MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR2535CT - MBR2560CT Rev. 1.3.0 1
June 2013
MBR2535CT - MBR2560CT
25 A Schottky Barrier Rectifiers
Features
• Low Power Loss, High Efficiency
• High Surge Capacity
• Metal Silicon Junction, Majority Carrier Conduction
• High Current Capacity, Low Forward Voltage Drop
• Guard Ring for Over-V oltage Protection (OVP)
Applications
• Low-Voltage, High-Frequency Inverters
• Free Wheeling and Polarity Pro te ctio n
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresse s ab ove the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter Value Units
2535CT 2545CT 2550CT 2560CT
VRRM Maximum Repetitive Reverse Voltage 35 45 50 60 V
IF(AV) Average Rectified Forw ard Current
.375 inch Lead Length at TA = 130°C 25 A
IFSM Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 200 A
TSTG Storage Temperature Range -65 to +175 °C
TJOperating Junction Temperature Range -65 to +150 °C
Symbol Parameter Value Units
PDPower Dissipation 2.0 W
RθJA Thermal Resistance, Junction to Ambient 60 °C/W
RθJL Thermal Resistance, Junction to Lead 1.5 °C/W
TO-220AB
12
3
+
PIN1
PIN3 CASE
PIN2
MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR2535CT - MBR2560CT Rev. 1.3.0 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units
2535CT 2545CT 2550CT 2560CT
VFMaximum Forward Voltage,
per Leg
IF = 12.5A, TC = 25°C0.75V
IF = 12.5A, TC = 125°C0.65
IF = 25A, TC = 25°C0.82
IF = 25A, TC = 125°C0.73
IRMaximum Reverse Current
at Rated VRRM, per Leg TA = 25°C0.20.2mA
TA = 125°C 15.0 10.0
IRRM Peak Repetitive Reverse Surge Current, per Le g
2.0 μs Pulse Width, f = 1.0 kHz 1.0 0.5 A
CjTypical Junction Capacitance, per Leg 600 460 pF
MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR2535CT - MBR2560CT Rev. 1.3.0 3
Typical Performance Characteristics
Figure 1. Forward Current Derating Curve Figure 2. Non-Rep etitive Surge Current, per Leg
Figure 3. Forward Voltag e Characteristics, per Leg Figure 4. Revers e Current vs. Reverse Voltage, per
Leg
Figure 5. Total Capacitance, per Leg Figure 6. Thermal Impedance Characteristics
0 50 100 150
0
6
12
18
24
30
RESISTIVE O R
INDUCTIVE LOAD
Average Forward Current [A]
Case Tem peratu re [oC]
0 0.2 0.4 0.6 0.8 1 1.2
0.01
0.1
1
10
50
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Width = 300μ
μμ
μS
2% Duty Cycle
T = 25 C
º
A
T = 150 C
º
A
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
0 20406080100120140
0.001
0.01
0.1
1
10
50
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C º
A
T = 75 C
º
A
T = 125 C
º
A
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2550CT-MBR2560CT
MBR2535CT-MBR2545CT
0.1 1 10 100
100
200
500
1000
2000
5000
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
0.01 0.1 1 10 100
0.1
1
10
100
Pulse Duration [s]
Transient Thermal Impedance [ºC/W]
º
MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR2535CT - MBR2560CT Rev. 1.3.0 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE)
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For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03_TC.pdf.
TO-220 3L
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I64
®
Mouser Electronics
Authorized Distributor
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