T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 1 of 6
2N3506 thru 2N3507 A
Availa ble on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/349
Qualified Levels:
JAN, JANTX and
JANTXV
DESCRIPTION
This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature
low saturation voltage. These devices are also available in TO-5 and low profile U4
packaging. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with va rious switching speed requirements in both through-hole and
surface-mount packages.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(long-leaded)
2N3506L – 2N3507AL
U4 package
(surface mount)
2N3506U4 – 2N3507AU4
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3506 thr ough 2N3507A series.
• RoHS compliant versions available (commercial grade only).
• VCR(sat) = 0.5 V @ IC = 500 mA.
• Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
• Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliability applic ations.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N3506 2N3507 Unit
Collector-Emitter Voltage VCEO 40 50 V
Collector-Base Voltage
V
CBO
60
80
Emitter-Base Voltage
V
EBO
5.0
Thermal Resi stan ce Jun cti on-to-Ambient
R
ӨJA
175
Thermal Resi stan ce Jun cti on-to-Case
R
ӨJC
18
Collector Current
I
C
3.0
Total Power Dissipation
@ TA = +25 °C
(1)
@ TC = +110 °C (2) PD 1.0
5.0 W
Operating & Storage Junction Temperature Range
T
J
, T
stg
-65 to +200
Notes: 1. Derate linearly 5.71 mW/°C for TA > +25 °C.
2. Derate linearly 55.5 mW/°C for TC > +110 °C.
T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 2 of 6
2N3506 thru 2N3507 A
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant (commercial grade
only) with pure matte-tin (commerc ial grad e only ) .
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: NPN (see package outline).
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3506 A (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Level improvement
A = 2V gain specification @
-55°C
Blank = 1V gai n spec ifi cati on @
-55°C
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance.
ICEO
Collector cutoff current, base open.
ICEX
Collector cutoff current, circuit between bas e and emitter .
IEBO
Emitter cutoff current, collector open.
hFE
Common-emitter static forward current transfer ratio.
VCEO
Collector-emitter voltage, base open.
VCBO
Collector-emitter voltage, emitter open.
VEBO
Emitter-base voltage, collector open.
T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 3 of 6
2N3506 thru 2N3507 A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage V(BR)CEO
40
50 V
I
C
= 10 mA
2N3506
2N3507
Collector-Emitter Cutoff Current
ICEX
1.0
1.0
µA
V
CE
= 40 V; V
EB
= 4 V
VCE = 60 V; VEB = 4 V
2N3506
2N3507
Collector-Base Breakdown Voltage
IC = 100 µA
2N3506
2N3507 V(BR)CBO
60
80 V
Emitter-Base Breakdown Voltage
IE = 10 µA V(BR)EBO 5 V
ON CHARACTERISTICS (1)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1 V
2N3506
2N3507 hFE 50
35 250
175
Forward-Current Transfer Ratio
IC = 1.5 A, VCE = 2 V
2N3506
2N3507 hFE 40
30 200
150
Forward-Current Transfer Ratio
IC = 2.5 A, VCE = 3 V
2N3506
2N3507 hFE 30
25
Forward-Current Transfer Ratio
IC = 3.0 A, VCE = 5 V
2N3506
2N3507 hFE 25
20
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 1.0 V @ -55 oC
2N3506
2N3507 hFE 25
17
Forward-Current Transfer Ratio
IC = 500 mA, VCE = 2.0 V @ -55 oC
2N3506A
2N3507A hFE 25
17
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA VCE(sat) 0.5 V
Collector-Emitter Saturation Voltage
IC = 1.5 A, IB = 150 mA VCE(sat) 1.0 V
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA VCE(sat) 1.5 V
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA VBE(sat) 1.0 V
Base-Emitter Saturation Voltage
IC = 1.5 A, IB = 150 mA VBE(sat) 0.8 1.3 V
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA VBE(sat) 2.0 V
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 4 of 6
2N3506 thru 2N3507 A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
DYNAMIC CHAR ACTERIST ICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
IC = 100 mA, VCE = 5 V, f = 20 MHz |hfe| 3.0 15
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 40 pF
Input Capacitance
VEB = 3.0 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 300 pF
SWITCHING CHARACTERISTICS
(2)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Delay Time
IC = 1.5 A, IB1 = 150 mA td 15 ns
Rise Time
IC = 1.5 A, IB1 = 150 mA tr 30 ns
Storage Time
IC = 1.5 A, IB1 = IB2 = 150 mA ts 55 ns
Fall Time
IC = 1.5 A, IB1 = IB2 = 150 mA tf 35 ns
(2) Consult MIL-PRF-19500/349 for additional infornation.
T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 5 of 6
2N3506 thru 2N3507 A
GRAPHS
TC (oC) (Case)
FIGURE 1
Temperature-Power Derating Curve
NOTE: Therm al Resistance Junction to Case = 18.0 oC/W
.110-5 .110-4 .110-3 .110-2 .110-1 0.1 1 10 100
TIME (s)
FIGURE 2
Maximum Thermal Impedance (RӨJC)
DC Operation Maximum Rating (W)
THETA (oC/W)
Legend
(top to bottom)
VCE = 6 V
VCE = 10 V
VCE = 20 V
VCE = 40 V
VCE = 60 V
T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 6 of 6
2N3506 thru 2N3507 A
PACKAGE DIMENSIONS
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. Dimension LL shall be .5 inches (12.7mm) minimum and .75 inches (19.0 mm) maximum.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD 0.016 0.021 0.41 0.53 7, 8
LL
See notes 7, 8, 11
LU
0.016
0.019
0.41
0.48
7, 8
L1 0.050 1.27 7, 8
L2 0.250 6.35 7, 8
P
0.100
2.54
5
Q
0.050
1.27
4
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.71
0.86
2
r
0.010
0.25
10
α 45° TP 45° TP 6