AWT6625 HELP4 UMTS850 (Band 5) CDMA/WCDMA 28.3 dBm Linear PAM TM DATA SHEET - Rev 2.3 FEATURES * Mixed-Mode (HSPA, EV-DO Compliant) * 4th Generation HELPTM technology * High Efficiency (R99): AWT6625 * 39 % @ POUT = +28.3 dBm * 26 % @ POUT = +17 dBm * 16 % @ POUT = +13.5 dBm * 16 % @ POUT = +7 dBm * 9 % @ POUT = +3.5 dBm * Low Quiescent Current: <3 mA * Low Leakage Current in Shutdown Mode: <5 A * Internal Voltage Regulator * Integrated "daisy chainable" directional coupler with CPLIN and CPLOUT port. * Optimized for a 50 System * 1.8V Control Logic * RoHS Compliant Package, 260 oC MSL-3 M45 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module APPLICATIONS * Band 5 (Cell) WCDMA/HSPA Wireless Devices * Band Class 0 CDMA/EVDO Wireless Devices * Band Class 0 EVDO Rev. B Wireless Devices PRODUCT DESCRIPTION The AWT6625 HELP4TM PA is the 4th generation HELPTM product for UMTS850 (Band 5) and Cell-band CDMA/EVDO Wireless devices. This PA incorporates ANADIGICS' HELP4 TM technology to deliver exceptional efficiency at low power levels and low quiescent current without the need for external voltage regulators or converters. The device is manufactured using advanced InGaP-Plus TM HBT technology offering state-of-the-art reliability, temperature stability, and ruggedness. Three selectable bias modes that optimize efficiency for different output power levels and a shutdown mode with low leakage current increase handset talk and standby time. A "daisy chainable" directional coupler is integrated in the module thus eliminating the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 system. GND at Slug (pad) VBATT 1 RFIN 2 VMODE2 3 VMODE1 VEN 10 VCC 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL Bias Control Voltage Regulation Figure 1: Block Diagram 02/2011 AWT6625 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 VMODE2 Mode Control Voltage 2 4 VMODE1 Mode Control Voltage 1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC PA Enable Voltage Coupler Output Supply Voltage DATA SHEET - Rev 2.3 02/2011 VCC AWT6625 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Battery Voltage (VBATT) 0 +6 V Control Voltages (VMODE1, VMODE2, VEN) 0 +3.5 V RF Input Power (PIN) - +10 dBm -40 +150 C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 824 - 849 MHz Supply Voltage (VCC) +3.2 +3.4 +4.2 V POUT < +28.3 dBm Enable Voltage (VEN) +1.35 0 +1.8 - +3.1 +0.5 V PA "on" PA "shut down" Mode Control Voltage (VMODE1,VMODE2) +1.35 0 +1.8 - +3.1 +0.5 V Low Bias Mode High Bias Mode 27.8(1) 26.8(1) - 28.3 27.3 17 16 7 6 - dBm CDMA Output Power CDMA2000, HPM CDMA2000, MPM CDMA2000, LPM EVDO Rev. B, HPM 27(1) - 27.5 16 6 18 - Case Temperature (TC) -30 - +90 WCDMA Output Power R99, HPM HSPA (MPR=0), HPM R99, MPM HSPA (MPR=0), MPM R99, LPM HSPA (MPR=0), LPM dBm COMMENTS 3GPP TS 34.121-1, Rel 8 Table C.11.1.3, SUBTEST 1 CDMA 2000, RC1 3GPP2 C.S0033-BV 1.0 5X Waveform C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Note: (1) For operation at 3.2 V, POUT is derated by 0.5 dB. DATA SHEET - Rev 2.3 02/2011 3 AWT6625 Table 4: Electrical Specifications - WCDMA Operation (R99 Modulation) (TC = +25 C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +1.8 V, 50 system) PARAMETER MIN TYP MAX UNIT Gain 24.5 15 10 27.5 18 13 30 22 16 ACLR1 at 5 MHz offset (1) - -42 -42 -40 ACLR2 at 10 MHz offset - POUT VMODE1 VMODE2 dB POUT = +28.3 dBm POUT = +17 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -37.5 -37.5 -36.5 dBc POUT = +28.3 dBm POUT = +17 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -57 -58 -60 -48 -48 -48 dBc POUT = +28.3 dBm POUT = +17 dBm POUT = +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V 36 22 12 - 39 26 16.5 16 9 - % POUT = +28.3 dBm POUT = +17 dBm POUT = +13.5 dBm POUT = +7 dBm POUT = +3.5 dBm 0V 1.8 V 1.8 V 1.8 V 1.8 V 0V 0V 0V 1.8 V 1.8 V Quiescent Current (Icq) Low Bias Mode - 2.8 4.5 mA 1.8 V 1.8 V Mode Control Current - 0.06 0.15 mA through VMODE pins, VMODE1,2 = +1.8 V Enable Current - 0.06 0.15 mA through VEN pin BATT Current - 0.8 1.5 mA through VBATT pin, VMODE1 = +1.8 V, VMODE2 = +1.8 V Leakage Current - <5 10 A VBATT = +4.2 V, VCC = +4.2 V, VEN = 0 V, VMODE = 0 V, VMODE1 = 0 V Noise in Receive Band - -134 -160 -132 - dBm/Hz Harmonics 2fo 3fo, 4fo - -43 -50 -35 -42 dBc Coupling Factor - 20 - dB Directivity - 20 - dB Coupler IN_OUT Daisy Chain Insertion Loss - 0.3 - dB 698 MHz to 2620 MHz Pin 8 - 6, Shutdown Mode Spurious Output Level (all spurious outputs) - - -70 dBc POUT < +28.3 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Power-Added Efficiency (1) Load mismatch stress with no permanent degradation or failure Notes: (1) ACLR and Efficiency measured at 836.5 MHz. 4 COMMENTS DATA SHEET - Rev 2.3 02/2011 through VCC pins 869 MHz to 894 MHz GPS BAND POUT < +28.3 dBm Applies over full operating range AWT6625 Table 5: Electrical Specifications - CDMA2000 Operation (RC-1 waveform) (TC = +25 C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 system) PARAMETER MIN TYP MAX UNIT Gain 24.5 15 10 27.5 18 13 30 22 16 Adjacent Channel Power at 885 kHz offset (1) Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -51 -51 -51 Adjacent Channel Power at 1.98 MHz offset (1) Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz 34 19 9 Power-Added Efficiency (1) Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure COMMENTS POUT VMODE1 VMODE2 dB POUT = +27.5 dBm POUT = +16 dBm POUT = +6 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -46.5 -46.5 -46.5 dBc POUT = +27.5 dBm POUT = +16 dBm POUT = +6 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -58 -59 <-60 -56 -56 -56 dBc POUT = +27.5 dBm POUT = +16 dBm POUT = +6 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V 37 23 13 - % POUT = +27.5 dBm POUT = +16 dBm POUT = +6 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V - - -70 8:1 - - dBc POUT +27.5 dBm In-band Load VSWR < 5:1 Out-of-band Load VSWR < 10:1 Applies over all operating conditions VSWR Applies over all operating conditions Notes: (1) ACLR and Efficiency measured at 836.5 MHz. Table 6: Electrical Specifications - EVDO Rev. B Operation (TC = +25 C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 system, [10001] or [10101] Waveform) PARAMETER Intermodulation IM3 MIN TYP MAX UNIT - -31 -13 dBm/300KHz DATA SHEET - Rev 2.3 02/2011 COMMENTS POUT VMODE1 VMODE2 +18 dBm 0V 0V 5 AWT6625 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com to the VMODE voltages. The Bias Control table below lists the recommended modes of operation for various applications. Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VEN, VMODE1 and VMODE2 voltages. Three operating modes are recommended to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At ~16dBm - 6 dBm, the PA should be "Mode Switched" to Medium Power Mode. For POUT levels < ~6 dBm, the PA can be switched to Low Power Mode for even lower quiescent current consumption. Bias Modes The power amplifier may be placed in either Low, Medium or High Bias modes by applying the appropriate logic level (see Operating Ranges table) Table 7: Bias Control APPLICATION POUT LEVELS BIAS MODE VEN VMODE1 VMODE2 VCC VBATT Low power (Low Bias Mode) < +6 dBm Low +1.8 V +1.8 V +1.8 V 3.2 - 4.2 V > 3.2 V Med power (Medium Bias Mode) > 6 dBm < +16 dBm Low +1.8 V +1.8 V 0V 3.2 - 4.2 V > 3.2 V High power (High Bias Mode) > +16 dBm High +1.8 V 0V 0V 3.2 - 4.2 V > 3.2 V - Shutdown 0V 0V 0V 3.2 - 4.2 V > 3.2 V Shutdown VBATT VCC C5 2.2 F C1 C9 0.01 F 100 pF 1 2 RFIN VMODE2 VMODE1 VEN C3 330 pF GND at slug VBATT VCC RFIN RFOUT 10 9 3 VMODE2 CPLIN 8 4 VMODE1 GND 7 5 VEN C7 100 pF CPLOUT 6 Figure 3: Evaluation Board Schematic 6 DATA SHEET - Rev 2.3 02/2011 C2 C4 0.01 F 2.2 F ceramic CPLIN C6 68 pF C8 100 pF RFOUT CPLOUT AWT6625 PERFORMANCE DATA PLOTS: (R99 waveform at 836.5 MHz and 50 V) Figure 4: WCDMA Gain(dB) (dB) over Temperature Figure 4: WCDMA Gain over Temperature (Vbatt=VCC=3.4V) (Vbatt = VCC = 3.4 V) Figure Figure 5: WCDMA Gain (dB) over Voltage 5: WCDMA Gain (dB) over Voltage ) (TC (Tc=25C = 25 8C) 35 30 -30C 3.4Vcc 30 25C 3.2Vcc 25C 3.4Vcc 25C 3.4Vcc 25 90C 3.4Vcc 25C 4.2Vcc 20 20 Gain (dB) Gain (dB) 25 15 10 10 5 5 0 0 5 10 15 20 25 0 30 0 Pout (dBm) 60 60 -30 3.4cc 25C 3.4Vcc 50 5 10 15 20 25 30 Pout (dBm) Figure 6: WCDMAPAE PAE (%) Temperature Figure 6: WCDMA (%)over over Temperature (Vbatt=VCC=3.4V) (Vbatt = VCC = 3.4 V) Figure 7: WCDMA PAE overover Voltage Figure 7: WCDMA PAE(%)(%) Voltage (Tc=25C) (TC = 25 8C) 25C 3.2Vcc 25C 3.4Vcc 50 90C 3.4Vcc Efficiency Efficiency (%) 15 40 30 25C 4.2Vcc 40 30 20 20 10 10 0 0 5 10 15 20 25 30 Pout (dBm) 0 0 5 10 15 20 25 30 Pout (dBm) Figure 8: Figure WCDMA ACLR1 (dBc) Temperature 8: WCDMA ACRL1 (dBc) overover Temperature (Vbatt=VCC=3.4V) (Vbatt = VCC = 3.4 V) -20 -20 -30C 3.4Vcc -25 25C 3.4Vcc 25C 3.2Vcc -25 90C 3.4Vcc ACLR1 (5MHz dBc) -30 ACLR1 (5MHz dBc) 9: WCDMAACLR1 ACLR1 (dBc) overover Voltage FigureFigure 9: WCDMA (dBc) Voltage (Tc=25C) (TC = 25 8C) -35 -40 -45 -50 25C 3.4Vcc 25C 4.2Vcc -30 -35 -40 -45 -50 -55 -55 -60 0 5 10 15 Pout (dBm) 20 25 30 -60 0 DATA SHEET - Rev 2.3 02/2011 5 10 15 Pout (dBm) 20 25 30 7 AWT6625 PACKAGE OUTLINE Figure 10: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code YY = Year WW= Work Week 6625R LLLLNN YYWWCC Part Number Lot Number Country Code(CC) Figure 11: Branding Specification - M45 Package 8 DATA SHEET - Rev 2.3 02/2011 AWT6625 COMPONENT PACKAGING Pin 1 Figure 12: Tape & Reel Packaging Table 8: Tape & Reel Dimensions PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA 3 mm x 3 mm x 1 mm 12 mm 4 mm 2500 7" DATA SHEET - Rev 2.3 02/2011 9 AWT6625 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION AWT6625RM45Q7 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module AWT6625RM45P9 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Partial Tape and Reel Surface Mount Module COMPONENT PACKAGING ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 10 DATA SHEET - Rev 2.3 02/2011