BC817DPN,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2002 Aug 09 2002 Nov 22

DISCRETE SEMICONDUCTORS

BC817DPN

NPN/PNP general purpose

transistor

ook, halfpage

M3D302

2002 Nov 22 2

NXP Semiconductors Product data sheet

NPN/PNP general purpose transistor BC817DPN

FEATURES

•High current (500 mA)

•600 mW total powe r dissipation

•Replaces two SOT23 packaged transistors on same

PCB area.

APPLICATIONS

•General purpose switc hing and amplification

•Complementary driver

•Half and full bridge driver.

DESCRIPTION

NPN/PNP transis to r pair in a SOT457 (SC-74) plas tic

package.

MARKING

TYPE NUMBER MARKING CODE

BC817DPN N4

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2

2, 5 base TR1; TR2

6, 3 collector TR1; TR2

handbook, halfpage

MAM445

132

TR1 TR2

Top view

123

654

Fig.1 Simplified outline (SOT457) and sym bol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 45 V

ICcollector current (DC) 500 mA

ICM peak collector current 1 A

LIMITING VALUES

In accordance with the A bsolute Maxi m u m Rating System (IEC 60134).

Note

1. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

VCBO collector-base volta ge open emitter −50 V

VCEO collector-emitter voltage open base −45 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) −500 mA

ICM peak collector current −1 A

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −370 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −600 mW

2002 Nov 22 3

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC817DPN

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a pr inted-circuit board; single sided c opper; tinplated; mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Notes

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2. VBE decreases by approximately −2 mV/K with increasing temperature.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal res istance from junction to

ambient note 1 208 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

ICBO collector-base cut-off current VCB = 20 V; IE = 0 −−100 nA

VCB = 20 V; IE = 0; Tj = 150 °C−−5μA

IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 −−100 nA

hFE DC current gain VCE = 1 V; IC = 100 mA; note 1 160 −400

VCE = 1 V; IC = 500 mA; note 1 40 − −

VCEsat collector-emitte r sa turation v oltage IC = 500 mA; IB = 50 mA; note 1 −−700 mV

VBE base-emitter vo ltage VCE = 1 V; IC = 500 mA;

notes 1 and 2 −−1.2 V

NPN transistor

Cccollector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz −5−pF

fTtransition frequen c y VCE = 5 V; IC = 10 mA;

f = 100 MHz 100 −−MHz

PNP transistor

Cccollector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz −9−pF

fTtransition frequen c y VCE = −5 V; IC = −10 mA;

f = 100 MHz 80 −−MHz

2002 Nov 22 4

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC817DPN

handbook, halfpage

500

100

200

300

400

MBL747

10−111010

2IC (mA)

hFE

103

(3)

(1)

(2)

Fig.2 DC current gain as a fu nction of collector

current; ty pical values.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

TR1 (NPN) VCE = 1 V.

handbook, halfpage

010

1000

200

400

600

800

2468

VCE (V)

(mA)

MBL748

(1) (2) (3) (4) (5)

(6)

(7)

(8)

(9)

(10)

Fig.3 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = 15 mA.

(2) IB = 13.5 mA.

(3) IB = 12 mA.

(4) IB = 10.5 mA.

(5) IB = 9 mA.

(6) IB = 7.5 mA.

(7) IB = 6 mA.

(8) IB = 4.5 mA.

(9) IB = 3 mA.

(10) IB = 1.5 mA.

TR1 (NPN)

2002 Nov 22 5

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC817DPN

handbook, halfpage

103

102

MBL749

10−1110 IC (mA)

VCEsat

(mV)

102103

(1)

(2)

(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

TR1 (NPN) IC/IB = 10.

handbook, halfpage

200

1200

400

600

800

1000

MBL750

−1

110 IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

TR1 (NPN) VCE = 1 V.

2002 Nov 22 6

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC817DPN

handbook, halfpage

400

600

200

300

500

100

MHC324

−10

−1

−1−10

hFE

−10

IC (mA)

−10

(1)

(2)

(3)

Fig.6 DC current gain as a fu nction of collector

current; ty pical values.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

TR2 (PNP) VCE = −1 V.

handbook, halfpage

0−10

VCE (V)

−1000

−200

−400

−600

−800

−2

(mA)

−4−6−8

MHC325

(10)

(6)

(5)

(4)

(1)

(2)

(3)

(9)

(8)

(7)

Fig.7 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = −7 mA.

(2) IB = −6.3 mA.

(3) IB = −5.6 mA.

(4) IB = −4.9 mA.

(5) IB = −4.2 mA.

(6) IB = −3.5 mA.

(7) IB = −2.8 mA.

(8) IB = −2.1 mA.

(9) IB = −1.4 mA.

(10) IB = −0.7 mA.

TR2 (PNP)

2002 Nov 22 7

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC817DPN

handbook, halfpage

−103

−102

−10

−1

MHC326

−10−1−1−10

VCEsat

(mV)

−102IC (mA)

−103

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

TR2 (PNP) IC/IB = 10.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MHC327

−10−1−1−10

VBE

(mV)

−102IC (mA)

−103

(3)

(2)

(1)

Fig.9 Base-emitter voltage as a function of

collector current; typical values.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

TR2 (PNP) VCE = −1 V.

2002 Nov 22 8

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC817DPN

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT457 SC-74

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

Plastic surface mounted package; 6 leads SOT45

UNIT A1bpcDEHELpQywv

mm 0.1

0.013 0.40

0.25 3.1

2.7

0.26

0.10 1.7

1.3

0.95 3.0

2.5 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2 0.33

0.23

1.1

0.9

97-02-28

01-05-04

2002 Nov 22 9

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC817DPN

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa t ion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betwee n information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property ri gh ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e- mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document does not form p art of any quotation or co nt ra ct, is b elieve d to be accurate and reliable and may be change d

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or inte llectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No change s were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 613514/02/pp10 Date of release: 2002 Nov 22 Document orde r number: 9397 750 10583