Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
64K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speedaccesstime:35ns,45ns,55ns
• CMOSlowpoweroperation:
15mW(typical)operating
1.5µW(typical)CMOSstandby
• TTLcompatibleinterfacelevels
• Singlepowersupply
1.65V--2.2VVdd (62WV6416dALL)
2.3V--3.6VVdd (65WV6416dBLL)
• Fullystaticoperation:noclockorrefresh
required
• Threestateoutputs
• Datacontrolforupperandlowerbytes
• Industrialandautomotivetemperaturesupport
• 2CSOptionAvailable
• Lead-freeavailable
DESCRIPTION
TheISSIIS62/65WV6416DALLandIS62/65WV6416DBLL
arehigh-speed,1MbitstaticRAMsorganizedas64Kwords
by16bits.ItisfabricatedusingISSI'shigh-performance
CMOStechnology.This highly reliableprocesscoupled
with innovative circuit design techniques, yields high-
performanceandlowpowerconsumptiondevices.
WhenCS1isHIGH(deselected)orwhenCS2isLOW
(deselected)orwhen CS1isLOW,CS2isHIGHandboth
LBandUBareHIGH,thedeviceassumesastandbymode
atwhichthepowerdissipationcanbereduceddownwith
CMOSinputlevels.
EasymemoryexpansionisprovidedbyusingChipEnable
andOutputEnableinputs.TheactiveLOWWriteEnable
(WE)controlsbothwritingandreadingofthememory.A
databyteallowsUpperByte(UB)andLowerByte(LB)
access.
TheIS62/65WV6416DALLandIS62/65WV6416DBLLare
packagedintheJEDECstandard48-pinminiBGA(6mm
x8mm)and44-PinTSOP(TYPEII).
FUNCTIONAL BLOCK DIAGRAM
DECEMBER 2012
A0-A15
CS1
OE
WE
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
CS2
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
PIN CONFIGURATIONS
48-Pin mini BGA (6mm x 8mm)
(Package Code B)
PIN DESCRIPTIONS
A0-A15 AddressInputs
I/O0-I/O15 DataInputs/Outputs
CS1,CS2 ChipEnableInput
OE OutputEnableInput
WE WriteEnableInput
LB Lower-byteControl(I/O0-I/O7)
UB Upper-byteControl(I/O8-I/O15)
NC NoConnection
Vdd Power
GND Ground
48-Pin mini BGA (6mm x 8mm)
2 CS Option (Package Code B2)
44-Pin mini TSOP (Type II)
(Package Code T)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB OE A0 A1 A2 CS2
I/O8UB A3 A4 CS1 I/O0
I/O9I/O10 A5 A6 I/O1I/O2
GND I/O11 NC A7 I/O3VDD
VDD I/O12 NC NC I/O4GND
I/O14 I/O13 A14 A15 I/O5I/O6
I/O15 NC A12 A13 WE I/O7
NC A8 A9 A10 A11 NC
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB OE A0 A1 A2 NC
I/O
8
UB A3 A4 CSI I/O
0
I/O
9
I/O
10
A5 A6 I/O
1
I/O
2
GND I/O
11
NC A7 I/O
3
V
DD
V
DD
I/O
12
NC NC I/O
4
GND
I/O
14
I/O
13
A14 A15 I/O
5
I/O
6
I/O
15
NC A12 A13 WE I/O
7
NC A8 A9 A10 A11 NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
Integrated Silicon Solution, Inc. — www.issi.com3
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
Vterm TerminalVoltagewithRespecttoGND –0.5toVdd+0.5 V
Vdd VddRelatestoGND –0.3to4.0 V
tstg StorageTemperature –65to+150 °C
Pt PowerDissipation 1.0 W
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto
thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions
abovethoseindicatedintheoperationalsectionsofthisspecicationisnotimplied.Exposuretoabsolute
maximumratingconditionsforextendedperiodsmayaffectreliability.
CAPACITANCE(1,2)
Symbol Parameter Conditions Max. Unit
Cin InputCapacitance Vin = 0V 6 pF
Ci/O Input/OutputCapacitance VOut = 0V 8 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:TA = 25°C, f=1MHz,Vdd=3.3V.
