SEMiX302GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 600 V Tc = 25 C 379 A Tc = 80 C 286 A 300 A ICnom ICRM SEMiX(R) 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 ... 20 V 6 s -40 ... 175 C Tc = 25 C 419 A Tc = 80 C 307 A 300 A VGES VCC = 360 V VGE 15 V Tj = 150 C VCES 600 V Tj Inverse diode SEMiX302GB066HDs IF Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Typical Applications* IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180, Tj = 25 C 1400 A -40 ... 175 C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min * Matrix Converter * Resonant Inverter * Current Source Inverter Characteristics Remarks IGBT * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance VCE(sat) Symbol Conditions IC = 300 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V min. Tj = 25 C 1.45 1.85 V Tj = 150 C 1.7 2.1 V Tj = 25 C 0.9 1 V Tj = 150 C 0.85 0.9 V Tj = 25 C 1.8 2.8 m m Tj = 150 C VGE = 0 V VCE = 600 V Cres V Unit ICES VCE = 25 V VGE = 0 V 4000 max. VGE=VCE, IC = 4.8 mA Cies A C typ. VGE(th) Coes 600 -40 ... 125 Tj = 25 C 5 2.8 4.0 5.8 6.5 V 0.15 0.45 mA Tj = 150 C mA f = 1 MHz 18.5 nF f = 1 MHz 1.15 nF f = 1 MHz 0.55 nF QG VGE = - 8 V...+ 15 V 2400 nC RGint Tj = 25 C 1.00 td(on) VCC = 300 V IC = 300 A Tj = 150 C RG on = 5.1 RG off = 5.1 110 ns tr Eon td(off) tf Eoff Rth(j-c) per IGBT 85 ns 11.5 mJ 820 ns 70 ns 15 mJ 0.16 K/W GB (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 1 SEMiX302GB066HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF SEMiX(R) 2s IRRM Qrr Trench IGBT Modules Err Rth(j-c) SEMiX302GB066HDs * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Typical Applications* * Matrix Converter * Resonant Inverter * Current Source Inverter Tj = 25 C Tj = 150 C typ. max. Unit 1.4 1.60 V 1.4 1.6 V Tj = 25 C 0.9 1 1.1 V Tj = 150 C 0.75 0.85 0.95 V Tj = 25 C 1.0 1.3 1.7 m 1.8 2.2 m Tj = 150 C IF = 300 A Tj = 150 C di/dtoff = 3600 A/s T = 150 C j VGE = -8 V T j = 150 C VCC = 300 V per diode 1.5 240 A 35 C 7.5 mJ 0.19 K/W Module LCE RCC'+EE' Features min. res., terminal-chip 18 nH TC = 25 C 0.7 m TC = 125 C 1 m Rth(c-s) per module Ms to heat sink (M5) 3 0.045 5 Nm Mt to terminals (M6) 2.5 5 Nm 250 g w K/W Temperature sensor R100 Tc=100C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% K Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance GB 2 Rev. 0 - 16.04.2010 http://store.iiic.cc/ (c) by SEMIKRON SEMiX302GB066HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 3 SEMiX302GB066HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 - 16.04.2010 http://store.iiic.cc/ (c) by SEMIKRON SEMiX302GB066HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 5