA; Voce =5V hee min. 15 ic = 100 mA; Voge =z5V hFE min. 20 hee typ. 50 hee max. 100 * Turn-off current. ** Measured with a half-sinewave voltage (curve tracer). ME 7110826 CO776ee 47k December 1991 417 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 Emitter cut-off current Ic =0; Ven =5V lego max. 1 mA Saturation voltages Ic =9,3 A; Ig = 30mA VCEsat max. 0,8 Vv Ic= 1A;Ip=0,2A VCEsat max. 1,0 Vv Ic= TAIp=0,2A VBEsat max. 1,1 Vv Coltector-emitter sustaining voltage BUX84 | BUX85 Ic = 100 mA; teof = 0; L = 25 mH VcEOsust Min. 400 ! 450 V 7275254 min Vce ({V} Veeosust Fig, 2 Oscilloscope dispiay for sustaining voltage. +50V 100-2002 horizontal oscilloscope vertical 3002 12 6V cv 30-60Hz y 7224186 Fig. 3 Test circuit for VCEQsust- WE 7110826 0077423 302 December 1991 AIS Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Printed From CAPS XPert Version 1.2P Philips Samiconductors Silicon diffused power transistors Product specification BUX84; BUX85 CHARACTERISTICS (continued) Transition frequency at f= 1 MHz T= 25 C unless otherwise specified Ic = 0,2 A; Voge = 10 V fr typ 20 MHz Switching times Icon= 1A; Veco = 250 V lBon = 0,2 A; lBoft = 0,4 A Turn-on time ton ye Oe 8 Turn-off: Storage time ts we ae Ms Falt time ty typ 04 ys Fall time, Tryp = 95 SC tp max. 14 us 7272640 90 +-- 1g (Ped 0 t 30 ic (%o} 10 0 wel le elt gle t ton el ts le Fig. 4 Switching times waveforms with resistive load. +25V 8D139 | 200 680 $2 Ty pF 7-1. 100 22 = 100 Yee | | uF 250V Yin [L_JL rit | 2 P Vi; [Ie ' t 2 | t 20 50 680 p ys 2 uF T = 2ms BD140 T Vim = 15V + + 7Z75253.1 th Fig. 5 Test circuit resistive load. MB 7110826 0077824 245 December 1991 419 This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 7277041.1 0 BUX 84 Ic (A) 107! 10-2 10-3 5 5 10 10 10 Vee (Vy) 1. Prot max aNd Poeak max Hines. 2. Second-breakdown timits. | Region of permissible DC operation I! Permissible extension for repetitive pulse operation Il Area of permissible operation during turn-on in singie transistor converters, provided Rag < 100 22 and tp =< 0,6 us IV Repetitive pulse operation in this region is permissible, provided Vee <0 and tp <2 ms Fig. 6 Safe operating area. MB 711082eb 0077425 165 December 1991 . 420 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 10 7Z77042 BUX85 Ic (A} 1072 Iv 10-3 10 10? 10 Vee (VI 1. Prot max and Poeak max tines. 2. Second-breakdown limits. | Region of permissible DC operation {1 Permissible extension for repetitive pulse operation II! Area of permissibie operation during turn-on in single transistor converters, provided Rep < 100 22 and t, < 0,6 us IV Repetitive pulse operation in this region is permissible, provided Vge <0 and ty <2 ms Fig. 7 Safe operating area. WE 71108eb O0774eb O11 = December 1991 421 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 I2727391 100 Pp. tot max (%o) 50 0 50 100 150 Timp (C} Fig. 8 Power derating curve. 7Z77046 1 2thj-mb (K/W) 10 1071 ont 3 2 1 2 3 10 10 10 1 10 10 ty (ms) 10 Fig. 9 Pulse power rating chart. Me 7110826 007782? T55 December 1991 422 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 102 7277039 Voce = SV Tj = 25C 10 10 102 103 Ic (mA) 104 Fig. 10 Typical DC current gain. ME 711082b 0077824 994 December 1991 423 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 7277037 typ. values T= 25 PC lc = A A 3A VBEsat (v) 0,5 0 0 100 200 300 ip (mA) Fig. 71 Typical values saturation voltage, Tj = 25 9C, Ic =O3A O5A 007A 1A 4 7277040.2 VcE sat (V} 3 2 1 0 0 0,1 0,2 0,3 Ip (A) Fig. t2 Typical ( ) and maximum (}) values saturation voltage at Tj = 25 C. MH 7110826 0077829 820 December 1991 424 Printed From CAPS XPert Version 1.2P This Material Copyrighted By Philips Semiconductors.