TRUTH TABLE
I/O PIN
Mode WE CS1 CS2 OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current
NotSelected X H X X X X High-Z High-Z isB1, isB2
X X L X X X High-Z High-Z isB1, isB2
X X X X H H High-Z High-Z isB1, isB2
OutputDisabled H L H H L X High-Z High-Z iCC
H L H H X L High-Z High-Z iCC
Read H L H L L H dOut High-Z iCC
H L H L H L High-Z dOut
H L H L L L dOut dOut
Write L L H X L H din High-Z iCC
L L H X H L High-Z din
L L H X L L din din
4 Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
AC TEST LOADS
Figure 1.
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
Figure 2.
AC TEST CONDITIONS
Parameter Unit Unit Unit
(2.3V-3.6V) (3.3V + 5%) (1.65V-2.2V)
InputPulseLevel 0.4VtoVdd-0.3V 0.4VtoVdd-0.3V 0.4VtoVdd-0.3V
InputRiseandFallTimes 1V/ns 1V/ns 1V/ns
InputandOutputTiming VDD/2 VDD+0.05 0.9V
andReferenceLevel(VRef)2
OutputLoad SeeFigures1and2 SeeFigures1and2 SeeFigures1and2
R1( Ω ) 317 317 13500
R2( Ω ) 351 351 10800
Vtm(V) 3.3V 3.3V 1.8V
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
Integrated Silicon Solution, Inc. — www.issi.com5
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 2.3V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
VOH OutputHIGHVoltage Vdd = Min.,iOH = –1.0mA 1.8 — V
VOL OutputLOWVoltage Vdd = Min.,iOL = 2.1mA — 0.4 V
ViH InputHIGHVoltage 2.0 Vdd + 0.3 V
ViL InputLOWVoltage(1) –0.3 0.8 V
iLi InputLeakage GND≤ Vin ≤ Vdd –1 1 µA
iLO OutputLeakage GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1. ViL (min.)= –0.3VDC;ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
ViH (max.)= Vdd + 0.3V dC;ViH (max.)= Vdd + 2.0V AC(pulsewidth<10ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 3.3V + 5%
Symbol Parameter Test Conditions Min. Max. Unit
VOH OutputHIGHVoltage Vdd = Min.,iOH = –1mA 2.4 — V
VOL OutputLOWVoltage Vdd = Min.,iOL = 2.1mA — 0.4 V
ViH InputHIGHVoltage 2 Vdd + 0.3 V
ViL InputLOWVoltage(1) –0.3 0.8 V
iLi InputLeakage GND≤ Vin ≤ Vdd –1 1 µA
iLO OutputLeakage GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1. ViL (min.)= –0.3VDC;ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
ViH (max.)= Vdd + 0.3V dC;ViH (max.)= Vdd + 2.0V AC(pulsewidth<10ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 1.65V-2.2V
Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH OutputHIGHVoltage iOH = -0.1mA 1.65-2.2V 1.4 — V
VOL OutputLOWVoltage iOL = 0.1mA 1.65-2.2V — 0.2 V
ViH InputHIGHVoltage 1.65-2.2V 1.4 Vdd + 0.2 V
ViL(1) InputLOWVoltage 1.65-2.2V –0.2 0.4 V
iLi InputLeakage GND≤ Vin ≤ Vdd –1 1 µA
iLO OutputLeakage GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1. ViL (min.)= –0.3VDC;ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
ViH (max.)= Vdd + 0.3V dC;ViH (max.)= Vdd + 2.0V AC(pulsewidth<10ns).Not100%tested.
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
-35 -45 -55
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
iCC VddDynamicOperating Vdd = Max., Com. — 8 — 6 — 5 mA
SupplyCurrent iOut = 0 mA,f=fmAX Ind. — 12 — 8 — 7
CE = ViL Auto. — 15 — 12 — 12
Vin ≥ Vdd – 0.3V, or typ.(2) 5
Vin ≤ 0.4V
iCC1 Operating Vdd = Max., Com. — 2.5 — 2.5 — 2.5 mA
SupplyCurrent iOut = 0 mA,f=0 Ind. — 2.5 — 2.5 — 2.5
CE = ViL Auto. — 5 — 5 — 5
Vin ≥ Vdd – 0.3V, or
Vin ≤ 0.4V
isB2 CMOSStandby Vdd = Max., Com.
— 2 — 2 — 2
µA
Current(CMOSInputs) CS1
≥
Vdd – 0.2V, Ind.
