2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) max ID max TA = 25C 60V 3 @ VGS = 10V 300mA * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1, 2 and 3) Qualified to AEC-Q101 Standards for High Reliability * Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate * * Motor control Power Management Functions * Drain SOT23 D Gate S G Top View Ordering Information Equivalent Circuit (Note 4) Part Number 2N7002E-7-F Notes: Source Top View Pin Out Configuration Case SOT23 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants 4. For packaging details, go to our website at http://www.diodes.com. Chengdu A/T Site Date Code Key Year 2003 Code P Month Code Jan 1 2004 R 2005 S Feb 2 2N7002E Document number: DS30376 Rev. 11 - 2 2006 T Mar 3 K = SAT (Shanghai Assembly/ Test site) C = CAT (Chengdu Assembly/ Test site) 7B= Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) YM C7B YM Marking Information K7B Shanghai A/T Site 2007 U Apr 4 2008 V May 5 2009 W 2010 X Jun 6 1 of 5 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D March 2012 (c) Diodes Incorporated 2N7002E Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Symbol VDSS VDGR Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Pulsed TA = 25C TA = 70C TA = 25C TA = 70C VGSS ID Units V V V mA 300 240 500 800 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Thermal Characteristics Value 60 60 20 40 250 200 IS IDM mA mA mA @TA = 25C unless otherwise specified Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 370 540 348 241 91 -55 to 150 PD RJA RJC TJ, TSTG Units mW C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25C @ TC = 125C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time Turn-Off Delay Time Notes: @ TJ = 25C Symbol Min Typ Max Unit Test Condition BVDSS 60 70 V VGS = 0V, ID = 10A IDSS 1.0 500 A VDS = 60V, VGS = 0V IGSS 10 nA VGS = 15V, VDS = 0V VGS(th) RDS (ON) 1.6 2.0 2.5 3 4 V ID(ON) gFS 1.0 0.8 80 1.0 A mS VDS = VGS, ID = 250A VGS = 10V, ID = 250mA VGS = 4.5V, ID = 200mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ciss Coss Crss Rg Qg Qgs Qgd 22 11 2.0 120 223 82 178 50 25 5.0 pF pF pF pC pC pC tD(ON) tD(OFF) 7.0 11 20 20 ns ns VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 10V, ID = 250mA VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 5. Device mounted on FR-4 PCB, with minimum recommended pad layout 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2N7002E Document number: DS30376 Rev. 11 - 2 2 of 5 www.diodes.com March 2012 (c) Diodes Incorporated 2N7002E 2.0 1.0 0.8 1.6 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) T A = -55C 0.6 0.4 0.4 0 0 1 2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 5 4 3 2 0 5 ID = 250mA ID = 75mA 1 0 3 4 5 6 7 1 2 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 2 Drain Current vs. Gate-Source Voltage 5 4 3 VGS = 4.5V 2 VGS = 10V 1 0 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 3 On Resistance vs. Gate-Source Voltage 0.2 0.6 0.8 0.4 ID, DRAIN CURRENT (A) Fig. 4 On Resistance vs. Drain Current 1.0 5 PD, POWER DISSIPATION (mW) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 125C 0.8 0.2 0 TA = 25C 1.2 4 3 VGS= 4.5V @ 200mA 2 VGS = 10V @ 250mA 1 350 300 250 200 150 100 50 0 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs. Junction Temperature 2N7002E Document number: DS30376 Rev. 11 - 2 3 of 5 www.diodes.com 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 25 March 2012 (c) Diodes Incorporated 2N7002E Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X 2N7002E Document number: DS30376 Rev. 11 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com March 2012 (c) Diodes Incorporated 2N7002E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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