2MBI200SB-120 IGBT Modules IGBT MODULE (S series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions Ic Continuous Collector current Ic pulse 1ms Collector power dissipation Junction temperature Storage temperature Isolation voltage (*1) -Ic -Ic pulse Pc Tj Tstg Viso Mounting (*2) Terminals (*2) Screw torque Tc=25C Tc=80C Tc=25C Tc=80C 1ms 1 device AC : 1min. Maximum ratings 1200 20 300 200 600 400 200 400 1500 150 -40 to +125 2500 3.5 4.5 Units V V A W C C V N*m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 2.5-3.5 N*m (M5 or M6), Terminals : 3.5-4.5 N*m (M6) Electrical characteristics (at Tj= 25C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage I CES I GES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE = 20V VCE = 20V, I C = 200mA Collector-Emitter saturation voltage VCE (sat) VGE = 15V I C = 200A Input capacitance Output capacitance Reverse transfer capacitance Cies Coes Cres ton tr tr (i) toff tf VGE = 0V VCE = 10V f = 1MHz Forward on voltage VF I F = 200A Reverse recovery time trr I F = 200A Items Symbols Conditions Thermal resistance (1device) Rth(j-c) Contact thermal resistance Rth(c-f) Turn-on time Turn-off time Tj=25C Tj=125C VCC = 600V I C = 200A VGE = 15V RG = 4.7 Tj=25C Tj=125C Characteristics min. typ. max. 1.0 0.4 5.5 7.2 8.5 2.3 2.6 2.8 24000 5000 4400 0.35 1.2 0.25 0.6 0.1 0.45 1.0 0.08 0.3 2.3 3.0 2.0 0.35 Units mA A V V pF s V s Thermal resistance characteristics IGBT FWD with Thermal Compound (*3) Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.085 0.18 0.025 - Units C/W 2MBI200SB-120 IGBT Modules Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25C (typ.) 500 VGE= 20V 15V 12V 400 Collector current : Ic [ A ] Collector current : Ic [ A ] 500 VGE= 20V 15V 12V 400 Collector current vs. Collector-Emiiter voltage Tj= 125C (typ.) 300 10V 200 100 300 10V 200 100 8V 0 1 2 3 4 0 5 0 Collector - Emitter voltage : VCE [ V ] 5 10 8 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 4 Tj= 125C Tj= 25C 300 200 100 0 1 2 3 4 6 4 Ic= 400A 0 5 Collector - Emitter voltage : VCE [ V ] 10000 5000 Coes 500 Cres 0 5 10 15 20 25 5 10 15 20 25 Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj= 25C Cies 1000 I c=100A Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 100000 Ic= 200A 2 Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 3 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 400 0 2 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 500 1 30 1000 25 800 20 600 15 400 10 200 5 0 35 Collector - Emitter voltage : VCE [ V ] 0 500 1000 Gate charge : Qg [ nC ] 2 1500 0 2000 Gate - Emitter voltage : VGE [ V ] 0 8V 2MBI200SB-120 IGBT Modules Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 4.7, Tj= 25C 1000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 4.7, Tj= 125C 1000 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 tf 50 0 100 200 500 t on tr tf 100 50 300 0 100 Collector current : Ic [ A ] 200 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=15V, Tj= 25C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=4.7 5000 60 ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff tr 1000 500 100 tf Eon(125C) 40 Eon(25C) Eoff(125C) 20 Eoff(25C) Err(125C) Err(125C) 50 1 10 0 100 0 100 300 400 Reverse bias safe operating area +VGE=15V, -VGE 15V, Rg 4.7, Tj 125C Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=15V, Tj= 125C 160 200 Collector current : Ic [ A ] Gate resistance : Rg [ ] 450 350 120 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 400 Eon 80 40 Eoff 300 250 200 150 100 50 Er r 0 0 1 10 100 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] Gate resistance : Rg [ ] 3 1200 1400 2MBI200SB-120 IGBT Modules Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=4.7 Forward current vs. Forward on voltage (typ.) 500 500 Tj=25C Tj=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 400 300 200 100 0 0 1 2 3 Transient thermal resistance Thermal resistanse : Rth(j-c) [ C/W ] FWD 0.1 IGBT 0.01 0.01 0.1 Irr(25C) trr(25C) 0 100 200 Forward current : IF [ A ] 1 1E-3 0 .001 trr(125C) 100 10 4 Forward on voltage : VF [ V ] 0.05 Irr(125C) 1 Pulse width : Pw [ sec ] 4 300 2MBI200SB-120 1. Outline Drawing ( Unit : mm ) 2MBI200SB-120 IGBT Modules Outline Drawings, mm 2. Equivalent circuit Equivalent Circuit Schematic MS5F 4921 3 8 5 2MBI200SB-120 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. Copyright (c)1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6