Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Repetitive Avalanche Rated BVDSS 600V
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▼ Fast Switching RDS(ON) 8Ω
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▼ Simple Drive Requirement ID2A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
EAR Repetitive Avalanche Energy mJ
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 5.7 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice 200117032
AP02N60I
80
-55 to 150
Parameter
2
2
1.26
Parameter Rating
600
Storage Temperature Range -55 to 150
3.6
22
Linear Derating Factor 0.176
2
± 30
GDSTO-220CFM(I)
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A - - 8 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=20V, ID=1A - 0.2 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge3ID=2A - 14 - nC
Qgs Gate-Source Charge VDS=480V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC
td(on) Turn-on Delay Time3VDS=300V - 9.5 - ns
trRise Time ID=2A - 12 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 21 - ns
tfFall Time RD=150Ω-9-
ns
Ciss Input Capacitance VGS=0V - 155 - pF
Coss Output Capacitance VDS=25V - 27 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 2 A
ISM Pulsed Source Current ( Body Diode )1- - 3.6 A
VSD Forward On Voltage3Tj=25℃, IS=2A, VGS=0V - - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω , IAS=2A.
3.Pulse width <300us , duty cycle <2%.
AP02N60I
± 30V ±100
AP02N60I
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normal ized B VDSS (V)
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normal ized RDS(ON)
VGS=10V
I
D=1A
0
0.5
1
1.5
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=25oC 10V
5.5V
6.0V
5.0V
VGS=4.5V
0
0.2
0.4
0.6
0.8
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=150 oC 10V
5.5V
6.0V
5.0V
VGS=4.5V
AP02N60I
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
0
10
20
30
0 50 100 150
Tc, Case Temperature ( oC )
PD (W)
0
0.4
0.8
1.2
1.6
2
2.4
25 50 75 100 125 150
Tc , Case Temperature ( oC )
ID , Drain Curre nt (A)
0.01
0.1
1
10
1 10 100 1000 10000
VDS (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
AP02N60I
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
1
2
3
4
5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
VGS(th) (V)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD (V)
IS (A)
Tj = 150 oCT
j = 25 oC
0
2
4
6
8
10
12
14
16
02468101214161820
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=2A VDS=320V
VDS=400V
VDS=480V
10
100
1000
1 5 9 1317212529
VDS (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
AP02N60I
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.5x RATED VDS
TO THE
OSCILLOSCOPE
-
+10 V
D
G
S
VDS
VGS
RG
RD
0.8 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
ID
IG
1~ 3 m
A
