White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 JEDEC Approved Packages 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101) Commercial, Industrial and Military Temperature Ranges VCC WE NC A14 A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 MIL-STD-883 Compliant Devices Available Write Endurance 10,000 Cycles Data Retention at 25C, 10 Years Low Power CMOS Operation Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Page Write Cycle Time 10ms Max. Data Polling for End of Write Detection Hardware and Software Data Protection TTL Compatible Inputs and Outputs PIN DESCRIPTION A0-16 Address Inputs I/O0-7 Data Input/Output CS Chip Select OE Output Enable WE Write Enable Vcc +5.0V Power VSS Ground February 2002 Rev. 3 1 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WME128K8-XXX White Electronic Designs A BSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Any Pin Voltage on OE and A9 Symbol TA TSTG VG TRUTH TABLE Unit C C V V -55 to +125 -65 to +150 -0.6 to + 6.25 -0.6 to +13.5 CS H L L X X X NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Symbol Min Max Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.0 VCC + 0.3 V Input Low Voltage VIL -0.3 +0.8 V Operating Temp. (Mil.) TA -55 +125 C Operating Temp. (Ind.) TA -40 +85 C WE X H L X H X Mode Standby Read Write Out Disable Write Inhibit Data I/O High Z Data Out Data In High Z/Data Out CAPACITANCE (TA = +25C) Parameter RECOMMENDED OPERATING CONDITIONS Parameter OE X L H H X L Input Capacitance Output Capacitance Unit Sym CIN COUT Condition VIN = 0V, f = 1MHz VI /O = 0V, f = 1MHz Unit Max 20 20 pF pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55C TO +125C) Parameter Symbol Conditions Unit Min Input Leakage Current Output Leakage Current Dynamic Supply Current Standby Current Output Low Voltage Output High Voltage ILI ILO I CC I SB VOL VOH VCC = 5.5, VIN = GND to VCC CS = VIH, OE = VIH, VOUT = GND to V CC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 I OL = 2.1mA, Vcc = 4.5V I OH = -400A, Vcc = 4.5V Max 10 10 80 0.625 .45 2.4 A A mA mA V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V FIG. 2 AC TEST CONDITIONS AC TEST CIRCUIT I OL Current Source VZ D.U.T. 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source White Electronic Designs Corporation Phoenix AZ (602) 437-1520 2 Parameter Typ Input Pulse Levels VIL = 0, VIH = 3.0 Input Rise and Fall 5 Input and Output Reference Level 1.5 Output Timing Reference Level 1.5 Unit V ns V V Notes: VZ is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 W. VZ is typically the midpoint of V OH and VOL . I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. WME128K8-XXX White Electronic Designs READ Figure 3 shows Read cycle waveforms. A read cycle begins with selection address, chip select and output enable. Chip select is accomplished by placing the CS line low. Output enable is done by placing the OE line low. The memory places the selected data byte on I/O0 through I/O7 after the access time. The output of the memory is placed in a high impedance state shortly after either the OE line or CS line is returned to a high level. FIG. 3 READ WAVEFORMS t RC ADDRESS VALID ADDRESS CS t ACS t OE OE t DF t ACC t OH HIGH Z OUTPUT OUTPUT VALID NOTE: OE may be delayed up to tACS- tOE after the falling edge of CS without impact on tOE or by tACC- tOE after an address change without impact on tACC. AC READ CHARACTERISTICS (SEE FIGURE 3) (VCC = 5.0V, VSS = 0V, TA = -55C TO +125C) Parameter Symbol -120 Min -140 Max Min 120 -150 Max 140 Min Max Max Max Unit Max tRC tACC 120 140 150 200 250 300 Chip Select Access Time tACS 120 140 150 200 250 300 Output Hold from Address Change, OE or CS tOH Output Enable to Output Valid tOE 50 55 55 55 85 85 ns Chip Select or Output Enable to High Z Output tDF 70 70 70 70 70 70 ns 3 0 250 -300 Min Address Access Time 0 200 -250 Min Read Cycle Time 0 150 -200 Min 0 300 0 ns 0 ns ns ns White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WME128K8-XXX White Electronic Designs WRITE WRITE CYCLE TIMING Write operations are initiated when both CS and WE are low and OE is high. The EEPROM devices support both a CS and WE controlled write cycle. The address is latched by the falling edge of either CS or WE, whichever occurs last. Figures 4 and 5 show the write cycle timing relationships. A write cycle begins with address application, write enable and chip select. Chip select is accomplished by placing