02/2011
AWT6625
HELP4TM UMTS850 (Band 5)
CDMA/WCDMA 28.3 dBm Linear PAM
DATA SHEET - Rev 2.3
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
• Mixed-Mode (HSPA, EV-DO Compliant)
• 4th Generation HELPTM technology
• HighEfciency(R99):
•39%@POUT = +28.3 dBm
•26%@POUT = +17 dBm
•16%@POUT = +13.5 dBm
•16%@POUT = +7 dBm
•9%@POUT = +3.5 dBm
• LowQuiescentCurrent:<3mA
• LowLeakageCurrentinShutdownMode:<5µA
• InternalVoltageRegulator
• Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT port.
• Optimized for a 50 Ω System
• 1.8V Control Logic
• RoHSCompliantPackage,260oC MSL-3
APPLICATIONS
• Band 5 (Cell) WCDMA/HSPA Wireless Devices
• Band Class 0 CDMA/EVDO Wireless Devices
•BandClass0EVDORev.BWirelessDevices
PRODUCT DESCRIPTION
TheAWT6625 HELP4TM PA is the 4th generation
HELPTM product for UMTS850 (Band 5) and Cell-band
CDMA/EVDO Wireless devices. This PA incorporates
ANADIGICS’ HELP4TM technology to deliver
exceptional efciency at low power levels and low
quiescent current without the need for external voltage
regulators or converters. The device is manufactured
using advanced InGaP-PlusTM HBT technology
offering state-of-the-art reliability, temperature stability,
and ruggedness. Three selectable bias modes that
optimizeefciencyfordifferentoutputpowerlevelsand
a shutdown mode with low leakage current increase
handset talk and standby time. A “daisy chainable”
directional coupler is integrated in the module thus
eliminating the need of an external coupler. The
self-contained 3 mm x 3 mm x 1 mm surface mount
package incorporates matching networks optimized for
outputpower,efciency,andlinearityina50Ω system.
1
2
3
4
5
10
9
8
7
6
V
BATT
RF
IN
V
MODE2
V
MODE1
V
EN
CPL
OU
GND
CPL
IN
RF
OUT
V
CC
Bias Control
VoltageRegulation
CPL
GND at Slug (pad)