SEMiX302GB066HDs
© by SEMIKRON Rev. 0 – 16.04.2010 1
SEMiX® 2s
GB
Trench IGBT Modules
SEMiX302GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 600 V
ICTj= 175 °C Tc=25°C 379 A
Tc=80°C 286 A
ICnom 300 A
ICRM ICRM = 2xICnom 600 A
VGES -20 ... 20 V
tpsc
VCC = 360 V
VGE ≤ 15 V
Tj= 150 °C
VCES ≤ 600 V
6µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 419 A
Tc=80°C 307 A
IFnom 300 A
IFRM IFRM = 2xIFnom 600 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 1400 A
Tj-40 ... 175 °C
Module
It(RMS) 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=300A
VGE =15V
chiplevel
Tj=25°C 1.45 1.85 V
Tj= 150 °C 1.7 2.1 V
VCE0 Tj=25°C 0.9 1 V
Tj= 150 °C 0.85 0.9 V
rCE VGE =15V Tj=25°C 1.8 2.8 mΩ
Tj= 150 °C 2.8 4.0 mΩ
VGE(th) VGE=VCE, IC=4.8mA 5 5.8 6.5 V
ICES VGE =0V
VCE =600V
Tj=25°C 0.15 0.45 mA
Tj= 150 °C mA
Cies VCE =25V
VGE =0V
f=1MHz 18.5 nF
Coes f=1MHz 1.15 nF
Cres f=1MHz 0.55 nF
QGVGE =- 8 V...+ 15 V 2400 nC
RGint Tj=25°C 1.00 Ω
td(on) VCC = 300 V
IC=300A
Tj= 150 °C
RG on =5.1Ω
RG off =5.1Ω
110 ns
tr85 ns
Eon 11.5 mJ
td(off) 820 ns
tf70 ns
Eoff 15 mJ
Rth(j-c) per IGBT 0.16 K/W
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SEMiX302GB066HDs
2 Rev. 0 – 16.04.2010 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF=300A
VGE =0V
chip
Tj=25°C 1.4 1.60 V
Tj= 150 °C 1.4 1.6 V
VF0 Tj=25°C 0.9 1 1.1 V
Tj= 150 °C 0.75 0.85 0.95 V
rFTj=25°C 1.0 1.3 1.7 mΩ
Tj= 150 °C 1.5 1.8 2.2 mΩ
IRRM IF=300A
di/dtoff = 3600 A/µs
VGE =-8V
VCC = 300 V
Tj= 150 °C 240 A
Qrr Tj= 150 °C 35 µC
Err Tj= 150 °C 7.5 mJ
Rth(j-c) per diode 0.19 K/W
Module
LCE 18 nH
RCC'+EE' res., terminal-chip TC=25°C 0.7 mΩ
TC= 125 °C 1mΩ
Rth(c-s) per module 0.045 K/W
Msto heat sink (M5) 3 5 Nm
Mtto terminals (M6) 2.5 5 Nm
w250 g
Temperature sensor
R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2% K
SEMiX® 2s
GB
Trench IGBT Modules
SEMiX302GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
http://store.iiic.cc/
SEMiX302GB066HDs
© by SEMIKRON Rev. 0 – 16.04.2010 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
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SEMiX302GB066HDs
4 Rev. 0 – 16.04.2010 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
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SEMiX302GB066HDs
© by SEMIKRON Rev. 0 – 16.04.2010 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
SEMiX 2s
spring configuration
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