the CS line low. Write enable consists of setting the WE line low. The write cycle begins when the last of either CS or WE goes low. The data is latched internally by the rising edge of either CS or WE, whichever occurs first. A byte write operation will automatically continue to completion. The WE line transition from high to low also initiates an internal 150sec delay timer to permit page mode operation. Each subsequent WE transition from high to low that occurs before the completion of the 150sec time out will restart the timer from zero. The operation of the timer is the same as a retriggerable one-shot. AC WRITE CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55C TO +125C) Parameter Symbol 128Kx8 Min Write Cycle Time, TYP = 6ms Address Set-up Time Write Pulse Width (WE or CS) Chip Select Set-up Time Address Hold Time Data Hold Time Chip Select Hold Time Data Set-up Time Output Enable Set-up Time Output Enable Hold Time Write Pulse Width High White Electronic Designs Corporation Phoenix AZ (602) 437-1520 tWC tAS tWP tCS tAH tDH tCH tDS tOES t OEH tWPH 4 10 150 0 100 10 0 100 10 10 50 Unit Max 10 ms ns ns ns ns ns ns ns ns ns ns WME128K8-XXX White Electronic Designs FIG. 4 WRITE WAVEFORMS WE CONTROLLED t WC OE t OEH t OES ADDRESS (1) t AS tCSH t AH CS t CS WE t WP t WPH t DS t DH DATA IN NOTE: 1. Decoded Address Lines must be valid for the duration of the write. FIG. 5 WRITE WAVEFORMS CS CONTROLLED t WC OE t OEH t OES ADDRESS t AS WE tCSH t AH t CS CS t WP t WPH t DS t DH DATA IN 5 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WME128K8-XXX White Electronic Designs DATA POLLING The WME128K8-XXX offers a data polling feature which allows a faster method of writing to the device. Figure 6 shows the timing diagram for this function. During a byte or page write cycle, an attempted read of the last byte written will result in the complement of the written data on I/O7. Once the write cycle has been completed, true data is valid on all outputs and the next cycle may begin. Data polling may begin at any time during the write cycle. DATA POLLING CHARACTERISTICS (VCC = 5.0V, VCC= 0V, TA = -55C TO +125C) Parameter Data Hold Time OE Hold Time OE To Output Valid Write Recovery Time Symbol Min tDH 10 tOEH 10 tOE tWR 0 Max 55 Unit ns ns ns ns FIG. 6 DATA POLLING WAVEFORMS WE CS t OEH OE I/O7 t DH t OE HIGH Z t WR ADDRESS White Electronic Designs Corporation Phoenix AZ (602) 437-1520 6 WME128K8-XXX White Electronic Designs PAGE WRITE OPERATION PAGE WRITE CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55C TO +125C) The WME128K8-XXX has a page write operation that allows one to 128 bytes of data to be written into the device and consecutively loads during the internal programming period. Successive bytes may be loaded in the same manner after the first data byte has been loaded. An internal timer begins a time out operation at each write cycle. If another write cycle is completed within 150s or less, a new time out period begins. Each write cycle restarts the delay period. The write cycles can be continued as long as the interval is less than the time out period. Page Mode Write Characteristics Parameter Write Cycle Time, TYP = 6ms Address Set-up Time Address Hold Time (1) Data Set-up Time Data Hold Time Write Pulse Width Byte Load Cycle Time Write Pulse Width High Symbol Unit Min tWC tAS tAH tDS tDH tWP tBLC tWPH Max 10 10 100 100 10 150 150 50 ms ns ns ns ns ns s ns 1. Page address must remain valid for duration of write cycle. The usual procedure is to increment the least significant address lines from A0 through A6 at each write cycle. In this manner a page of up to 128 bytes can be loaded in to the EEPROM in a burst mode before beginning the relatively long interval programming cycle. After the 150s time out is completed, the EEPROM begins an internal write cycle. During this cycle the entire page of bytes will be written at the same time. The internal programming cycle is the same regardless of the number of bytes accessed. FIG. 7 PAGE MODE WRITE WAVEFORMS OE CS t WP t WPH t BLC WE t AS ADDRESS t AH VALID ADDRESS t DS DATA VALID DATA t WC t DH BYTE 0 BYTE 1 7 BYTE 2 BYTE 3 BYTE 127 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com White Electronic Designs FIG. 8 SOFTWARE DATA PROTECTION ENABLE ALGORITHM (1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 WRITES ENABLED(2) LOAD DATA XX TO ANY ADDRESS(4) LOAD LAST BYTE TO LAST ADDRESS ENTER DATA PROTECT STATE NOTES: 1. Data Format: I/O7-I/O0 (Hex); Address Format: A16 -A0 (Hex). 