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Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
PIN Diode π Quad Attenuator
Rev. V3
MA4P290-1225T
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Topview
PIN 3 PIN 2 PIN 1
PIN 4
Features
• 4 PIN diodes in a SOT-25 Plastic Package
• Externally Selectable Bias and RF Matching
Network
• Lead-Free (RoHS Compliant) Equivalents
Available with 260 °C Reflow Compatibility
• 5 – 3,000 MHz Useable Frequency Band
• + 45 dBm IIP3 @ 1 GHz (50 Ω)
• 2.8 dB Loss @ 1 GHz (50 Ω)
• 36 dB Attenuation @ 1 GHz (50 Ω)
Description and Applications
M/A-COM's MA4P290-1225T & MADP-007167-
12250T RoHs equivalent product is a wideband,
moderate insertion loss, high IP3, PIN Diode π
Quad Attenuator in a low-cost, surface mount SOT-
25 package. Four PIN Diodes in one package re-
duce circuit parasitics and improve circuit density.
These PIN Diode Attenuators perform well where
Variable RF Amplitude Control is required in 50 and
75 Ω circuit applications.
Wideband Attenuation Range, Frequency Flatness,
and Input IP3 make these devices suitable for better
power level control in RF Amplifiers.
Package Outline
(Topview)
Absolute Maximum Ratings @ 25 °C 1
1. Exceeding these limits may cause permanent damage.
PIN Configuration 2
PIN Function PIN Function
1 RF INPUT 4 Shunt 1 Bias
2 Series Bias 5 Shunt 2 Bias
3 RF OUTPUT
Parameter Absolute Maximum
Operating Temperature -65 °C to +125 °C
Storage Temperature
(0 mW Dissipated Power)
Junction Temperature +175 °C
DC Voltage at
Temperature Extremes l -200 V l
DC Current per diode 200 mA
Mounting Temperature +235 °C for 10 seconds
-65 °C to +150 °C
2. RF INPUT and RF OUTPUT are Functionally Symmetrical
Standard Part RoHs Equivalent Part
MA4P290-1225T MADP-007167-12250T