DPG60C400QB HiPerFRED VRRM = 400 V I FAV = 2x 30 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C400QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline compatible with TO-247 RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a DPG60C400QB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 400 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 400 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 400 V TVJ = 25C 1 A VR = 400 V TVJ = 150C 0.2 mA TVJ = 25C 1.41 V 1.69 V 1.13 V IF = forward voltage drop min. 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 C TC = 135C rectangular 1.46 V T VJ = 175 C 30 A TVJ = 175 C 0.76 V d = 0.5 for power loss calculation only 10.7 m 0.95 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 200 V f = 1 MHz TVJ = 25C 39 pF I RM max. reverse recovery current TVJ = 25 C 4 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.25 TC = 25C 30 A; VR = 270 V -di F /dt = 200 A/s 160 360 W A TVJ = 125C 8.5 A TVJ = 25 C 45 ns TVJ = 125C 85 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a DPG60C400QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 C -55 150 C 150 C 1) Weight 5 MD mounting torque FC mounting force with clip Product Marking Logo Part No. Assembly Line Assembly Code g 0.8 1.2 Nm 20 120 N Part number D P G 60 C 400 QB IXYS Zyyww = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) abcd Date Code Ordering Standard Part Number DPG60C400QB Similar Part DPG60C400HB DPG80C400HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C400QB Package TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 501908 Voltage class 400 400 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.76 V R 0 max slope resistance * 8.1 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a DPG60C400QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a DPG60C400QB Fast Diode 1.0 80 TVJ = 125C 20 V = 270 V R 60 A TVJ = 125C VR = 270 V 70 30 A 0.8 60 30 A 50 IF 60 A Qrr TVJ = 150C IRR 0.6 40 15 A [C] [A] 30 12 [A] 0.4 20 15 A 16 8 25C 10 0.2 0.0 0.4 0.8 1.2 1.6 4 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 140 1.6 700 TVJ = 125C VR = 270 V 1.4 tfr 600 120 1.2 600 TVJ = 125C VR = 270 V IF = 30 A 16 VFR 14 12 100 tfr 400 10 [ns] 80 [ns] 300 8 15 A 30 A 200 6 60 A 100 4 trr 0.6 400 500 1.0 Kf 0.8 200 -diF /dt [A/s] Fig. 3 Typ. reverse recovery current IRR versus -diF /dt -diF /dt [A/s] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt VFR [V] IRR 0.4 60 Qrr 0.2 0.0 40 0 40 80 120 160 0 0 60 A 40 600 0 400 2 600 Fig. 6 Typ. forward recov. voltage VFR & time tfr versus diF /dt 1.0 30 A 0.8 15 A ZthJC 0.6 30 200 -diF /dt [A/s] Fig. 5 Typ. reverse recov. time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qrr, IRR versus TVJ TVJ = 125C VR = 270 V 400 -diF /dt [A/s] TVJ [C] 50 200 Erec [K/W] 0.4 20 [J] 10 0.2 0 0.0 0 200 400 600 -diF /dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 10 100 1000 1000 0 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a