AP02N60I Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Repetitive Avalanche Rated D Fast Switching Simple Drive Requirement G BVDSS 600V RDS(ON) 8 ID 2A S Description The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, VGS @ 10V 2 A ID@TC=100 Continuous Drain Current, VGS @ 10V 1.26 A 1 IDM Pulsed Drain Current 3.6 A PD@TC=25 Total Power Dissipation 22 W 0.176 W/ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy 80 mJ IAR Avalanche Current 2 A EAR Repetitive Avalanche Energy 2 mJ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 5.7 /W Rthj-a Thermal Resistance Junction-ambient Max. 62 /W Data & specifications subject to change without notice 200117032 AP02N60I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.6 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A - - 8 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=20V, ID=1A - 0.2 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS= 30V - - 100 nA ID=2A - 14 - nC VGS=0V, ID=1mA o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC VDS=300V - 9.5 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=2A - 12 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 21 - ns tf Fall Time RD=150 - 9 - ns Ciss Input Capacitance VGS=0V - 155 - pF Coss Output Capacitance VDS=25V - 27 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF Min. Typ. - - 2 A - - 3.6 A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.5V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 3 Forward On Voltage 1 Tj=25, IS=2A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25 , IAS=2A. 3.Pulse width <300us , duty cycle <2%. Max. Units AP02N60I 1.5 T C =25 o C 10V 6.0V T C =150 o C 0.8 10V 6.0V 5.5V ID , Drain Current (A) ID , Drain Current (A) 5.5V 1 5.0V 0.5 0.6 5.0V 0.4 V GS =4.5V 0.2 V GS =4.5V 0 0 0 5 10 15 0 20 5 10 15 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.2 I D =1A V GS =10V 2.4 1.1 Normalized R DS(ON) Normalized BVDSS (V) 2 1 1.6 1.2 0.8 0.9 0.4 0 0.8 -50 0 50 100 T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 150 -50 0 50 100 o T j , Junction Temperature ( C ) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP02N60I 2.4 30 20 1.6 PD (W) ID , Drain Current (A) 2 1.2 10 0.8 0.4 0 0 25 50 75 100 125 0 150 50 o 100 150 o T c , Case Temperature ( C ) Tc, Case Temperature ( C ) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 10 1 Normalized Thermal Response (R thjc) Duty Factor = 0.5 100us 1 ID (A) 1ms 10ms 100ms 0.1 T C =25 o C Single Pulse 0.01 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP02N60I f=1.0MHz 1000 16 I D =2A V DS =320V V DS =400V 12 V DS =480V 10 Ciss C (pF) VGS , Gate to Source Voltage (V) 14 8 100 6 4 Coss 2 Crss 10 0 0 2 4 6 8 10 12 14 16 18 1 20 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 5 100 4 10 3 VGS(th) (V) T j = 25 o C IS (A) T j = 150 o C 2 1 1 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 T j , Junction Temperature ( o C ) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP02N60I VDS 90% RD VDS D 0.5x RATED VDS G RG TO THE OSCILLOSCOPE 10% + S 10 V VGS VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 10V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q