17/7/08 DB91081
0.26
0.5
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
APPROVALS
zUL recognised, File No. E91231
Package System GG
'X' SPECIFICATION APPROVALS
zVDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
zCertified to EN60950 by
Nemko - Certificate No. P01102464
DESCRIPTION
The CNY17-1, CNY17-2, CNY17-3, CNY17-4,
CNY17-5 series of optically coupled isolators
consist of an infrared light emitting diode and a
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
zHigh BVCEO (70V min)
zHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
zAll electrical parameters 100% tested
zCustom electrical selections available
APPLICATIONS
zDC motor controllers
zIndustrial systems controllers
zMeasuring instruments
zSignal transmission between systems of
different potentials and impedances
CNY17-1X, CNY17-2X, CNY17-3X,
CNY17-4X, CNY17-5X CNY17-1,
CNY17-2, CNY17-3, CNY17-4,
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
1
34
6
25
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 70V
Collector-base Voltage BVCBO 70V
Emitter-collector Voltage BVECO 7V
Collector Current 50mA
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
10.46
9.86
0.26
0.6
0.1 1.25
0.75
Dimensions in mm
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
DB91081m-AAS/A8
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.65 V IF = 60mA
Reverse Current (IR)10μAV
R = 6V
Output Collector-emitter Breakdown (BVCEO)70 V I
C = 1mA ( Note 2 )
Collector-base Breakdown (BVCBO)70 V I
C = 100μA
Emitter-collector Breakdown (BVECO) 7 V I
E = 100μA
Collector-emitter Dark Current (ICEO)50nAV
CE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
CNY17-1 40 80 % 10mA IF
, 5V VCE
CNY17-2 63 125 % 10mA IF
, 5V VCE
CNY17-3 100 200 % 10mA IF , 5V VCE
CNY17-4 160 320 % 10mA IF , 5V VCE
CNY17-5 200 400 % 10mA IF , 5V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0.4 V 10mA IF
, 2.5mA
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
17/7/08
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
TYPICAL SWITCHING CHARACTERISTICS
1. Linear Operation (without saturation) Fig 1.
IF = 10mA, VCC = 5V, RL = 75Ω
ton
tr
toff
tf
FCO
UNITS
2. Switching Operation (with saturation) Fig 2
VCC = 5V, RL = 1kΩ
4.2
3.0
23
14
6.0
4.6
25
15
μs
μs
μs
μs
V
UNITS
< 0.4
GROUP
VCC = 5.0V VCC = 5.0V
RL = 75ΩRL = 1kΩ
OUTPUT OUTPUT
FIG 2
FIG 1
ton toff
10%
90% 90%
Turn-on Time
Rise Time
Turn-off Time
Fall Time
Cut-off Frequency
μs
μs
μs
μs
kHz
Turn-on Time
Rise Time
Turn-off Time
Fall Time
ton
tr
toff
tf
VCESAT
-2 and -3
(IF=10mA)
- 4
(IF=5mA)
trtf
INPUT
OUTPUT
10%
-1
(IF=20mA)
3.0
2.0
18
11
3.0
2.0
2.3
2.0
250
DB91081m-AAS/A8
17/7/08
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
100
0
0.5
1.0
1.5 IF = 10mA
VCE = 5V
Forward current IF (mA)
0
80
120
160
200
240
40
280
320
Forward current IF (mA)
Current Transfer Ratio vs. Forward Current
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
Current transfer ratio CTR (%)
VCE = 5V
TA = 25°C
70
80
1 2 5 10 20 50
Collector Current vs. Collector-emitter Voltage
( normalised to CNY17-3 )
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 2 4 6 8 10
0
10
20
30
40
50 TA = 25°C
10
15
20
30
50
-30 0 25 50 75 100 125
CNY17-3
CNY17-4
CNY17-2
CNY17-1
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 10mA
IC = 2.5mA
Ambient temperature TA ( °C )
IF = 5mA
CNY17-5