— 4 — 4
— 4
CS2
≤0.2V,
Auto
—
18
—
18
— 18
Vin
≥
Vdd – 0.2V, or typ.(2) 0.6
Vin
≤
0.2V, f=0
OR
ULBControl Vdd=Max.,CS1=ViL, Cs2=ViH
Vin ≤0.2V,f=0;UB / LB=Vdd–0.2V
Note:
1.Atf=fmAX,addressanddatainputsarecyclingatthemaximumfrequency,f=0meansnoinputlineschange.
2.TypicalvaluesaremeasuredatVdd=3.0V,TA=25oCandnot100%tested.
OPERATING RANGE (VDD)
Range Ambient Temperature VDD (45 nS) VDD (35 nS)
Commercial 0°Cto+70°C 2.3V-3.6V 3.3V+5%
Industrial –40°Cto+85°C 2.3V-3.6V 3.3V+5%
OPERATING RANGE (VDD)
Range Ambient Temperature VDD Speed
Commercial 0°Cto+70°C 1.65V-2.2V 45ns
Industrial –40°Cto+85°C 1.65V-2.2V 55ns
Automotive –40°Cto+125°C 1.65V-2.2V 55ns
OPERATING RANGE (VDD)
Range Ambient Temperature VDD (45 nS)
Automotive –40°Cto+125°C 2.3V-3.6V
Integrated Silicon Solution, Inc. — www.issi.com7
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
35 ns 45 ns 55 ns
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
trC ReadCycleTime 35 — 45 — 55 — ns
tAA AddressAccessTime — 35 — 45 — 55 ns
tOHA OutputHoldTime 10 — 10 — 10 — ns
tACs1/tACs2 CS1/CS2AccessTime — 35 — 45 — 55 ns
tdOe OEAccessTime — 10 — 20 — 25 ns
tHzOe(2) OEtoHigh-ZOutput 0 10 0 15 0 20 ns
tLzOe(2) OEtoLow-ZOutput 3 — 5 — 5 — ns
tHzCs1/tHzCs2(2) CS1/CS2toHigh-ZOutput 0 10 0 15 0 20 ns
tLzCs1/tLzCs2(2) CS1/CS2toLow-ZOutput 5 — 5 — 10 — ns
tBA LB,UBAccessTime — 35 — 45 — 55 ns
tHzB LB,UBtoHigh-ZOutput 0 15 0 15 0 20 ns
tLzB LB,UBtoLow-ZOutput 0 — 0 — 0 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4to
Vdd-0.2V/Vdd-0.3VandoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
8 Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
DATA VALID
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
DOUT
ADDRESS
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (AddressControlled)(CS1=OE=ViL, Cs2=WE=ViH, UB orLB = ViL)
tRC
tOHA
tAA
tDOE
tLZOE
tACE1/tACE2
tLZCE1/
tLZCE2
tHZOE
HIGH-Z DATA VALID
tHZCS1/
tHZCS2
ADDRESS
OE
CS1
CS2
DOUT
LB
,
UB
tHZB
tBA
tLZB
AC WAVEFORMS
READ CYCLE NO. 2(1,3)(CS1, CS2, OE,ANDUB/LB Controlled)
Notes:
1. WEisHIGHforaReadCycle.
2. Thedeviceiscontinuouslyselected.OE,CS1,UB,orLB=ViL. Cs2=WE=ViH.
3. AddressisvalidpriortoorcoincidentwithCS1LOWtransition.
Integrated Silicon Solution, Inc. — www.issi.com9
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2)(OverOperatingRange)
35 ns 45 ns 55 ns
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
tWC WriteCycleTime 45 — 45 — 55 — ns
tsCs1/tsCs2 CS1/CS2toWriteEnd 35 — 35 — 45 — ns
tAW AddressSetupTimetoWriteEnd 35 — 35 — 45 — ns
tHA AddressHoldfromWriteEnd 0 — 0 — 0 — ns
tsA AddressSetupTime 0 — 0 — 0 — ns
tPWB LB,UBValidtoEndofWrite 35 — 35 — 45 — ns
tPWe WEPulseWidth 35 — 35 — 40 — ns
tsd DataSetuptoWriteEnd 20 — 20 — 25 — ns
tHd DataHoldfromWriteEnd 0 — 0 — 0 — ns
tHzWe(3) WELOWtoHigh-ZOutput — 20 — 20 — 20 ns
tLzWe(3) WEHIGHtoLow-ZOutput 5 — 5 — 5 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4Vto
Vdd-0.2V/Vdd-0.3VandoutputloadingspeciedinFigure1.