2. Write Protect state will be activated at end of write even if no other data is loaded. 3. Write Protect state will be deactivated at end of write period even if no other data is loaded. 4. 1 to 128 bytes of data may be loaded. White Electronic Designs Corporation Phoenix AZ (602) 437-1520 8 WME128K8-XXX White Electronic Designs SOFTWARE DATA PROTECTION FIG. 9 SOFTWARE BLOCK DATA PROTECTION DISABLE ALGORITHM A software write protection feature may be enabled or disabled by the user. When shipped by White Microelectronics, the WME128K8-XXX has the feature disabled. Write access to the device is unrestricted. To enable software write protection, the user writes three access code bytes to three special internal locations. Once write protection has been enabled, each write to the EEPROM must use the same three byte write sequence to permit writing. After setting software Data protection, any attempt to write to the device without the three-byte command sequence will start the internal write timers. No Data will be written to the device; however, for the duration of tWC. The write protection feature can be disabled by a six byte write sequence of specific data to specific locations. Power transitions will not reset the software write protection. LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 80 TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 The software write protection guards against inadvertent writes during power transitions or unauthorized modification using a PROM programmer. LOAD DATA 55 TO ADDRESS 2AAA (3) EXIT DATA PROTECT STATE WME128K8-XXX LOAD DATA 20 TO ADDRESS 5555 HARDWARE DATA PROTECTION These features protect against inadvertent writes to the WME128K8-XXX. These are included to improve reliability during normal operation: LOAD DATA XX TO ANY ADDRESS(4) a) VCC power on delay LOAD LAST BYTE TO LAST ADDRESS As VCC climbs past 3.8V typical the device will wait 5msec typical before allowing write cycles. b) VCC sense While below 3.8V typical write cycles are inhibited. c) Write inhibiting Holding OE low and either CS or WE high inhibits write cycles. d) Noise filter Pulses of <15ns (typ) on WE or CS will not initiate a write cycle. NOTES: 1. Data Format: I/O7-I/O0 (Hex); Address Format: A16 -A0 (Hex). 2. Write Protect state will be activated at end of write even if no other data is loaded. 3. Write Protect state will be deactivated at end of write period even if no other data is loaded. 4. 1 to 128 bytes of data may be loaded. 9 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WME128K8-XXX White Electronic Designs PACKAGE 101: 32 LEAD, CERAMIC SOJ 3.96 (0.156) MAX 21.1 (0.830) 0.25 (0.010) 0.89 (0.035) Radius TYP 0.2 (0.008) 0.05 (0.002) 11.3 (0.446) 0.2 (0.009) 9.55 (0.376) 0.25 (0.010) 1.27 (0.050) 0.25 (0.010) PIN 1 IDENTIFIER 1.27 (0.050) TYP 19.1 (0.750) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 42.4 (1.670) 0.4 (0.016) 15.04 (0.592) 0.3 (0.012) 4.34 (0.171) 0.79 (0.031) PIN 1 IDENTIFIER 0.84 (0.033) 0.4 (0.014) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation Phoenix AZ (602) 437-1520 10 White Electronic Designs WME128K8-XXX ORDERING INFORMATION W M E 128K8 - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55C to +125C I = Industrial -40C to +85C C = Commercial 0C to +70C PACKAGE TYPE: C = 32 Pin Ceramic DIP (Package 300) DE = 32 Lead CSOJ (Package 101) ACCESS TIME (ns) ORGANIZATION 128K x 8 EEPROM MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. DEVICE TYPE SPEED PACKAGE SMD NO. 128K x 8 EEPROM Monolithic 300ns 32 pin DIP (C) 5962-96796 01HYX 128K x 8 EEPROM Monolithic 250ns 32 pin DIP (C) 5962-96796 02HYX 128K x 8 EEPROM Monolithic 200ns 32 pin DIP (C) 5962-96796 03HYX 128K x 8 EEPROM Monolithic 150ns 32 pin DIP (C) 5962-96796 04HYX 128K x 8 EEPROM Monolithic 140ns 32 pin DIP (C) 5962-96796 05HYX 128K x 8 EEPROM Monolithic 120ns 32 pin DIP (C) 5962-96796 06HYX 128K x 8 EEPROM Monolithic 300ns 32 lead SOJ (DE) 5962-96796 01HXX 128K x 8 EEPROM Monolithic 250ns 32 lead SOJ (DE) 5962-96796 02HXX 128K x 8 EEPROM Monolithic 200ns 32 lead SOJ (DE) 5962-96796 03HXX 128K x 8 EEPROM Monolithic 150ns 32 lead SOJ (DE) 5962-96796 04HXX 128K x 8 EEPROM Monolithic 140ns 32 lead SOJ (DE) 5962-96796 05HXX 128K x 8 EEPROM Monolithic 120ns 32 lead SOJ (DE) 5962-96796 06HXX 11 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com