1
2MBI200SB-120 IGBT Modules
IGBT MODULE (S series)
1200V / 200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=25°C 300
A
Tc=80°C 200
Ic pulse 1ms Tc=25°C 600
Tc=80°C 400
-Ic 200
-Ic pulse 1ms 400
Collector power dissipation Pc 1 device 1500 W
Junction temperature Tj 150 °C
Storage temperature Tstg -40 to +125 °C
Isolation voltage (*1) Viso AC : 1min. 2500 V
Screw torque Mounting (*2) 3.5 N·m
Terminals (*2) 4.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Symbols Conditions Characteristics Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 0.4 µA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 200mA 5.5 7.2 8.5 V
Collector-Emitter saturation voltage VCE (sat) VGE = 15V
IC = 200A
Tj=25°C - 2.3 2.6 V
Tj=125°C - 2.8 -
Input capacitance Cies VGE = 0V
VCE = 10V
f = 1MHz
- 24000 -
pFOutput capacitance Coes - 5000 -
Reverse transfer capacitance Cres - 4400 -
Turn-on time
ton
VCC = 600V
IC = 200A
VGE = ±15V
RG = 4.7Ω
- 0.35 1.2
µs
tr - 0.25 0.6
tr (i) - 0.1 -
Turn-off time toff - 0.45 1.0
tf - 0.08 0.3
Forward on voltage VFIF = 200A Tj=25°C - 2.3 3.0 V
Tj=125°C - 2.0 -
Reverse recovery time trr IF = 200A - - 0.35 µs
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c) IGBT - - 0.085
°C/WFWD - - 0.18
Contact thermal resistance Rth(c-f) with Thermal Compound (*3) - 0.025 -
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
2MBI200SB-120
2
IGBT Modules
Characteristics (Representative)
0 1 2 3 4 5
0
100
200
300
400
500
8V
10V
12V15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0 1 2 3 4 5
0
100
200
300
400
500
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0 1 2 3 4 5
0
100
200
300
400
500
Tj= 25°C Tj= 125°C
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5 10 15 20 25
0
2
4
6
8
10
I c=100A
Ic= 200A
Ic= 400A
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
500
1000
5000
1 00 00
1 00 000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 500 1000 1500 2000
0
200
400
600
800
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=200A, Tj= 25°C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
3
3
IGBT Modules
2MBI200SB-120
0 100 200 300
50
100
500
1000
ton
t r
toff
t f
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 4.7Ω, Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0 100 200 300
50
100
500
1000
t f
t r
t on
toff
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 4.7Ω, Tj= 125°C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
1 10 100
50
100
500
1000
5000
toff
ton
t r
t f
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C
Gate resistance : Rg [ Ω ]
Switching time : ton, tr, toff, tf [ nsec ]
0 100 200 300 400
0
20
40
60
Eoff(25°C)
Eon(25°C)
Err(125°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
1 10 100
0
40
80
120
160
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ Ω ]
Eon
Er r
Eoff
0 200 400 600 800 1000 1200 1400
0
50
100
150
200
250
300
350
400
450
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
Reverse bias safe operating area
+VGE=15V, -VGE 15V, Rg 4.7Ω, Tj 125°C
4
2MBI200SB-120
4
IGBT Modules
0 1 2 3 4
0
100
200
300
400
500
Tj=25°C
Tj=125°C
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0 100 200 300
10
100
500
Irr(125°C)
Irr(25°C)
trr(25°C)
trr(125°C)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001 0.01 0. 1 1
1E-3
0.01
0.05
0.1
1
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
5
5
IGBT Modules
2MBI200SB-120
Equivalent Circuit Schematic
Outline Drawings, mm
8
MS5F 4921 3
2MBI200SB-120
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
6
2MBI200SB-120 IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
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