2.
TheinternalwritetimeisdenedbytheoverlapofCS1LOW,CS2HIGHandUBorLB,andWELOW.AllsignalsmustbeinvalidstatestoinitiateaWrite,but
anyonecangoinactiveto
terminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatesthe
write.
3. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
Notes:
1. WRITEisaninternallygeneratedsignalassertedduringanoverlapoftheLOWstatesontheCS1,CS2andWEinputsandat
leastoneoftheLBandUBinputsbeingintheLOWstate.
2. WRITE=(CS1)[(LB)=(UB)](WE).
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CS1Controlled,OE=HIGHorLOW)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
CS2
WE
DOUT
DIN
LB, UB
t
PWB
10 Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
WRITE CYCLE NO. 2 (WEControlled:OEisHIGHDuringWriteCycle)
WRITE CYCLE NO. 3 (WEControlled:OEisLOWDuringWriteCycle)
Integrated Silicon Solution, Inc. — www.issi.com 11
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
WRITE CYCLE NO. 4 (UB/LBControlled)
DATA UNDEFINED
t
WC
ADDRESS 1 ADDRESS 2
t
WC
HIGH-Z
t
PBW
WORD 1
LOW
WORD 2
t
HD
t
SA
t
HZWE
ADDRESS
CS1
UB, LB
WE
DOUT
DIN
OE
DATA
IN
VALID
t
LZWE
t
SD
t
PBW
DATA
IN
VALID
t
SD
t
HD
t
SA
t
HA
t
HA
HIGH
CS2
12 Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Min. typ.(1) Max. Unit
VdrVddforDataRetention SeeDataRetentionWaveform 1.2 3.6 V
idr DataRetentionCurrent Vdd=1.2V,CS1 ≥Vdd–0.2V Com. — 0.4 2 µA
Ind. 4
Auto. 18
tsdr DataRetentionSetupTime SeeDataRetentionWaveform 0 — ns
trdr RecoveryTime SeeDataRetentionWaveform trC — ns
Note:1.TypicalvaluesaremeasuredatVdd=3.0V,TA=25oCandnot100%tested.
DATA RETENTION WAVEFORM (CS1 Controlled)
DATA RETENTION WAVEFORM (CS2 Controlled)
V
DD
CS1 ≥ V
DD -
0.2V
t
SDR
t
RDR
V
DR
CS1
GND
Data Retention Mode
V
DD
CS2 ≤ 0.2V
t
SDR
t
RDR
V
DR
CS2
GND
Data Retention Mode
Integrated Silicon Solution, Inc. — www.issi.com 13
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
ORDERING INFORMATION
IS62WV6416DALL (1.65V - 2.2V)
Industrial Range: -40°C to +85°C
Speed (ns) Order Part No. Package
55 IS62WV6416DALL-55BLI miniBGA(6mmx8mm),Lead-free
 IS62WV6416DALL-55TLI TSOPTYPEII,Lead-free
IS62WV6416DBLL (2.3V-3.6V)
Industrial Range: -40°C to +85°C
Speed (ns) Order Part No. Package
45(35)1 IS62WV6416DBLL-45TI TSOPTYPEII
IS62WV6416DBLL-45TLI TSOPTYPEII,Lead-free
 IS62WV6416DBLL-45BI miniBGA(6mmx8mm)
IS62WV6416DBLL-45BLI miniBGA(6mmx8mm),Lead-free
IS62WV6416DBLL-45B2LI miniBGA(6mmx8mm),2CS,Lead-free
Note:
1.Speed=35nsforVdd=3.3V±5%.Speed=45nsforVdd=2.3V-3.6V
IS65WV6416DBLL (2.3V-3.6V)
Automotive Range: -40°C to +125°C
Speed (ns) Order Part No. Package
45 IS65WV6416DBLL-45CTLA3 TSOPTYPEII,Lead-free,CopperLead-frame
IS65WV6416DBLL-45BLA3 miniBGA(6mmx8mm),Lead-free
14 Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
2. Reference document : JEDEC MO-207
1. CONTROLLING DIMENSION : MM .
NOTE :
08/12/2008
Package Outline
Integrated Silicon Solution, Inc. — www.issi.com 15
Rev. B
12/18/12
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
2. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION.
1. CONTROLLING DIMENSION : MM
NOTE :
Θ
Θ
06/04/2008
Package Outline