DPG60C400QB
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
1 2 3
Part number
DPG60C400QB
Backside: cathode
FAV
rr
tns45
RRM
30
400
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-3P
● Industry standard outline
compatible with TO-247
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C400QB
n
s
4
A
T
VJ
=°C
reverse recovery time
A
8.5
45
85
n
s
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V270
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.41
R0.95 K/
W
R
min.
30
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
135
P
tot
160
W
T = 25°C
C
RK/
W
30
400
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.69
T = 25°C
VJ
150
V
F0
V
0.76T = °C
VJ
175
r
F
10.7 m
Ω
V
1.13T = °C
VJ
I = A
F
V
30
1.46
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µ
A
150
V
RRM
V
400
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
39
j
unction capacitance V = V200 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
360
A
400
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
400
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C400QB
Ratings
Product Mar
k
i
n
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
D
P
G
60
C
400
QB
Part number
Diode
HiPerFRED
extreme fast
Common Cathode
TO-3P (3)
=
=
=
DPG80C400HB TO-247AD (3) 400
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g5
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 50 A
per terminal
150-55
TO-3P
Similar Part Package Voltage class
DPG60C400HB TO-247AD (3) 400
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DPG60C400QB 501908Tube 30DPG60C400QBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.76
mΩ
V
0 max
R
0 max
slope resistance * 8.1
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C400QB
1 2 3
Outlines TO-3P
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C400QB
0.0 0.4 0.8 1.2 1.6 2.0
10
20
30
40
50
60
70
80
0 200 400 600
40
60
80
100
120
140
1 10 100 1000 1000 0
0.0
0.2
0.4
0.6
0.8
1.0
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Kf
T
VJ
[°C] -diF/dt [A/μs]
t[ms]
0 200 400 600
0
100
200
300
400
500
600
700
2
4
6
8
10
12
14
16
0 200 400 600
4
8
12
16
20
0 200 400 600
0.2
0.4
0.6
0.8
1.0
Q
rr
[μC]
V
F
id-]V[
F
/dt [A/μs]
Z
thJC
[K/W]
I
RR
Q
rr
V
FR
t
fr
T
VJ
=150°C
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recovery current
I
RR
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
,I
RR
versus T
VJ
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recov. voltage
V
FR
&timet
fr
versus di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[A]
-diF/dt [A/μs]
I
RR
[A]
t
rr
[ns]
-di
F
/dt [A/μs]
t
fr
[ns]
V
FR
[V]
0 200 400 600
0
10
20
30
40
50
E
rec
[μJ]
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
T
VJ
= 125°C
V
R
=270 V
T
VJ
=125°C
V
R
= 270 V
T
VJ
=125°C
V
R
= 270 V
T
VJ
= 125°C
V
R
=270 V
I
F
= 30 A
T
VJ
=125°C
V
R
= 270 V
60 A
30 A
15 A
15 A
30 A
60 A
60 A
30 A
15 A
60 A
30 A
15 A
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
