Die Datasheet GB20SHT12-CAL
Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 4
High Temperature Silicon Carbide
Power Schottky Diode
Features
1200 V Schottky rectifier
210 °C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of VF
Temperature independent switching behavior
Lowest figure of merit QC/IF
Available screened to Mil-PRF-19500
Die Size = 2.95 mm x 2.95 mm
Advantages Applications
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
Repetitive peak reverse voltage VRRM 1200 V
Continuous forward current IF TC= 25 °C, RthJC = 1.08 30 A
Continuous forward current IF TC≤ 190 °C, RthJC = 1.08 9.4 A
RMS forward current IF
(
RMS
)
TC≤ 190 °C, RthJC = 1.08 16 A
Surge non-repetitive forward current, Half Sine
Wave IF,SM TC = 25 °C, tP = 10 ms 65 A
Non-repetitive peak forward current IF,max TC= 25 °C, tP = 10 µs 280 A
I2t value ∫i2dt TC= 25 °C, tP = 10 ms 20 A2S
Power dissipation Ptot TC= 25 °C, , RthJC = 1.08 230 W
Operating and storage temperature Tj , Tstg -55 to 210 °C
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Diode forward voltage VF IF = 10 A, Tj = 25 °C 1.6 V
IF = 10 A, Tj = 210 °C 2.3
Reverse current IR VR= 1200 V, Tj = 25 °C 1 20 µA
VR= 1200 V, Tj = 210 °C 55 300
Total capacitive charge QC IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 210 °C
VR = 400 V 58 nC
VR = 960 V 95
Switching time ts VR = 400 V < 49 ns
VR = 960 V
Total capacitance C
VR= 1 V, f = 1 MHz, Tj = 25 °C 884
pF
VR= 400 V, f = 1 MHz, Tj = 25 °C 79
VR= 1000 V, f = 1 MHz, Tj = 25 °C 63
VRRM = 1200 V
IF @ 25 oC = 30 A
QC = 58 nC
Die Datasheet GB20SHT12-CAL
Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg2 of 4
Figures:
Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics
Figure 3: Typical Junction Capacitance vs Reverse Voltage
Characteristics Figure 4: Typical Capacitive Energy vs Reverse Voltage
Characteristics
Die Datasheet GB20SHT12-CAL
Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg3 of 4
Mechanical Parameters
Die Dimensions 2.95 x 2.95
mm2
A
node pad size 2.69 x 2.69
Die Area total / active 8.70/7.02
Die Thickness 360 µm
Wafer Size 100 mm
Flat Position 0 deg
Die Frontside Passivation Polyimide
A
node Pad Metallization 4000 nm Al
Backside Cathode Metallization 400 nm Ni + 200 nm Au
Die Attach Electrically conductive glue or solder
Wire Bond Al ≤ 380 µm
Reject ink dot size Φ ≥ 0.3 mm
Recommended storage environment
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
Chip Dimensions:
DIE
A
[mm] 2.95
B
[mm] 2.95
METAL
C
[mm] 2.69
D
[mm] 2.69
WIRE
BONDABLE
E
[mm] 2.65
F
[mm] 2.65
Die Datasheet GB20SHT12-CAL
Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg4 of 4
Revision History
Date Revision Comments Supersedes
2015/02/09 1 Inserted Mechanical Parameters
2012/04/03 0 Initial release
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Die Datasheet GB20SHT12-CAL
Sep 2013 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 1
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB20SHT12-CAL_SPICE.pdf) into
LTSPICE (version 4) software for simulation of the GB20SHT12-CAL.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.0 $
* $Date: 05-SEP-2013 $
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB20SHT12-CAL SPICE Model
*
.SUBCKT GB20SHT12 ANODE KATHODE
D1 ANODE KATHODE GB20SHT12_25C; Call the Schottky Diode Model
D2 ANODE KATHODE GB20SHT12_PIN; Call the PiN Diode Model
. MODEL GB20SHT12_25C D
+ IS 1.74E-13 RS 0.05105
+ TRS1 0.005 TRS2 1.68E-5
+ N 1.2637323 IKF 1.884319
+ EG 1.2 XTI 3
+ CJO 1.15E-09 VJ 0.44
+ M 1.5 FC 0.5
+ TT 1.00E-10 BV 1200
+ IBV 1.00E-03 VPK 1200
+ IAVE 20 TYPE SiC_Schottky
+ MFG GeneSiC_Semiconductor
. MODEL GB20SHT12_PIN D
+ IS 5.15E-15 RS 0.2
+ N 3.1605 IKF 0.00055844
+ EG 3.23 XTI 3
+ FC 0.5 TT 0
+ BV 1200 IBV 1.00E-03
+ VPK 1200 IAVE 20
+ TYPE SiC_PiN
.ENDS
*
* End of GB20SHT12-CAL SPICE Model
