N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt VDS
*R
DS(on)= 1Ω
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb
=25°C ID600 mA
Pulsed Drain Current IDM 8A
Gate-Source Voltage VGS ± 20 V
Power Dissipation at Tamb
=25°C Ptot 700 mW
Continuous Body Diode Current at Tamb
=25°C ISD 600 mA
Avalanche Current – Repetitive IAR 600 mA
Avalanche Energy – Repetitive EAR 15 mJ
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BVDSS 60 V ID=1mA, VGS
=0V
Gate-Source Threshold Voltage VGS(th) 1.3 3 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS
=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 10
100 µA
µAVDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 3AV
DS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 1
1.5 Ω
ΩVGS
=10V,ID=1.5A
VGS
=5V,ID=.0.5A
Forward Transconductance(1)(2) gfs 300 mS VDS=25V,ID=1.5A
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2) Coss 60 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss 20 pF
Turn-On Delay Time (2)(3) td(on) 8ns
VDD
≈25V, ID=1.5A,VGEN
=10V
Rise Time (2)(3) tr12 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVN4206AV
D
G
S
ZVN4206AV
Output Characteristics
V
DS
- Drain Source Voltage (Volts)
246810
010 20304050
Saturation Characteristics
V
DS
- Drain Source Voltage (Volts)
I
D
- Drain Current (Amps)
I
D
- Drain Current (Amps)
0
4
2
6
10
8
10V
8V
9V
7V
5V
4V
6V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
5V
4V
10V
8V
6V
9V
7V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
0
4
2
6
10
8
Output Characteristics
V
DS
- Drain Source Voltage (Volts)
246810
010 20304050
Saturation Characteristics
V
DS
- Drain Source Voltage (Volts)
I
D
- Drain Current (Amps)
I
D
- Drain Current (Amps)
0
4
2
6
10
8
10V
8V
9V
7V
5V
4V
6V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
5V
4V
10V
8V
6V
9V
7V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
0
4
2
6
10
8
TYPICA L CHA RACTERISTICS
Transfer Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Satura ti on Chara c te ris tics
V
GS-
Gate Source Voltage
(Volts) V
GS-
Gate Source Voltage (Volts)
0246810
6
4
0
2
I
D
- Drain Current (Amps)
V
DS=
10V
0
10
6
2
4
8
02 4 6 8 10
I
D=
3A
1.5A
0.5A
On-resistance v drain current
I
D-
Drain Current
(Amps)
R
DS(on)
-Drain Source On Resistance
(Ω)
0.1 1.0 10
4.5V 6V
V
GS
=3.5V 8V 10V
0.1
1.0
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
-50 -25 0 25 50 75 100 150
125 175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
I
D=
1.5A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
2.6
225
20V
14V
Transfer Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Satura ti on Chara c te ris tics
V
GS-
Gate Source Voltage
(Volts) V
GS-
Gate Source Voltage (Volts)
0246810
6
4
0
2
I
D
- Drain Current (Amps)
V
DS=
10V
0
10
6
2
4
8
02 4 6 8 10
I
D=
3A
1.5A
0.5A
On-resistance v drain current
I
D-
Drain Current
(Amps)
0.1 1.0 10
4.5V 6V
V
GS
=3.5V 8V 10V
0.1
10
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
-50 -25 0 25 50 75 100 150
125 175 200 225
20V
14V
ZVN4206AV
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Q-Charge (nC)
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
20V
I
D=
1.5A
40V 60V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
C
oss
C
iss
C
rss
01020 304050607080
0
120
80
40
160
200
T
j
- Junction Temperature (°C)
Maximum repetative avalanche energy
v Junction Temperature Maximum repetative avalanche current
v Junction Temperature
T
j
- Junction Temperature (°C)
E
AR
- Repetative Avalance Energy (mJ)
I
AR
- Repetative Avalance Current (A)
Transconductance v drain current
I
D
- Drain Current (Amps)
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
012345678910
V
DS=
10V
0
300
200
100
400
800
700
600
500
900
1000
012345678910
V
DS=
10V
0
300
200
100
400
800
700
600
500
900
1000
TYPICA L CHA RACTERISTICS
