MMBT4126-13 - DIODES Incorporated

DS30106 Rev. 5 - 2 1 of 3 MMBT4126

www.diodes.com ã Diodes Incorporated

MMBT4126

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·Epitaxial Planar Die Construction

·Complementary NPN Type Available (MMBT4124)

·Ideal for Medium Power Amplification and Switching

·Available in Lead Free/RoHS Compliant Version (Note 2)

Characteristic Symbol MMBT4126 Unit

Collector-Base Voltage VCBO -25 V

Collector-Emitter Voltage VCEO -25 V

Emitter-Base Voltage VEBO -4.0 V

Collector Current - Continuous (Note 1) IC-200 mA

Power Dissipation (Note 1) Pd300 mW

Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W

Operating and Storage and Temperature Range Tj,T

STG -55 to +150 °C

Features

Maximum Ratings @ TA= 25°C unless otherwise specified

TOP VIEW

Mechanical Data

·Case: SOT-23

·Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

·Moisture Sensitivity: Level 1 per J-STD-020C

·Terminal Connections: See Diagram

·Terminals: Solderable per MIL-STD-202, Method 208

·Also Available in Lead Free Plating (Matte Tin Finish

annealed over Alloy 42 leadframe). Please see Ordering

Information, Note 5, on Page 2

·Marking (See Page 2): K2B

·Ordering & Date Code Information: See Page 2

·Weight: 0.008 grams (approximate)

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

SOT-23

Dim Min Max

A0.37 0.51

B1.20 1.40

C2.30 2.50

D0.89 1.03

E0.45 0.60

G1.78 2.05

H2.80 3.00

J0.013 0.10

K0.903 1.10

L0.45 0.61

M0.085 0.180

a0°8°

All Dimensions in mm

SPICE MODEL: MMBT4126

DS30106 Rev. 5 - 2 2 of 3 MMBT4126

www.diodes.com

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage V(BR)CBO -25 ¾VIC= -10mA, IE = 0

Collector-Emitter Breakdown Voltage V(BR)CEO -25 ¾VIC= -1.0mA, IB = 0

Emitter-Base Breakdown Voltage V(BR)EBO -4.0 ¾VIE = -10mA, IC = 0

Collector Cutoff Current ICBO ¾-50 nA VCB = -20V, IE = 0V

Emitter Cutoff Current IEBO ¾-50 nA VEB = -3.0V, IC = 0V

ON CHARACTERISTICS (Note 3)

DC Current Gain hFE 120

360

¾¾IC = -2.0mA, VCE = -1.0V

IC = -50mA, VCE = -1.0V

Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.40 V IC = -50mA, IB = -5.0mA

Base-Emitter Saturation Voltage VBE(SAT) ¾-0.95 V IC = -50mA, IB = -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Cobo ¾4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0

Input Capacitance Cibo ¾10 pF VEB = -0.5V, f = 1.0MHz, IC = 0

Small Signal Current Gain hfe 120 480 ¾VCE = 1.0V, IC = -2.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product fT250 ¾MHz VCE = -20V, IC = -10mA,

f = 100MHz

Noise Figure NF ¾4.0 dB VCE = -5.0V, IC = -100mA,

RS = 1.0kW, f = 1.0kHz

Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1234567

89 OND

K2B = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

K2B

Marking Information

Device Packaging Shipping

MMBT4126-7 SOT-23 3000/Tape & Reel

Ordering Information

Date Code Key

(Note 4)

Note: 3. Short duration pulse test used to minimize self-heating effect.

4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4126-7-F.

Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009

Code JKLMNPR

ST U VW

DS30106 Rev. 5 - 2 3 of 3 MMBT4126

www.diodes.com

0.5

0.6

0.7

0.8

0.9

1 10 100

V , BASE-EMITTER (V)

BE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

Fig. 5, Typical Base-Emitter

Saturation Volta

e vs. Collector Current

IB=10

0.01

0.1

110 100 1000

V , COLLECTOR-EMITTER (V)

CE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

Fig. 4, Typical Collector-Emitter Saturation Voltage

vs. Collector Current

IB= 10

1000

100

0.1 110 1000

100

h , DC CURRENT GAIN

I , COLLECTOR CURRENT (mA)

Fig. 3, Typical DC Current Gain vs

Collector Current

T = -25°C

T = +25°C

T = 125°C

V = 1.0V

100

0.1 110 100

C , INPUT CAPACITANCE (pF)

IBO

C , OUTPUT CAPACITANCE (pF)

OBO

V , COLLECTOR-BASE VOLTAGE (V)

Fig. 2, Input and Output Capacitance vs.

Collector-Base Volta

f= 1MHz

Cibo

Cobo

100

25 50 75 100 125 150 175 200

P , POWER DISSIPATION (mW)

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs

Ambient Tem

erature

150

200

250

300

350