Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS500L
500 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The MDS500L is a high power COMMON BASE bipolar transistor. It is
designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band.
The transistor includes input and output prematch for broadband performance.
The device has gold thin-film metallization and diffused ballasting in a
hermetically sealed package for proven highest MTTF.
CASE OUTLINE
55ST Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C1 833 W
Maximum Voltage and Current
Collector to Emitter Voltage (BVces) 70 V
Emitter to Base Voltage (BVebo) 3.5 V
Peak Collector Current (Ic) 24 A
Maximum Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°
°°
°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Out 500 W
Pin Power Input 60 W
Pg Power Gain 9.2 dB
ηc Collector Efficiency
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2 50 %
VSWR Load Mismatch Tolerance 2:1
Pd1 Pulse Droop 0.8 dB
Trise1 Rise Time 100 nSec
FUNCTIONAL CHARACTERISTICS @ 25°
°°
°C
BVebo Emitter to Base Breakdown Ie = 15 mA 3.0 V
BVces Collector to Emitter Breakdown Ic = 50 mA 70 V
BVcbo Collector to Base Breakdown Ic = 50 mA 70 V
Ices Collector to Emitter Leakage Vce = 50V 15 mA
hFE DC – Current Gain Vce = 5V, Ic = 1.0 A 20
θjc1 Thermal Resistance 0.08 °C/W
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: ELM Burst: 32µSec ON/ 18µSec OFF x 48, repeated at 23mSec
REV C – March 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS500L SAMPLE RF DATA (SN#7-23; WO#51157X)
Pout vs Pin (ELM PULSE MOD; WO#51157X)
40
140
240
340
440
540
0 102030405060708090
Pin(W)
Pout(W)
1030MHz
1090MHz
Gain vs Pin (ELM PULSE MOD; WO#51157X)
6.50
7.50
8.50
9.50
10.50
0 102030405060708090
Pin(W)
Gain(dB)
1030MHz
1090MHz
Effic vs Pin (ELM PULSE MOD; WO#51157X)
20.0
30.0
40.0
50.0
60.0
70.0
0 10203040 5060708090
Pin(W)
Effic(%)
1030MHz
1090MHz
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
IMPEDANCE DATA
FREQUENCY Zsource (ohms) Zload (ohms)
1030 1.90 – j1.60 1.79 – j1.51
1090 2.10 – j1.61 2.05 – j1.76
1150 2.26 – j1.82 2.21 – j2.21
Zsource Zload
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS500L
